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A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation 150 150
Author(s): Feifan Hong, Jiawen Chen, Pingda Guan, Sayan Kumar, Robert Bogdan Staszewski, Teerachot Siriburanon

Abstract:

In this article, we present a differentially injection-locked clock multiplier (ILCM) featuring an ultra-wide frequency tuning range (TR) and low jitter, achieved through a compact folded-inductor-based magnetic-flux cancellation technique. A co-designed series-LC dual-mode quadrature ring oscillator (QRO) and edge-combining frequency doubler operating in the mm-wave band jointly extend the TR …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1410 – 1424
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3640957
Publisher: IEEE

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150
Author(s): Runzhou Chen, Hao-Yu Chien, Boxun Yan, Chao-Jen Tien, Mau-Chung Frank Chang

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1776 – 1790
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644224
Publisher: IEEE

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A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery

A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery 150 150
Author(s): Arindam Mandal, Chi-Hsiang Huang, Julian Arenas, Wei-En Lee, Kevin D. Patino-Sosa, Philip Anschutz, Amanda Jacob, Keshav Ramachandra, Samuel Sober, Muhannad S. Bakir, Shaolan Li, Visvesh S. Sathe

Abstract:

This article presents a 32-channel time-multiplexed highly digital neural recording front-end (RFE) that exhibits sub- $8.8~\mu $ s recovery latency from large stimulation artifacts while delivering high-resolution data at the Nyquist rate. The RFE is time-shared across 32 channels for low-frequency electrocorticography (ECoG) recording and across four channels for high-frequency action potentials (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1053 – 1067
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643367
Publisher: IEEE

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A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity

A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity 150 150
Author(s): Feng Cheng, Jianlin Xia, Encheng Zhu, Long Zhang, Zhongyuan Fang, Xiaofeng Sun, Dejin Wang, Shaoping Li, Jing Zhu, Yongjia Li, Weifeng Sun

Abstract:

This article proposes a hybrid magnetic current sensor achieving a 15-MHz bandwidth within a compact 2.7-mm2 area. To mitigate the pole–zero mismatch inherent in the two-stage integrator topology, a dual-output Gm-C integrator with subtractor-based compensation is proposed, achieving a ±0.8% local gain non-uniformity. A wideband feedforward ripple suppression scheme cancels …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3692476
Publisher: IEEE

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A 0.5–2.5-GS/s Resettable Ring-VCO-Based ADC Eliminating Quantization-Noise Shaping

A 0.5–2.5-GS/s Resettable Ring-VCO-Based ADC Eliminating Quantization-Noise Shaping 150 150
Author(s): Tao Lu, Zixiang Liu, Hao Yang, Sai-Weng Sin, Fujiang Lin, Liheng Lou, Robert Bogdan Staszewski, Yizhe Hu

Abstract:

This article presents a Nyquist-rate Analog-to-digital converter (ADC) operating from 0.5 to 2.5 GS/s based on an open-loop resettable ring VCO (R-RVCO). By inherently embedding the $1 {\,}-{\,}z^{-1}$ transfer function, the R-RVCO eliminates the need for an explicit differentiator, suppresses VCO phase-noise (PN) integration, and avoids quantization-noise (QN) shaping within …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3668599
Publisher: IEEE

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Adelia: A 4-nm LLM Processing Unit With Streamlined Dataflow and Dual-Mode Parallelism for Maximizing Hardware Efficiency

Adelia: A 4-nm LLM Processing Unit With Streamlined Dataflow and Dual-Mode Parallelism for Maximizing Hardware Efficiency 150 150
Author(s): Sukbin Lim, Jung-Hoon Kim, Seungjae Moon, Junseo Cha, Dongjin Seo, Jongho Kim, Hunjong Lee, Jinwon Lee, Joo-Young Kim

Abstract:

The proliferation of large language models (LLMs) as cross-domain foundation models is fueled by aggressive scaling in both parameter counts and inference-time computation. The emergence of sophisticated reasoning models further accelerates this trend, demanding longer context windows and escalating the computational and memory burdens of inference. A fundamental challenge arises …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1513 – 1525
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663603
Publisher: IEEE

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O

A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O 150 150
Author(s): Ganesh Balamurugan, Parmanand Mishra, Subal Sahni, Ankur Aggarwal, Simon Forey, Andrew Gimlett, Prateek Goyal, Han Hao, Santosh Hariwan, Masum Hossain, Sejun Jeon, Narayan Kaniyur, David Lazovsky, Wonho Lee, Bengt Littmann, Raj Nagulapalli, Kevin Park, John Rollinson, Matteo Staffaroni, Prakash Thakur, Saurabh Vats, Preet Virk, Dehua Xiao, Hemesh Yasotharan, Raman Yazdani, Waleed Younis, Shifeng Yu, Phil Winterbottom

Abstract:

This work presents a hybrid 3-D-integrated silicon photonic (SiPh) transceiver suitable for realizing chiplet-based optical I/O in future AI/ML ASIC packages. The optical transceiver die stack is composed of two ICs: a SiPh IC (PIC) with micrometer-scale, thermally robust electro-absorption modulators (EAMs), and a 5-nm CMOS electronic IC (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3655295
Publisher: IEEE

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A 0.29 pJ/b 5.27 Tb/s/mm UCIe Advanced Package Link With 2.5-D CoWoS Interposer and a 0.52 pJ/b 0.448 Tb/s/mm UCIe Standard Package Link With Organic Substrate in 3 nm FinFET

A 0.29 pJ/b 5.27 Tb/s/mm UCIe Advanced Package Link With 2.5-D CoWoS Interposer and a 0.52 pJ/b 0.448 Tb/s/mm UCIe Standard Package Link With Organic Substrate in 3 nm FinFET 150 150
Author(s): Didem Turker Melek, James Vandersand, R. Navin Kumar, Pyare M. Sarkar, Prakash BS, Adrian Leuciuc, Kevin Geary, Shaojun Ma, Chirag M. Mehta, Basant Bothra, Shashi Jain, Pawan Sabharwal, Ranjan Vaish, Kirti Bhanushali, Yutong Ding, Craig Frost, John Annunziata, Krishanu Sadhu, Dimitris Kyritsis, Jeff Bostak, Ming Li, Steve Williams, Ken Chang

Abstract:

This work presents two die-to-die (D2D) wireline transceivers, one compliant with the UCIe advanced package (UCIe-AP) and the other with the UCIe standard package (UCIe-SP) standard, developed in 3 nm FinFET. The Universal Chiplet interconnect express (UCIe)-AP link has 64 RX and 64 TX data lanes in one PHY module and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3651425
Publisher: IEEE

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