Circuits

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A 28-nm System-in-One-Macro Computing-in-Memory Chip Utilizing Leakage-Eliminated 2T1C and Capacitor-Over-Logic 1T1C eDRAM

A 28-nm System-in-One-Macro Computing-in-Memory Chip Utilizing Leakage-Eliminated 2T1C and Capacitor-Over-Logic 1T1C eDRAM 150 150
Author(s): Zhihang Qian, Zhaori Cong, Shengzhe Yan, Zeyu Guo, Zhuoyu Dai, Yifan He, Wenyu Sun, Chunmeng Dou, Feng Zhang, Di Geng, Jinshan Yue, Yongpan Liu, Qi Liu, Ming Liu

Abstract:

Computing-in-memory (CIM) is a promising paradigm for energy- and area-efficient implementation of the heavy general matrix multiplication (GEMM) operations, especially in the evolving deep learning algorithms. Though existing CIM macros have demonstrated remarkable energy/area efficiency, the corresponding metrics of the system-level CIM chips degrade due to the peripheral components, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684971
Publisher: IEEE

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A MEMS-Free 4096-Pixel CMOS E-Nose Array With MOF-Based Molecular Selectivity, In-Pixel Thermal Regeneration, and a Compact Single-Coefficient Bandpass Sigma–Delta ADC

A MEMS-Free 4096-Pixel CMOS E-Nose Array With MOF-Based Molecular Selectivity, In-Pixel Thermal Regeneration, and a Compact Single-Coefficient Bandpass Sigma–Delta ADC 150 150
Author(s): Marco Saif, Adam Y. Wang, Shao-Wei Lo, Fuze Jiang, Zhikai Huang, Jiachen Wang, Hangxing Liu, Chih-Jen Shih, Thomas Burger, Hua Wang

Abstract:

This work presents a CMOS-only [micro-electromechanical systems (MEMS)-free] electronic nose (e-nose) for concurrent multi-gas-sensing applications. The proposed system integrates 4096 capacitance-to-digital converter (CDC) pixels, each implementing a compact bandpass sigma–delta ( $\Sigma \Delta $ ) ADC with a single feedback coefficient and no additional feedforward or feedback paths, achieving each pixel footprint …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3685410
Publisher: IEEE

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A 40k-Pixel Multimodal Biophysiology Monitoring Platform With 10k Concurrent Electrophysiology Channels and a Mixer-Embedded ΣΔ Impedance Sensor

A 40k-Pixel Multimodal Biophysiology Monitoring Platform With 10k Concurrent Electrophysiology Channels and a Mixer-Embedded ΣΔ Impedance Sensor 150 150
Author(s): Hangxing Liu, Fuze Jiang, Jingjing Zang, Marco Saif, Thomas Burger, Stephan C. F. Neuhauss, Hua Wang

Abstract:

Understanding complex physiological processes requires the ability to monitor multiple biological modalities concurrently, as electrical, ionic, and biochemical processes are tightly coupled and cannot be holistically described by single-mode sensors. This article presents a 40 nm CMOS multimodal cellular physiology monitoring platform that integrates 40 960 reconfigurable pixels at $10.8~\mu $ m pixel pitch. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684715
Publisher: IEEE

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An 18.3-μW 108.3-dB DR Discrete-Time Delta-Sigma Modulator Using a Loop Filter Auto-Shift Technique

An 18.3-μW 108.3-dB DR Discrete-Time Delta-Sigma Modulator Using a Loop Filter Auto-Shift Technique 150 150
Author(s): Cong Wei, Ziqiang Peng, Lijie Huang, Jinze Lai, Rongshan Wei, Xiaoqiang Lu, Zhichao Tan

Abstract:

This article presents a discrete-time, third-order, single-loop, 17-level delta-sigma modulator (DSM) for high-dynamic-range sensor measurement applications, which employs a loop filter auto-shift (LFAS) technique. It uses an on-chip 1.5-bit Schmitt monitor to determine whether the input amplitude is large or small. The DSM automatically shifts to loop filter A for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684106
Publisher: IEEE

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A 16-MHz CMOS RC Frequency Reference Achieving Accuracies of ±125 ppm From −40 °C to 85 °C and −560/+580 ppm After Accelerated Aging

A 16-MHz CMOS RC Frequency Reference Achieving Accuracies of ±125 ppm From −40 °C to 85 °C and −560/+580 ppm After Accelerated Aging 150 150
Author(s): Runtao Huo, Weihao Jie, Yiwen Zhang, Honglan Jiang, Hui Wang

Abstract:

This article presents a low-power, high-accuracy CMOS RC frequency reference featuring a capacitively modulated RC time constant (CMT) generation and a die-to-die error removal (DDER) technique for precise frequency generation with a low-calibration cost. Unlike resistive trimming, the temperature dependence of the on-chip resistor is compensated by a $\Delta \Sigma $ …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684094
Publisher: IEEE

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A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input

A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input 150 150
Author(s): Hongzhi Liang, Jun Chang, Yixiao Luo, Li Dang, Haolin Han, Yi Shen, Dengquan Li, Shubin Liu, Ruixue Ding, Zhangming Zhu

Abstract:

This article presents a 32-GS/s 16-channel hierarchical time-interleaved (TI) hybrid analog-to-digital converter (ADC). The prototype utilizes the intrinsic high-speed quantization of time-domain (TD) ADC to reduce the interleaving factor. By incorporating hierarchical sampling and a cascode sampler, the compact TI-ADC achieves 44.3-dB spurious-free dynamic range (SFDR) at 20.9-GHz input. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680919
Publisher: IEEE

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An 800-MS/s 13-b 2× TI Pipelined-SAR ADC With Rapid Digital Amplification

An 800-MS/s 13-b 2× TI Pipelined-SAR ADC With Rapid Digital Amplification 150 150
Author(s): Peizhe Li, Danfeng Zhai, Qi Liu, Chixiao Chen

Abstract:

This work proposes a rapid digital amplification (RDA) with residue-aware reference, offering an equivalent open-loop (OL) gain enhancement of 25 dB and reducing the interstage gain error (ISGE)-induced SNR degradation by 20 dB, with an extra amplification latency of only 200 ps. It is implemented in an 800-MS/s 13-b two-way time-interleaved (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 137 – 140
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3684735
Publisher: IEEE

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A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power

A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power 150 150
Author(s): Quanrong Zhuang, Junyi Sun, Bo Li, Jie Lu, Zixu Wang, Qi’an Zhu, Xin Zhang, Yi Shi, Hao Qiu

Abstract:

Targeting the wireless power transfer (WPT) to implantable medical devices (IMDs), this work presents a 6.78 MHz single-stage dual-output (SSDO) regulating rectifier. It can support the simultaneous charging of both outputs ( $V_{\text {OUT1}}$ and $V_{\text {OUT2}}$ , $V_{\text {OUT1}} \gt V_{\text {OUT2}}$ ) in a half cycle, rather than …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682308
Publisher: IEEE

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A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems

A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems 150 150
Author(s): Chun-Yuan Chen, Yi-Chun Huang, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Abstract:

This article proposes an envelope-tracking (ET) supply modulator (SM) that is scalable for sixth-generation (6G) communication systems. The design leverages a cost-efficient CMOS process for the power converters and a high-performance GaN process for the high-frequency power amplifier (PA) and the depletion-mode-only GaN-based amplifier. The proposed ET supply modulator (ETSM) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681319
Publisher: IEEE

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