IEEE Journal of Solid-State Circuits

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A 3.7 μW 93.5 dB-SNDR PPD-Based Noise-Shaping SAR ADC With Split-Capacitor Stacking

A 3.7 μW 93.5 dB-SNDR PPD-Based Noise-Shaping SAR ADC With Split-Capacitor Stacking 150 150
Author(s): Ruiwen Liu, Yuhua Liang, Pengkai Rui, Yuxi Zhu, Yanbo Zhang, Zhong Tang, Zhangming Zhu

Abstract:

This article presents a pseudo-pseudo-differential (PPD) noise-shaping (NS) successive-approximation-register (SAR) analog-to-digital converter (ADC). A PPD-based split-capacitor stacking scheme is introduced to enable accurate passive summation. Compared to the conventional capacitor stacking scheme, the proposed scheme reduces the noise transfer function (NTF) sensitivity to parasitic capacitors. Combined with a third-order recycling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3704545
Publisher: IEEE

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A Subminiature Light-Load Efficient Integrated DC–DC Converter Featuring High Inductance Density Bond-Wire Inductor and Low Quiescent Current PFM Controller

A Subminiature Light-Load Efficient Integrated DC–DC Converter Featuring High Inductance Density Bond-Wire Inductor and Low Quiescent Current PFM Controller 150 150
Author(s): Sun-Yang Tay, Victor Adrian, Joseph S. Chang

Abstract:

Integrated DC–DC converters, for the sake of small form factor, typically employ small-valued passives to facilitate on-chip or in-package integration. The crucial attributes of these converters for next-generation subminiature Internet of Things include low cost, small form factor, and high power efficiency. Achieving all of these attributes remains a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3703599
Publisher: IEEE

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A Nonvolatile AI-Edge Processor With Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute Macro Using Dynamic Floating-/Fixed-Point Accumulation

A Nonvolatile AI-Edge Processor With Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute Macro Using Dynamic Floating-/Fixed-Point Accumulation 150 150
Author(s): De-Qi You, Win-San Khwa, Bo Zhang, Jui-Jen Wu, Chuan-Jia Jhang, Guan-Yi Lin, Po-Jung Chen, Ting-Chien Chiu, Fang-Yi Chen, Andrew Lee, Yu-Cheng Hung, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang

Abstract:

Nonvolatile AI-edge processors based on near-memory-compute (nvNMC) enable energy-efficient multiply-and-accumulate (MAC) operations with short wakeup latency for edge inference operations. Lossless compression is required for floating-point (FP) neural network (NN) models under on-chip memory capacity constraints; however, this imposes several challenges: 1) data decompression overhead due to lossless FP weight encoding; 2) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3705432
Publisher: IEEE

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A −248-dB FOMref CS-Fusion PLL Architecture Combining the Advantages of PFD-CP PLLs and Sampling PLLs in a Single Loop

A −248-dB FOMref CS-Fusion PLL Architecture Combining the Advantages of PFD-CP PLLs and Sampling PLLs in a Single Loop 150 150
Author(s): Junyuan Su, Yuxuan Hu, Zherui Zhang, Lei Wang, Yuncai Zhuang, Fei Song, Jiayoon Ru

Abstract:

This article introduces a CP-sampling (CS)-fusion PLL architecture that combines the advantages of PFD-CP PLLs (robust and speedy locking) and sampling PLLs (low jitter/power) in a single loop. The PFD sends pulsewidth-modulation (PWM) pulses to a merged $mathbf {G_{m}}$ /CP (GCP) block so that the phase error …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 20
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3704989
Publisher: IEEE

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A Self-Injection LC Oscillator for Flicker Noise Reduction

A Self-Injection LC Oscillator for Flicker Noise Reduction 150 150
Author(s): Bahram Jafari, Ali Ghafari, Sankaran Aniruddhan, Shahriar Mirabbasi, Sudip Shekhar

Abstract:

Self-injection has been used in lasers and photonic integrated circuits to reduce the laser’s phase noise (PN). We show that self-injection can be leveraged in GHz LC oscillators as well. Our oscillator employs a current-domain self-injection technique by leveraging second-harmonic extraction, capacitive phase shifting, and self-mixing through the oscillator’…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 816 – 829
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643322
Publisher: IEEE

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Modern Wireline Transceivers

Modern Wireline Transceivers 150 150
Author(s): Tony Chan Carusone, Timothy O. Dickson, Samuel Palermo, Sudip Shekhar, Mozhgan Mansuri

Abstract:

Over the past two decades, ever-increasing network bandwidth (BW) demands in data centers and high-performance computing systems have fueled exponential growth in per-lane serial link data rates. To keep up with this demand and enable faster communication over BW-limited electrical channels, wireline transceiver architectures and circuit topologies have rapidly evolved …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 395 – 422
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3642231
Publisher: IEEE

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A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation 150 150
Author(s): Feifan Hong, Jiawen Chen, Pingda Guan, Sayan Kumar, Robert Bogdan Staszewski, Teerachot Siriburanon

Abstract:

In this article, we present a differentially injection-locked clock multiplier (ILCM) featuring an ultra-wide frequency tuning range (TR) and low jitter, achieved through a compact folded-inductor-based magnetic-flux cancellation technique. A co-designed series-LC dual-mode quadrature ring oscillator (QRO) and edge-combining frequency doubler operating in the mm-wave band jointly extend the TR …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1410 – 1424
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3640957
Publisher: IEEE

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150
Author(s): Runzhou Chen, Hao-Yu Chien, Boxun Yan, Chao-Jen Tien, Mau-Chung Frank Chang

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1776 – 1790
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644224
Publisher: IEEE

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A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery

A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery 150 150
Author(s): Arindam Mandal, Chi-Hsiang Huang, Julian Arenas, Wei-En Lee, Kevin D. Patino-Sosa, Philip Anschutz, Amanda Jacob, Keshav Ramachandra, Samuel Sober, Muhannad S. Bakir, Shaolan Li, Visvesh S. Sathe

Abstract:

This article presents a 32-channel time-multiplexed highly digital neural recording front-end (RFE) that exhibits sub- $8.8~\mu $ s recovery latency from large stimulation artifacts while delivering high-resolution data at the Nyquist rate. The RFE is time-shared across 32 channels for low-frequency electrocorticography (ECoG) recording and across four channels for high-frequency action potentials (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1053 – 1067
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643367
Publisher: IEEE

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