Circuits

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LUT-Based Convolutional Tsetlin Machine Accelerator With Dynamic Clause Scaling for Resources-Constrained FPGAs

LUT-Based Convolutional Tsetlin Machine Accelerator With Dynamic Clause Scaling for Resources-Constrained FPGAs 150 150
Author(s): Rashed Al Amin, Roman Obermaisser

Abstract:

The rapid growth of machine learning (ML) workloads, particularly in computer vision applications, has significantly increased computational and energy demands in modern electronic systems, motivating the use of hardware accelerators to offload processing from general-purpose processors. Despite advances in computationally efficient ML models, achieving energy-efficient inference on resource-constrained edge devices …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 45 – 55
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3676833
Publisher: IEEE

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Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process 150 150
Author(s): Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah

Abstract:

Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However, their analog nature introduces device-level variability that impacts computational accuracy. This work presents the characterization …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 27 – 35
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3670667
Publisher: IEEE

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A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE

A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE 150 150
Author(s): Yudai Yamazaki, Yohei Morishita, Sunghwan Park, Takaya Uchino, Chenxin Liu, Jun Sakamaki, Akihiro Egami, Ryosuke Hasaba, Ken Takahashi, Tomoki Abe, Tomohiro Murata, Yoichi Nakagawa, Takashi Tomura, Hiroshi Taneda, Kei Murayama, Makoto Tsukahara, Hiroko Ota, Yoko Nakabayashi, Ryuji Kinugawa, Takumi Kojima, Anyi Tian, Kotaro Ito, Chun Wang, Hans Herdian, Yi Zhang, Zheng Li, Wenqian Wang, Hongye Huang, Dingxin Xu, Sena Kato, Michihiro Ide, Shinsuke Hara, Issei Watanabe, Akifumi Kasamatsu, Yuncheng Zhang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Koji Takinami, Kenichi Okada

Abstract:

This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1275 – 1293
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665184
Publisher: IEEE

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1–1.7-GHz Single-Voltage-Controlled Tunable MMIC BPF With Over 45-dB Rejection to 30 GHz Using Tapped Inductor Technique

1–1.7-GHz Single-Voltage-Controlled Tunable MMIC BPF With Over 45-dB Rejection to 30 GHz Using Tapped Inductor Technique 150 150
Author(s): Di Lu, Menghan Sun, Baoqi Zhu, Xin Jiang, Ming Yu

Abstract:

This article presents a novel fourth-order single-voltage-controlled (SVC) tunable monolithic microwave integrated circuit (MMIC) bandpass filter (BPF) for tunable filter bank applications. Utilizing the tapped inductor technique (TIT), the proposed filter achieves compact magnetic coupling with reduced loss, avoiding the use of bulky inductor- or transformer-based coupling structures. The filter …

Published in: IEEE Solid-State Circuits Letters
Page(s): 105 – 108
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668386
Publisher: IEEE

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An Aging-Robust 32-MHz RC Frequency Reference With 0.4-ppm Allan Deviation and ±1550-ppm Inaccuracy From −40 °C to 125 °C After a 1-Point Trim

An Aging-Robust 32-MHz RC Frequency Reference With 0.4-ppm Allan Deviation and ±1550-ppm Inaccuracy From −40 °C to 125 °C After a 1-Point Trim 150 150
Author(s): Sining Pan, Xiaohan Liu, Junlong Zeng, Yihang Cheng, Kofi. A. A. Makinwa, Huaqiang Wu

Abstract:

This letter presents an aging-robust 32-MHz RC frequency reference based on a frequency-locked-loop (FLL). With a temperature compensation scheme that combines BJTs and aging-robust diffusion resistors, the FLL achieves ±1550-ppm inaccuracy from $-40~^{\circ }$ C to $125~^{\circ }$ C after batch calibration and a low-cost 1-point trim, which increases to ±2350-ppm …

Published in: IEEE Solid-State Circuits Letters
Page(s): 81 – 84
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3664504
Publisher: IEEE

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A Modular Ring-Oscillator Array Chip for Accurate Stress Testing of CMOS Aging Mechanisms

A Modular Ring-Oscillator Array Chip for Accurate Stress Testing of CMOS Aging Mechanisms 150 150
Author(s): Javier Diaz-Fortuny, Erik Bury, Robin Degraeve, Ben Kaczer

Abstract:

Ring-oscillator (RO) circuits have historically been used to characterize the performance of CMOS technologies, as they can easily expose both process variability and aging through a straightforward circuit structure. ROs are widely employed to study degradation mechanisms such as bias temperature instability (BTI) and hot carrier degradation (HCD), which progressively …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3653472
Publisher: IEEE

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A 77-fJ/bit 8-Gbps Adaptive-Voltage-Compatible Self-Timed Die-to-Die Link for 2.5-D and 3-D Interconnect in 3 nm

A 77-fJ/bit 8-Gbps Adaptive-Voltage-Compatible Self-Timed Die-to-Die Link for 2.5-D and 3-D Interconnect in 3 nm 150 150
Author(s): Brian Zimmer, Stephen G. Tell, C. Thomas Gray

Abstract:

This work presents a self-timed die-to-die link that serializes four data bits per pin for 2.5-D, or 3-D interconnects using a standard adaptive digital clock and voltage supply. The link achieves 8 Gbps of per-pin bandwidth with a latency of one cycle, energy efficiency of 77 fJ/b, and bandwidth density of 44…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3658215
Publisher: IEEE

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Coupled Simulation Methodology for In-Memory Computing Systems

Coupled Simulation Methodology for In-Memory Computing Systems 150 150
Author(s): Daniel Schön, Christian Owusu-Afriyie, Quang Huy Nguyen, Rainer Leupers, Stephan Menzel, Melvin Galicia

Abstract:

Simulations for the development and optimization of future in-memory computing (IMC) systems often face the problem that the modeling of the large system is desired, but at the same time, the effects at the device level should also be taken into account. Such effects could be due to the material …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 18 – 26
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3652426
Publisher: IEEE

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A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology

A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology 150 150
Author(s): Saroj Satapathy, Amlan Ghosh, John Riley, Jalal Quadri, Jaydeep Kulkarni, Feroze Merchant

Abstract:

Advanced CMOS memory requires voltage biasing assist techniques to achieve low operating voltages (Vmin), which must be deactivated at higher voltages for high electric field reliability. Centralized power management unit (PMU) control signals face timing synchronization and process tracking challenges when distributed across cores to activate assist circuits in various …

Published in: IEEE Solid-State Circuits Letters
Page(s): 37 – 40
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652110
Publisher: IEEE

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