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A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation 150 150

Abstract:

In this article, we present a differentially injection-locked clock multiplier (ILCM) featuring an ultra-wide frequency tuning range (TR) and low jitter, achieved through a compact folded-inductor-based magnetic-flux cancellation technique. A co-designed series-LC dual-mode quadrature ring oscillator (QRO) and edge-combining frequency doubler operating in the mm-wave band jointly extend the TR …

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A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks

A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks 150 150

Abstract:

This letter presents a design methodology for broadband and compact millimeter-wave (mm-wave) single-pole double-throw (SPDT) switches targeting the Ku–Ka band. Conventional SPDT switches based on quarter-wavelength transmission line typically occupy significant chip area, while alternative designs utilizing standard $\pi $ -type equivalent circuits often suffer from bandwidth degradation due to …

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

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A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery

A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery 150 150

Abstract:

This article presents a 32-channel time-multiplexed highly digital neural recording front-end (RFE) that exhibits sub- $8.8~\mu $ s recovery latency from large stimulation artifacts while delivering high-resolution data at the Nyquist rate. The RFE is time-shared across 32 channels for low-frequency electrocorticography (ECoG) recording and across four channels for high-frequency action potentials (…

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BASS-PLL: A Bandwidth Augmented Sub-Sampling PLL Achieving a Wide Bandwidth Above 30% of the Reference Frequency and a Worst Case FoMREF of −247.9 dB at 3 GHz With a Ring Oscillator

BASS-PLL: A Bandwidth Augmented Sub-Sampling PLL Achieving a Wide Bandwidth Above 30% of the Reference Frequency and a Worst Case FoMREF of −247.9 dB at 3 GHz With a Ring Oscillator 150 150

Abstract:

This work presents a bandwidth augmented sub-sampling phase-locked loop (BASS-PLL) architecture that features simultaneous out-of-band noise suppression by direct and multipath sampling of the ring oscillator’s (ROs) output and in-band noise suppression via an intrinsic sub-sampling mechanism, ultimately combining the benefits of over-sampling PLLs (OS-PLLs) and sub-sampling PLLs (SS-PLLs) …

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A Fast-Settling mm-Wave LO With I/Q-Calibrated SSB Mixer and Frequency-Tuned ILO Filter Achieving Sub-ns Settling Time and −56 dBc Spur

A Fast-Settling mm-Wave LO With I/Q-Calibrated SSB Mixer and Frequency-Tuned ILO Filter Achieving Sub-ns Settling Time and −56 dBc Spur 150 150

Abstract:

This article presents a fast-settling 60-GHz local oscillator (LO) for stepped-carrier orthogonal frequency-division multiplexing (OFDM), employing an I/Q-calibrated single-sideband (SSB) mixer with a frequency-tuned injection-locked oscillator (ILO) filter. The SSB mixer enables instantaneous frequency hopping, while the ILO acts as a high- $Q$ bandpass filter that suppresses mixer-induced spurs. …

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A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs

A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs 150 150

Abstract:

The challenge of evolving to create a memory that is shrinking compared to the previous generation while satisfying the high performance and low power required for flash memory has been present in every generation, but the recent rapid change to artificial intelligence (AI) trends is very tough, as the level …

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3-D Stacked HBM and Compute Accelerators for LLM: Optimizing Thermal Management and Power Delivery Efficiency

3-D Stacked HBM and Compute Accelerators for LLM: Optimizing Thermal Management and Power Delivery Efficiency 150 150

Abstract:

Advanced packaging is becoming essential for designing hardware accelerators for large language models (LLMs). Different architectures, such as 2.5-D integration of memory with logic, have been proposed; however, the bandwidth limits the throughput of the complete system. Recent works have proposed memory on logic systems, where high bandwidth memory (HBM) …

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A Compact Current-Reusing 6-mW 66–92 GHz Frequency Quadrupler With 5% Peak Power Added Efficiency and >36 dBc Harmonic Rejection in 22-nm FDSOI CMOS

A Compact Current-Reusing 6-mW 66–92 GHz Frequency Quadrupler With 5% Peak Power Added Efficiency and >36 dBc Harmonic Rejection in 22-nm FDSOI CMOS 150 150

Abstract:

This letter presents a frequency quadrupler with 32% fractional bandwidth (66–92 GHz) and 5% peak power-added efficiency (PAE), capable of operating with an input power of 0 dBm. The quadrupler consisting of two cascaded frequency doublers uses a multiport driven push-push complementary architecture for the first stage to generate differential signals for the second …

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