Circuits

  • No Comments

A Fully-Dynamic Capacitive Touch Sensor With Tri-level Energy Recycling and Compressive Sensing Technique

A Fully-Dynamic Capacitive Touch Sensor With Tri-level Energy Recycling and Compressive Sensing Technique 150 150
Author(s): Xiangdong Feng, Zhiyu Wang, Haoyang Li, Jiaqing Li, Wei-Chin Lin, Xin Hu, Zhong Tang, Yuyan Liu, Qinwen Fan, Yuxuan Luo, Bo Zhao

Abstract:

Capacitive touch screens have become the dominant user interface over the past decade. Achieving high framerates with low power consumption remains a critical design goal for touch systems. The conventional charge-recycling technique reduces driving power by 64%, but it relies on off-chip capacitors. To address this issue, we propose a tri-level …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3612093
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices

Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices 150 150
Author(s): Masanori Natsui, Tomoo Yoshida, Takahiro Hanyu

Abstract:

This article proposes a circuit configuration for an area- and energy-efficient nonvolatile register using magnetic tunnel junction (MTJ) devices, suitable for persistent computation in intermittent computing environments. The proposed configuration, named the reference-load sharing scheme (RLSS), stores 1 bit of information using the resistance of a dedicated MTJ device and a …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 90 – 98
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3611365
Publisher: IEEE

View on IEEE Xplore

  • No Comments

SLiMDO: A Single-Link Multi-Domain-Output Isolated DC–DC Converter With Passive Magnetic Flux Sharing for Local Energy Distribution and Rx Behavior Sensing-Based Global Power Modulation

SLiMDO: A Single-Link Multi-Domain-Output Isolated DC–DC Converter With Passive Magnetic Flux Sharing for Local Energy Distribution and Rx Behavior Sensing-Based Global Power Modulation 150 150
Author(s): Jianqiang Jiang, Lei Zhao, Junyao Tang, Cheng Huang

Abstract:

This article introduces a small form-factor single-link multi-domain-output (SLiMDO) isolated dc–dc converter design. The proposed design provides two regulated outputs in separate domains in the receiver (Rx) side with a single micro-transformer. These isolated Rxes achieve local voltage regulation and automatic energy distribution across domains through passive magnetic flux …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606903
Publisher: IEEE

View on IEEE Xplore

  • No Comments

24.86 Gb/s Full-Digital Chaos Random Number 1.53 GSamples/s Noise Generator in 40nm CMOS

24.86 Gb/s Full-Digital Chaos Random Number 1.53 GSamples/s Noise Generator in 40nm CMOS 150 150
Author(s): Cheng-Bin Chen, Tsung Chen, Yuan-Hao Huang

Abstract:

This letter presents a fully digital true random number generator (TRNG) and noise generator (NG) based on a chaos system. We design the chaos random number generator (CRNG) using the proposed Euler-based modified Lorenz system with periodic perturbation and modified modulo unit. The chaos NG (CNG) processor integrates the CRNG …

Published in: IEEE Solid-State Circuits Letters
Page(s): 253 – 256
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3605369
Publisher: IEEE

View on IEEE Xplore

  • No Comments

FIMA: A Scalable Ferroelectric Compute-in-Memory Annealer for Accelerating Boolean Satisfiability

FIMA: A Scalable Ferroelectric Compute-in-Memory Annealer for Accelerating Boolean Satisfiability 150 150
Author(s): Mohammad Khairul Bashar, T. H. Pantha, Z. Li, M. Farasat, S. Datta, V. Narayanan, S. Dutta, N. Shukla

Abstract:

In-memory compute kernels present a promising approach for addressing data-centric workloads. However, their scalability—particularly for computationally intensive tasks solving combinatorial optimization problems such as Boolean satisfiability (SAT), which are inherently difficult to decompose—remains a significant challenge. In this work, we propose a ferroelectric nonvolatile memory (NVM)-based compute-in-memory …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 81 – 89
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3603942
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors 150 150
Author(s): Wei Zhang, Jianze Wang, Xuanyao Fong

Abstract:

We utilized phase-field simulations to investigate the effects of polar-axis (PA) orientation fluctuations on the extrinsic properties of single ferroelectric (FE) grains, focusing on the coercive electrical field (EC) and the remnant polarization (Pr). The underlying mechanisms through which PA orientation fluctuations influence polarization behavior are studied to gain insights …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 74 – 80
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3586589
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors

A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors 150 150
Author(s): Zikang Lin, Xiaohui Wu, Shujing Zhao, Weihua Liu, Xin Li, Li Geng, Chuanyu Han

Abstract:

In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 60 – 66
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3573709
Publisher: IEEE

View on IEEE Xplore

  • No Comments

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability 150 150
Author(s): Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects. A rigorously calibrated TCAD model, validated against experimental CFET data, is employed to quantify the impact of metal gate granularity (MGG)-induced …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 51 – 59
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3568622
Publisher: IEEE

View on IEEE Xplore

  • No Comments

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K

An Investigation of Minimum Supply Voltage of 5-nm SRAM From 300 K Down to 10 K 150 150
Author(s): Hafeez Raza, Shivendra Singh Parihar, Yogesh Singh Chauhan, Hussam Amrouch, Avinash Lahgere

Abstract:

In this article, we present a comprehensive study of the impact of cryogenic temperatures on the minimum operating voltage ( $V_{\min }$ ) of 5-nm Fin Field-Effect Transistors (FinFETs)-based Static Random Access Memory (SRAM) cells. To perform the SRAM $V_{\min }$ evaluation, we have measured the FinFETs fabricated using a commercial 5…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 42 – 50
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3560215
Publisher: IEEE

View on IEEE Xplore

Search this website