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A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS

A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS 150 150
Author(s): Nayu Li, Ziyao Xiong, Botao Yang, Hang Lu, Yiwei Liu, Xiaokang Qi, Gaopeng Chen, Na Yan, Chunyi Song, Zhiwei Xu

Abstract:

This article presents a K/Ka-band transmit/receive (T/R) front-end for jointed sensing and communication (JSAC) applications. A reconfigurable matching network for both signal reception and transmission is realized using the proposed triple-coupled transformer (TCT) technique, achieving low power loss and a compact footprint. The T/R switch at …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667736
Publisher: IEEE

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A Dual-Band Simultaneous RF Energy Harvesting System With Globally Optimized 3-D MPPT and Efficiency Enhancement

A Dual-Band Simultaneous RF Energy Harvesting System With Globally Optimized 3-D MPPT and Efficiency Enhancement 150 150
Author(s): Xiaguang Li, Qing Miao, Shiheng Yang, Tianting Zhao, Sijun Du, Xiaoyang Zeng, Zhiyuan Chen

Abstract:

This article presents a globally optimized radio frequency (RF) energy harvesting system that leverages the novel concepts of 3-D maximum power point tracking (3-D MPPT) and collaborative source reconfiguration to achieve high MPPT accuracy and a wide input power range. The proposed 3-D MPPT coordinates the energy sources, optimizes the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3662153
Publisher: IEEE

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A 60-GHz Low-Noise mmWave Divider-Less Fractional-N Cascaded PLL Achieving −250.2-dB FoMJ in 28-nm CMOS

A 60-GHz Low-Noise mmWave Divider-Less Fractional-N Cascaded PLL Achieving −250.2-dB FoMJ in 28-nm CMOS 150 150
Author(s): Jaehong Jung, Eunseok Lee, Donghyeon Han, Jinchen Wang, Anantha P. Chandrakasan, Ruonan Han

Abstract:

This article presents a fractional- ${ {N}}$ cascaded phase-locked loop (PLL) operating in the mmWave band from 55.8 to 64.2 GHz. The cascaded architecture consists of a first-stage fractional- ${ {N}}$ reference-sampling (RS) PLL and a second-stage sub-sampling (SS) PLL, incorporating two key innovations. The first-stage RS-PLL leverages a fully differential voltage-domain quantization-noise cancellation (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3652928
Publisher: IEEE

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A 475-nW Area-Efficient Programmable Analog Feature Extraction Filterbank for Audio Classification

A 475-nW Area-Efficient Programmable Analog Feature Extraction Filterbank for Audio Classification 150 150
Author(s): Patrice Abbie D. Legaspi, Shubham Yadav, Mark S. Oude Alink, Bram Nauta

Abstract:

Audio classification in edge devices has many applications and can be implemented at varying levels of complexity, typically consisting of a feature extractor followed by a classifier. Such devices are often always-on, constantly listening to their surroundings, and have a small form factor; therefore, they require low-power operation and high …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3655426
Publisher: IEEE

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A Folded-Differential Switched-Capacitor SRAM CIM Macro With Scalable MAC Sizes for TinyML Inference

A Folded-Differential Switched-Capacitor SRAM CIM Macro With Scalable MAC Sizes for TinyML Inference 150 150
Author(s): Zhonghao Chen, Ling-An Cheong, Tianyi Yu, Yiming Chen, Guodong Yin, Teng Yi, Yongpan Liu, Huazhong Yang, Xueqing Li

Abstract:

This letter presents a switched-capacitor SRAM compute-in-memory macro optimized for TinyML inference. Key features include: 1) an area-efficient folded-differential multiply-and-accumulate (FD-MAC) scheme to double the signal margin; 2) a closed-loop floating-inverter amplifier (FIA)-based charge accumulation technique for signal-to-noise ratio enhancement and multiply-and-accumulate (MAC) voltage integration; and 3) a sparsity-aware multistep MAC method …

Published in: IEEE Solid-State Circuits Letters
Page(s): 73 – 76
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3662477
Publisher: IEEE

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0.13 K NETD D-Band CMOS Passive Imager With Noise Suppression Analysis

0.13 K NETD D-Band CMOS Passive Imager With Noise Suppression Analysis 150 150
Author(s): Zahra Mohseni, Sajjad Sabbaghi, Hai Yu, Peixin Han, Yuhao Yuan, Qun Jane Gu

Abstract:

This article presents a new system design and in-depth analysis of a wideband, low-power passive imaging receiver based on a Dicke-switch architecture, implemented in 28 nm CMOS technology. The proposed structure employs a three-coil gm-boosting technique for the low-noise amplifier (LNA). This approach reduces the LNA’s noise figure (NF) and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 830 – 846
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3646943
Publisher: IEEE

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A Low-Voltage-CMOS AC–DC Converter With Series-Capacitor Pre-Regulation and Fine-Grained Capacitance Reallocation for Mains-Powered IoT

A Low-Voltage-CMOS AC–DC Converter With Series-Capacitor Pre-Regulation and Fine-Grained Capacitance Reallocation for Mains-Powered IoT 150 150
Author(s): Jiahao Shi, Xuchu Mu, Qiaobo Ma, Yang Jiang, Rui P. Martins, Pui-In Mak

Abstract:

This article presents a power- and area-efficient switched-capacitor (SC) ac–dc converter in low-voltage (LV) CMOS for mains-powered Internet of Things (IoT) applications. The proposed converter adopts a single-stage series-capacitor architecture with fine-grained pre-rectification regulation, eliminating the need for intermediate high-voltage (HV) dc capacitors or HV dc–dc stages, thereby …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3650592
Publisher: IEEE

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Side-Channel Attack-Resistant HMAC-SHA256 Accelerator With Boolean and Arithmetic Masking in Intel 4 CMOS

Side-Channel Attack-Resistant HMAC-SHA256 Accelerator With Boolean and Arithmetic Masking in Intel 4 CMOS 150 150
Author(s): Sachin Taneja, Vikram B. Suresh, Raghavan Kumar, Vivek De, Sanu K. Mathew

Abstract:

This work describes a side-channel attack (SCA)-resistant hash-based message authentication code (HMAC) accelerator with secure hash algorithm 2 (SHA-2) using Boolean and arithmetic masking along with the first-reported ASIC implementation in Intel 4 CMOS with 10 M measured traces. Previously reported masked datapath suffers from high area/performance overheads (>100%) designs due to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1026 – 1036
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3647096
Publisher: IEEE

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A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue

A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue 150 150
Author(s): Alin Thomas Tharakan, Cong Huang, Yiheng Fu, Horacio Londoño Ramírez, Stéphanie P. Lacour, Mahsa Shoaran

Abstract:

This letter presents an 8-channel current-mode stimulator achieving a ±10.2 V voltage compliance in a standard CMOS process, supporting up to 4.5 mA stimulation current per channel. The proposed dynamic charge pump (DCP), which adaptively sizes its switches based on the stimulation current, helps achieve ~15% higher power efficiency at low currents compared …

Published in: IEEE Solid-State Circuits Letters
Page(s): 49 – 52
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3653014
Publisher: IEEE

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