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A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch
A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch 150 150
Author(s): Sheng-Hsi Hung, Tz-Wun Wang, Si-Yi Li, Wei-Chien Hung, Ya-Ting Hsu, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Abstract:

This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal–insulator–metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current ( $I_{mathrm{CM}})$ to improve …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3386880
Publisher: IEEE

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EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage
EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage 150 150
Author(s): Akash Levy, Luke R. Upton, Michael D. Scott, Dennis Rich, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Boris Murmann, Priyanka Raina

Abstract:

Designing compact and energy-efficient resistive RAM (RRAM) macros is challenging due to: 1) large read/write circuits that decrease storage density; 2) low-conductance cells that increase read latency; and 3) the pronounced effects of routing parasitics on high-conductance cell read energy. Multiple-bits-per-cell RRAM can boost storage density but has further challenges resulting from …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3387566
Publisher: IEEE

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A Ten-Level Series-Capacitor 24-to-1-V DC–DC Converter With Fast In Situ Efficiency Tracking, Power-FET Code Roaming, and Switch Node Power Rail
A Ten-Level Series-Capacitor 24-to-1-V DC–DC Converter With Fast In Situ Efficiency Tracking, Power-FET Code Roaming, and Switch Node Power Rail 150 150
Author(s): Zhaoqing Wang, Mao Li, Suhwan Kim, Nachiket Desai, Ram K. Krishnamurthy, Xin Zhang, Mingoo Seok

Abstract:

This work presents a high-efficiency ten-level series-capacitor 24-to-1-V buck converter with three techniques to improve its efficiency and reliability. First, we propose a fast in situ efficiency tracking (FIT) technique to maximize efficiency across load conditions and process, voltage, and temperature (PVT) variations. The second technique is the power-FET …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3385662
Publisher: IEEE

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A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression
A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression 150 150
Author(s): Zhaobo Zhang, Chenchang Zhan, Shuangxing Zhao, Man-Kay Law

Abstract:

This article presents a multi-antenna RF energy harvester (MARFEH) with leakage suppression to achieve high output power and avoid the effects of interference and blind spots in the room, and all the RF rectifiers share only one buffering capacitor to achieve low cost. The proposed leakage-suppressed rectifier utilizing adaptive $V_{…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3387025
Publisher: IEEE

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A 24 to 30-GHz Phased Array Transceiver Front End With 2.8 to 3.1-dB RX NF and 22 to 24% TX Peak Efficiency
A 24 to 30-GHz Phased Array Transceiver Front End With 2.8 to 3.1-dB RX NF and 22 to 24% TX Peak Efficiency 150 150
Author(s): Wooram Lee, Caglar Ozdag, Jean-Olivier Plouchart, Alberto Valdes-Garcia, Bodhisatwa Sadhu

Abstract:

This article presents a compact 24–30-GHz phased array transceiver (TRX) front end (FE) with high transmitter (TX) power efficiency and low receiver (RX) noise figure (NF) in a 130-nm bipolar CMOS (BiCMOS) technology supporting different 5th generation mobile network (5G) frequency range 2 (FR2) bands (n257, n258, and n261). We introduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3380649
Publisher: IEEE

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Design and Stability Analysis of the Variable-Sawtooth-Based PWM Controller for the AC-Coupled Envelope Tracking Supply Modulator
Design and Stability Analysis of the Variable-Sawtooth-Based PWM Controller for the AC-Coupled Envelope Tracking Supply Modulator 150 150
Author(s): Peng Xu, Tao Wang, Xueli Zhang, Peng Cao, Jiawei Xu, Zhiliang Hong

Abstract:

This letter analyzes the proposed variable-sawtooth-based PWM controller for the ac-coupled envelope tracking (ET) supply modulator (SM). The ET SM includes a linear amplifier and a switching power modulator (SPM). The SPM maintains the voltage across the ac-coupling capacitor and provides an output current in a power-efficient manner. A 10-MHz …

Published in: IEEE Solid-State Circuits Letters
Page(s): 151 – 154
Year of Publication: 2024
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3384345
Publisher: IEEE

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A 2.8 $\mu$ s Response Time 95.1% Efficiency Hybrid Boost Converter With RHP Zero Elimination for Fast-Transient Applications
A 2.8 $\mu$ s Response Time 95.1% Efficiency Hybrid Boost Converter With RHP Zero Elimination for Fast-Transient Applications 150 150
Author(s): Junyi Ruan, Junmin Jiang, Chenzhou Ding, Yunxiao Li, Yanhui Wu, Ka Nang Leung, Xun Liu

Abstract:

This article proposes a hybrid boost converter that eliminates the right-half-plane (RHP) zero. The proposed converter can be designed with a broad bandwidth up to a tenth of the switching frequency, such that the converter can attain fast transient response as a buck converter. Besides, it features a left-half-plane zero …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3376251
Publisher: IEEE

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A Single-Ended Impedance-Matched Transmitter With Single Ring-Oscillator-Based Time-Domain ZQ Calibration for Memory Interfaces
A Single-Ended Impedance-Matched Transmitter With Single Ring-Oscillator-Based Time-Domain ZQ Calibration for Memory Interfaces 150 150
Author(s): Jaekwang Yun, Sangyoon Lee, Jaewook Kim, Joo-Hyung Chae, Suhwan Kim, Yong-Un Jeong

Abstract:

The proposed single-ended transmitter for memory interfaces is an impedance-matched transmitter that utilizes a single ring-oscillator-based time-domain ZQ calibration. This ZQ calibration technique eliminates the offsets by using a gain-controlled ring oscillator with late-case forcing, resulting in low maximum/average error rates. The transmitter incorporates a phase equalization method to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3375858
Publisher: IEEE

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A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array
A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array 150 150
Author(s): Injune Yeo, Wangxin He, Yuan-Chun Luo, Shimeng Yu, Jae-Sun Seo

Abstract:

Analog computing-in-memory (CIM) using emerging resistive nonvolatile memory (NVM) technologies faces challenges, such as static power consumption, current flow-induced IR drop, and the need for multiple power-hungry ADCs. In this letter, we present ferroelectric capacitive array (FCA)-based energy/area-efficient CIM macro used for charge-domain multiply-and-accumulate operations, which addresses the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 70 – 73
Year of Publication: 2024
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3361011
Publisher: IEEE

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