Noise

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A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load

A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load 150 150
Author(s): Seung Hun Choi, Jun Yeol An, Jaewoong Ahn, Si-Woo Kim, Jae-Youl Lee, Yoon-Kyung Choi, Hyung-Min Lee

Abstract:

On-cell touch flexible organic light-emitting diode (OLED) displays face significant display noise (D-noise) challenges due to large parasitic capacitance ( $C_{P}$ ). To address the limitations of conventional methods, this article proposes improved common-current subtraction (CCS), incorporating common-voltage subtraction (CVS) and common-charge subtraction (CQS) techniques. CVS enhances signal-to-noise ratio (SNR) by …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3675678
Publisher: IEEE

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A Noise-Shaping SAR-Based ExG Sensing Frontend With Dynamic Input-Impedance Boosting and Prediction-Assisted Mismatch-Shaping DEM

A Noise-Shaping SAR-Based ExG Sensing Frontend With Dynamic Input-Impedance Boosting and Prediction-Assisted Mismatch-Shaping DEM 150 150
Author(s): Yiming Han, Linran Zhao, Yaoyao Jia

Abstract:

This article presents a noise-shaping successive approximation register (NS-SAR)-based direct-digitizing electrophysiological (ExG) sensing frontend (SFE) fabricated in a standard 180-nm CMOS process. To address the challenges of large motion artifacts and high electrode–tissue impedance (ETI), we propose three key innovations in our proposed SFE that enable accurate ExG …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3674986
Publisher: IEEE

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A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS

A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS 150 150
Author(s): Chenghao Zhang, Maliang Liu, Yuan Chang, Yihang Yang, Jinhai Xiao, Yintang Yang, Yong Chen

Abstract:

This article reports a 40-GS/s 8-bit time-interleaved (TI) time-domain (TD) gated-ring-oscillator analog-to-digital converter (GRO-ADC). An interleaving number of 32 is achieved with a single-channel 8-bit GRO-ADC operating at 1.25 GS/s, leading to a low front-end design complexity compared to recently published arts. The sampling front end employs a linearity-enhanced boosted …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671459
Publisher: IEEE

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Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK 150 150
Author(s): Yingjie Li, Yifei Zhang, Haichuan Lin, Cheng Wang

Abstract:

Millions of quantum-bits (qubits) are envisioned for a fault-tolerant quantum computer. For scalability, silicon spin qubit stands out due to its compatibility with advanced CMOS processes. Silicon single-electron transistors (SETs) are widely adopted for the quantum state discrimination of spin qubits. For high-fidelity quantum logic gate and readout, the gate …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671795
Publisher: IEEE

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A 23.4–42.1-GHz Fractional-N Synthesizer With ADC-Based Direct Phase Digitization

A 23.4–42.1-GHz Fractional-N Synthesizer With ADC-Based Direct Phase Digitization 150 150
Author(s): Hao Xu, Yizhuo Wang, Ziyang Jiao, Guoyu Li, Yiyun Mao, Shuai Liu, Yan Liu, Jimiao Sang, Qi Guo, Long Kong, Na Yan

Abstract:

A fractional-N digital phase-locked loop employs a novel analog-to-digital converter (ADC)-based phase detector (PD) to achieve direct phase digitization, thereby eliminating the need for a digital-to-time converter (DTC). The high PD gain reduces in-band phase noise, while its high linearity enables all-digital $\Sigma \Delta $ quantization noise cancellation. Implemented with …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671094
Publisher: IEEE

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A 12-bit 1-GS/s Current-Steering DAC With Paired Current Source Switching Background Mismatch Calibration

A 12-bit 1-GS/s Current-Steering DAC With Paired Current Source Switching Background Mismatch Calibration 150 150
Author(s): Chang-Un Park, Jae-Hyun Chung, Chunsuk Kim, Hyun-Woo Shin, Charlie Tahar, Seung-Tak Ryu

Abstract:

This article presents a spur-suppressed background calibration technique for high-speed current-steering digital-to-analog converters (DACs), based on a paired current source (CS) switching scheme. In conventional background calibration, periodic switching of CSs to and from the calibration mode introduces unwanted glitches that appear as spurious tones. The proposed technique introduces an …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3668788
Publisher: IEEE

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Design and analysis of a three-stream STT-MTJ TRNG with XOR and Majority Voter logic as post processing Architectures

Design and analysis of a three-stream STT-MTJ TRNG with XOR and Majority Voter logic as post processing Architectures 150 150
Author(s): M.Satwik Rai, Akshaja Kanugovi, Vinod Kumar Joshi

Abstract:

True Random Number Generators (TRNGs) are critical for hardware security, providing unpredictable entropy for cryptographic applications. Spin-Transfer Torque Magnetic Tunnel Junction (STT-MTJ) devices offer a promising entropy source due to their low power consumption, non-volatility, and stochastic switching behavior. This work presents a MTJ-based TRNG which produces three independent bit …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3671608
Publisher: IEEE

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A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications

A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications 150 150
Author(s): Min-Woong Seo, Yong-Suk Choi, Sanggwon Lee, Yeongseok Shim, Gihwan Cho, Daehee Bae, Masamichi Ito, Jaehun Jeong, Hiroyuki Sugihara, Si-Gyoung Koo, Sung-Jae Byun, Hyukbin Kwon, Youna Lee, Bumjun Kim, Su-Hyun Han, Suksan Kim, Wonoh Ryu, Kwan-Sik Kim, Yongjun Kim, Seung-Sik Kim, Junghoon Jung, Sun-Young Yoo, Jinkyeong Heo, Seung-Chul Shin, Heesung Shim, Jae-Kyu Lee, Jonghyun Go, Jaihyuk Song

Abstract:

This article presents a 3-Mpixel (Mp) three-stacked digital pixel sensor (DPS) featuring the world’s smallest pixel pitch of $2.988~\mu $ m, achieving a low temporal random noise (RN) of 1.16 e-rms and a high dynamic range (HDR) of 123 dB in global-shutter (GS) operation mode for versatile applications. To realize both the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1319 – 1332
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663214
Publisher: IEEE

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A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier 150 150
Author(s): Yihang Cheng, Yihan Zhang, Huaqiang Wu, Sining Pan

Abstract:

This letter presents an energy-efficient dynamic amplifier. It utilizes source-coupled input boosting and time-domain differential sampling techniques to boost the effective input signal by $4\times $ compared to its floating inverter amplifier (FIA) prototype without noise or power penalties. With discharge-based dynamic biasing, the bandwidth (BW) and power of the amplifier …

Published in: IEEE Solid-State Circuits Letters
Page(s): 93 – 96
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668876
Publisher: IEEE

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