IEEE Journal of Solid-State Circuits

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Guest Editorial Introduction to the Special Section on the 2023 RFIC Symposium

Guest Editorial Introduction to the Special Section on the 2023 RFIC Symposium 150 150
Author(s): Kenichi Okada

Abstract:

This special section of the IEEE Journal of Solid-State Circuits presents the expanded versions of selected articles presented at the 2023 Radio Frequency Integrated Circuits Symposium (RFIC) held in San Diego, CA, USA, during June 11–13, 2023. The RFIC Symposium is the world’s premier conference focused on RF and millimeter-wave (mmWave) integrated …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1300 – 1300
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3379608
Publisher: IEEE

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A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch 150 150
Author(s): Sheng-Hsi Hung, Tz-Wun Wang, Si-Yi Li, Wei-Chien Hung, Ya-Ting Hsu, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Abstract:

This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal–insulator–metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current ( $I_{mathrm{CM}})$ to improve …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3386880
Publisher: IEEE

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A 28-nm 18.7 TOPS/mm $^2$ 89.4-to-234.6 TOPS/W 8b Single-Finger eDRAM Compute-in-Memory Macro With Bit-Wise Sparsity Aware and Kernel-Wise Weight Update/Refresh

A 28-nm 18.7 TOPS/mm $^2$ 89.4-to-234.6 TOPS/W 8b Single-Finger eDRAM Compute-in-Memory Macro With Bit-Wise Sparsity Aware and Kernel-Wise Weight Update/Refresh 150 150
Author(s): Yi Zhan, Wei-Han Yu, Ka-Fai Un, Rui P. Martins, Pui-In Mak

Abstract:

This article reports a high-density 3T1C single-finger (SF) embedded dynamic random access memory (eDRAM) compute-in-memory (CIM) macro. It features several techniques that enhance the memory density, the energy efficiency, and the throughput density, namely: 1) a high-density 3T1C SF-eDRAM cell with low-leakage retention (LLR) to improve the memory density …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3387995
Publisher: IEEE

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EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage

EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage 150 150
Author(s): Akash Levy, Luke R. Upton, Michael D. Scott, Dennis Rich, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Boris Murmann, Priyanka Raina

Abstract:

Designing compact and energy-efficient resistive RAM (RRAM) macros is challenging due to: 1) large read/write circuits that decrease storage density; 2) low-conductance cells that increase read latency; and 3) the pronounced effects of routing parasitics on high-conductance cell read energy. Multiple-bits-per-cell RRAM can boost storage density but has further challenges resulting from …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3387566
Publisher: IEEE

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A Ten-Level Series-Capacitor 24-to-1-V DC–DC Converter With Fast In Situ Efficiency Tracking, Power-FET Code Roaming, and Switch Node Power Rail

A Ten-Level Series-Capacitor 24-to-1-V DC–DC Converter With Fast In Situ Efficiency Tracking, Power-FET Code Roaming, and Switch Node Power Rail 150 150
Author(s): Zhaoqing Wang, Mao Li, Suhwan Kim, Nachiket Desai, Ram K. Krishnamurthy, Xin Zhang, Mingoo Seok

Abstract:

This work presents a high-efficiency ten-level series-capacitor 24-to-1-V buck converter with three techniques to improve its efficiency and reliability. First, we propose a fast in situ efficiency tracking (FIT) technique to maximize efficiency across load conditions and process, voltage, and temperature (PVT) variations. The second technique is the power-FET …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3385662
Publisher: IEEE

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A 2 $\times$ 56 Gb/s 0.78-pJ/b PAM-4 Crosstalk Cancellation Receiver With Active Crosstalk Extraction Technique in 28-nm CMOS

A 2 $\times$ 56 Gb/s 0.78-pJ/b PAM-4 Crosstalk Cancellation Receiver With Active Crosstalk Extraction Technique in 28-nm CMOS 150 150
Author(s): Liping Zhong, Hongzhi Wu, Weitao Wu, Catherine Wang, Wenbo Xiao, Xiongshi Luo, Yangyi Zhang, Dongfan Xu, Wei Wang, Taiyang Fan, Zhenghao Li, Xuxu Cheng, Quan Pan

Abstract:

A 2 $times$ 56 Gb/s 0.78-pJ/b four pulse-amplitude modulation (PAM-4) single-ended multiple-input multiple-output (MIMO) crosstalk cancellation and signal reutilization (XTCR) receiver (RX) is investigated for medium-reach (MR) backplane communications. An XTCR scheme based on active crosstalk extraction (A-XTCR) is proposed to improve the signal reutilization efficiency of the RX. By …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3387355
Publisher: IEEE

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A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression

A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression 150 150
Author(s): Zhaobo Zhang, Chenchang Zhan, Shuangxing Zhao, Man-Kay Law

Abstract:

This article presents a multi-antenna RF energy harvester (MARFEH) with leakage suppression to achieve high output power and avoid the effects of interference and blind spots in the room, and all the RF rectifiers share only one buffering capacitor to achieve low cost. The proposed leakage-suppressed rectifier utilizing adaptive $V_{…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3387025
Publisher: IEEE

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A 3 THz CMOS Image Sensor

A 3 THz CMOS Image Sensor 150 150
Author(s): Min Liu, Ziteng Cai, Zhe Wang, Shaohua Zhou, Man-Kay Law, Jian Liu, Jianguo Ma, Nanjian Wu, Liyuan Liu

Abstract:

This article presents a 3 THz CMOS image sensor (Tera-CIS). The sensor has a column-parallel readout (CPRO) architecture that integrates an antenna-coupled pixel array and CPRO circuit chains on a monolithic chip. The proposed compact two-transistor (2T) pixel adopts a step-covered patch antenna and a defected ground structure (DGS) to obtain …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3381595
Publisher: IEEE

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Monolithic Electronic–Biophotonic System-on-Chip for Label-Free Real-Time Molecular Sensing

Monolithic Electronic–Biophotonic System-on-Chip for Label-Free Real-Time Molecular Sensing 150 150
Author(s): Christos Adamopoulos, Hyeong-Seok Oh, Sidney Buchbinder, Panagiotis Zarkos, Pavan Bhargava, Asmaysinh Gharia, Ali M. Niknejad, Mekhail Anwar, Vladimir Stojanović

Abstract:

Label-free miniaturized optical sensors can have a tremendous impact on highly sensitive and scalable point-of-care (PoC) diagnostics by monitoring real-time molecular interactions without any labels. However, current biophotonic platforms are limited by complex optical and external readout equipment, precluding their use in a PoC setting. In this work, we address …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3382933
Publisher: IEEE

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