Noise

  • No Comments

A 6.9-ppm/°C, 0.66-mV/V Line Regulation, 50-mA Multi-Loop Low-Dropout Regulator With Integrated Single-BJT Voltage and Current References

A 6.9-ppm/°C, 0.66-mV/V Line Regulation, 50-mA Multi-Loop Low-Dropout Regulator With Integrated Single-BJT Voltage and Current References 150 150
Author(s): Raghav Bansal, Shouri Chatterjee

Abstract:

This article presents a fully integrated output-capacitor-less (OCL) multi-feedback-loop low-dropout regulator (LDO) with an in-built single bipolar junction transistor (BJT)-based voltage and current reference (VCR) for energy-harvesting Internet of Things (IoT) devices. The proposed architecture comprises four loops, which significantly enhance the DC regulation and transient performance of the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3694415
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Cryogenic Superconducting Quantum Computing Unit Interface Chipset With Phase-Detection-Based Readout and Phase-Shifter-Based Controller

A Cryogenic Superconducting Quantum Computing Unit Interface Chipset With Phase-Detection-Based Readout and Phase-Shifter-Based Controller 150 150
Author(s): Yanshu Guo, Yaoyu Li, Wenqiang Huang, Tian Tian, Nan Wu, Siqi Zhang, Qichun Liu, Tiefu Li, Zhihua Wang, Ning Deng, Yuanjin Zheng, Hanjun Jiang

Abstract:

This article presents a cryogenic quantum interface chipset at 3.5 K for superconducting transmon qubit operations. The chipset comprises a phase-detection readout and a phase-shifter-based polar-modulation controller with flexible scalability. With the proposed phase-detection readout scheme, a 9-bit time-to-digital converter (TDC)-based state detector is used to read out the qubit …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 18
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3695612
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity

A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity 150 150
Author(s): Feng Cheng, Jianlin Xia, Encheng Zhu, Long Zhang, Zhongyuan Fang, Xiaofeng Sun, Dejin Wang, Shaoping Li, Jing Zhu, Yongjia Li, Weifeng Sun

Abstract:

This article proposes a hybrid magnetic current sensor achieving a 15-MHz bandwidth within a compact 2.7-mm2 area. To mitigate the pole–zero mismatch inherent in the two-stage integrator topology, a dual-output Gm-C integrator with subtractor-based compensation is proposed, achieving a ±0.8% local gain non-uniformity. A wideband feedforward ripple suppression scheme cancels …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3692476
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 77-dB DR Two-Stage SAR ADC for Low-Gain Analog Front-Ends Using Asynchronous Pipelining and RC Snubber Reference Stabilization

A 77-dB DR Two-Stage SAR ADC for Low-Gain Analog Front-Ends Using Asynchronous Pipelining and RC Snubber Reference Stabilization 150 150
Author(s): Jun Feng, Rares Bodnar, Roberto Maurino, Marcel J. M. Pelgrom, Filip Tavernier

Abstract:

The analog front-end (AFE) often bottlenecks the power of modern receiver chains, burdened by the large-signal linearity required before the ADC. This work introduces a 77-dB DR, 200-MS/s two-stage SAR ADC that can alleviate much of this burden by offering a significantly lower input-referred noise (IRN) to enable low-gain …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3686660
Publisher: IEEE

View on IEEE Xplore

  • No Comments

An Ultra-Low-Jitter Sampling-Filter-Based Charge-Pump PLL With Resistive-Discharge Time-Amplifying Phase-Frequency Detector and Series-Resonance VCO

An Ultra-Low-Jitter Sampling-Filter-Based Charge-Pump PLL With Resistive-Discharge Time-Amplifying Phase-Frequency Detector and Series-Resonance VCO 150 150
Author(s): Feng Bu, Depeng Sun, Dingtao Zeng, Yuan Gao, Bowen Wang, Zhicheng Dong, Xiaoteng Zhao, Hao Xu, Na Yan, Ruixue Ding, Shubin Liu, Zhangming Zhu

Abstract:

This article presents a 13-GHz quadrature charge-pump phase-locked loop (CPPLL) that simultaneously achieves ultra-low jitter and low-spur performance. First, a low-noise resistive-discharge time-amplifying phase-frequency detector (RD-TAPFD) is proposed, achieving extremely low inherent noise and significantly suppressing noise from the following stages. Second, a sampling-based dual-path loop filter effectively suppresses reference …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3690771
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier 150 150
Author(s): Yihang Cheng, Yihan Zhang, Huaqiang Wu, Sining Pan

Abstract:

This letter presents an energy-efficient dynamic amplifier. It utilizes source-coupled input boosting and time-domain differential sampling techniques to boost the effective input signal by $4\times $ compared to its floating inverter amplifier (FIA) prototype without noise or power penalties. With discharge-based dynamic biasing, the bandwidth (BW) and power of the amplifier …

Published in: IEEE Solid-State Circuits Letters
Page(s): 93 – 96
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668876
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Noise-Shaping SAR-Based ExG Sensing Frontend With Dynamic Input-Impedance Boosting and Prediction-Assisted Mismatch-Shaping DEM

A Noise-Shaping SAR-Based ExG Sensing Frontend With Dynamic Input-Impedance Boosting and Prediction-Assisted Mismatch-Shaping DEM 150 150
Author(s): Yiming Han, Linran Zhao, Yaoyao Jia

Abstract:

This article presents a noise-shaping successive approximation register (NS-SAR)-based direct-digitizing electrophysiological (ExG) sensing frontend (SFE) fabricated in a standard 180-nm CMOS process. To address the challenges of large motion artifacts and high electrode–tissue impedance (ETI), we propose three key innovations in our proposed SFE that enable accurate ExG …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3674986
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load

A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load 150 150
Author(s): Seung Hun Choi, Jun Yeol An, Jaewoong Ahn, Si-Woo Kim, Jae-Youl Lee, Yoon-Kyung Choi, Hyung-Min Lee

Abstract:

On-cell touch flexible organic light-emitting diode (OLED) displays face significant display noise (D-noise) challenges due to large parasitic capacitance ( $C_{P}$ ). To address the limitations of conventional methods, this article proposes improved common-current subtraction (CCS), incorporating common-voltage subtraction (CVS) and common-charge subtraction (CQS) techniques. CVS enhances signal-to-noise ratio (SNR) by …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3675678
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK 150 150
Author(s): Yingjie Li, Yifei Zhang, Haichuan Lin, Cheng Wang

Abstract:

Millions of quantum-bits (qubits) are envisioned for a fault-tolerant quantum computer. For scalability, silicon spin qubit stands out due to its compatibility with advanced CMOS processes. Silicon single-electron transistors (SETs) are widely adopted for the quantum state discrimination of spin qubits. For high-fidelity quantum logic gate and readout, the gate …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671795
Publisher: IEEE

View on IEEE Xplore

Search this website