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A 48-Gb/s Inductorless PAM-4 Optical Receiver With 1.28-pJ/bit Efficiency in 28-nm CMOS

A 48-Gb/s Inductorless PAM-4 Optical Receiver With 1.28-pJ/bit Efficiency in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, Quan Pan, Xianbo Li, C. Patrick Yue

Abstract:

This work presents a 48-Gb/s four-level pulse amplitude modulation (PAM-4) optical receiver (ORX) with a linear analog front-end (AFE) and an integrated sampler. The AFE employs a transadmittance-stage transimpedance-stage (TAS-TIS) topology, replacing conventional CML-based variable gain amplifiers (VGAs) and post-amplifiers, avoiding continuous-time linear equalizers and passive inductors while preserving …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3607107
Publisher: IEEE

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A 38.1 fJ/Bit Capacitive-Latch True Random Number Generator Featuring Both Autozeroed Inverter Mismatch and Accelerated Evaluation

A 38.1 fJ/Bit Capacitive-Latch True Random Number Generator Featuring Both Autozeroed Inverter Mismatch and Accelerated Evaluation 150 150
Author(s): Woojin Lee, Changmin Sim, Changjoo Kim, Jinwoo Jeon, Hyundo Jung, Taihyun Kim, Chulwoo Kim

Abstract:

This work presents a capacitive-latch (C-latch) true random number generator (TRNG) that achieves both inverter mismatch autozeroing and accelerated evaluation by utilizing coupling capacitors. The proposed C-latch TRNG samples the mismatch between inverter equalization voltages through coupling capacitors during the equalization phase, effectively autozeroing inverter mismatch and enabling high-entropy raw …

Published in: IEEE Solid-State Circuits Letters
Page(s): 265 – 268
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608187
Publisher: IEEE

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A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation

A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation 150 150
Author(s): Jhuang-Wei Cyue, Tai-Haur Kuo

Abstract:

This article presents a digital-input class-D audio amplifier (CDA) that employs a double-sided voltage-boosting (DSVB) modulation scheme, integrating a capacitively coupled chopper amplifier (CCCA) with a single-inductor buck–boost power stage. The CCCA achieves a high dynamic range (DR) due to its very low noise floor and is implemented with …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602261
Publisher: IEEE

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A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, C. Patrick Yue

Abstract:

This letter presents a 0.32 pJ/bit 100-Gb/s PAM-4 CMOS transimpedance amplifier (TIA). Several techniques are proposed to alleviate TIA design tradeoffs while pushing energy efficiency to a limit. A multipeaking input network is designed to relieve the bandwidth (BW) degradation from parasitics of input interface and ESD diodes. An …

Published in: IEEE Solid-State Circuits Letters
Page(s): 273 – 276
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3603569
Publisher: IEEE

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A 2 pA/ √Hz Input-Referred Noise TIA in 180-nm CMOS With 2.5GHz Bandwidth for Optical Receiver

A 2 pA/ √Hz Input-Referred Noise TIA in 180-nm CMOS With 2.5GHz Bandwidth for Optical Receiver 150 150
Author(s): Yihao Yang, Dan Li, Nan Qi, Binhao Wang

Abstract:

This letter describes an ultra-low-noise, high-speed transimpedance amplifier (TIA) applied to the analog front-end (AFE) circuit of the high-sensitivity optical receiver. A combination of a three-stage amplifier and two positive feedback Miller capacitors is introduced to comprehensively reduce the input-referred noise current (IRNC) of a shunt-feedback TIA (SFTIA) and to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3584266
Publisher: IEEE

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A 10.9nV/√Hz, 74.9dB-DR, 20MS/s Ultrasound Analog Front End for Fully-Digital Beamforming

A 10.9nV/√Hz, 74.9dB-DR, 20MS/s Ultrasound Analog Front End for Fully-Digital Beamforming 150 150
Author(s): Changde Ding, Yan Zhu, Pengjie Wang, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents a compact and energy-efficient analog front-end (AFE) circuit for fully-digital beamforming in endoscopic and catheter-based 3D-ultrasound imaging. The AFE converts single-ended analog input from each transducer element into a 10-bit digital output through a low-noise amplifier (LNA) and a 20 MS/s SAR ADC. To minimize chip area …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3581584
Publisher: IEEE

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A 45-V Auto-Zero-Stabilized Chopper Instrumentation Amplifier With 1.8- μ V Offset, 33.5- μ V Ripple, and 42-V Common-Mode Input Range

A 45-V Auto-Zero-Stabilized Chopper Instrumentation Amplifier With 1.8- μ V Offset, 33.5- μ V Ripple, and 42-V Common-Mode Input Range 150 150
Author(s): Jiahao Wang, Shen Ye, Shiqi Zhang, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents a 45V high-precision current-feedback instrumentation amplifier (CFIA) that combines both chopping and auto-zeroing (AZ) to achieve 1.8- $mu $ V input offset (10 samples) and 33.5- $mu $ V input-referred ripple. The AZ is duty cycled to minimize power and silicon area, with a parallel auxiliary path operating during AZ …

Published in: IEEE Solid-State Circuits Letters
Page(s): 173 – 176
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3576393
Publisher: IEEE

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An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K 150 150
Author(s): Hafeez Raza, Shivendra Singh Parihar, Yogesh Singh Chauhan, Hussam Amrouch, Avinash Lahgere

Abstract:

In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum operating voltage ( $V_{\min }$ ) of 5-nm Fin Field-Effect Transistors (FinFETs)-based Static Random Access Memory (SRAM) cells. To perform the SRAM $V_{\min }$ evaluation, we have measured the FinFETs fabricated using a commercial 5…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 42 – 50
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3560215
Publisher: IEEE

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A 9-GHz Low-In-Band Noise Sub-Sampling-Chopper PLL With Charge-Share Canceling Technique

A 9-GHz Low-In-Band Noise Sub-Sampling-Chopper PLL With Charge-Share Canceling Technique 150 150
Author(s): Xiangjian Kong, Kai Xu, Huanlin Xie, Mingchao Jian, Hao Lian, Robert Bogdan Staszewski, Chunbing Guo

Abstract:

This article presents a low-jitter sub-sampling chopper phase-locked loop (SS-CPLL) that incorporates a novel chopping charge pump (C-CP) to mitigate 1/f noise in short-channel devices operating at a low supply voltage of 0.75 V. A charge-share cancellation technique is introduced to suppress ripple generated by residual charge from the previous reference …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1384 – 1396
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3532504
Publisher: IEEE

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