Bandwidth

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An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization

An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization 150 150
Author(s): Minchang Kim, Hankyu Chi, Sooncheol Kwon, Icsu Oh, Seulgi Kim, Heewoong Song, Daeho Yun, Jaehong Jeong, Daejoon Kim, Kichul Hong, Jeonghyun Park, Woo-Seok Choi, Hae-Kang Jung, Hoyoung Son, Inchul Jeong, Hyungsoo Kim, Jonghwan Kim

Abstract:

This letter presents a simultaneous bidirectional (SBD) transceiver for post HBM4. It is difficult to increase the data rate due to poor channel characteristics of the silicon interposer and the limited physical area of the IO in high-bandwidth memory (HBM) interface. SBD signaling is attractive because it doubles the per-pin …

Published in: IEEE Solid-State Circuits Letters
Page(s): 182 – 185
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3696268
Publisher: IEEE

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A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery

A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery 150 150
Author(s): Arindam Mandal, Chi-Hsiang Huang, Julian Arenas, Wei-En Lee, Kevin D. Patino-Sosa, Philip Anschutz, Amanda Jacob, Keshav Ramachandra, Samuel Sober, Muhannad S. Bakir, Shaolan Li, Visvesh S. Sathe

Abstract:

This article presents a 32-channel time-multiplexed highly digital neural recording front-end (RFE) that exhibits sub- $8.8~\mu $ s recovery latency from large stimulation artifacts while delivering high-resolution data at the Nyquist rate. The RFE is time-shared across 32 channels for low-frequency electrocorticography (ECoG) recording and across four channels for high-frequency action potentials (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1053 – 1067
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643367
Publisher: IEEE

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150
Author(s): Runzhou Chen, Hao-Yu Chien, Boxun Yan, Chao-Jen Tien, Mau-Chung Frank Chang

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1776 – 1790
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644224
Publisher: IEEE

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A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation 150 150
Author(s): Feifan Hong, Jiawen Chen, Pingda Guan, Sayan Kumar, Robert Bogdan Staszewski, Teerachot Siriburanon

Abstract:

In this article, we present a differentially injection-locked clock multiplier (ILCM) featuring an ultra-wide frequency tuning range (TR) and low jitter, achieved through a compact folded-inductor-based magnetic-flux cancellation technique. A co-designed series-LC dual-mode quadrature ring oscillator (QRO) and edge-combining frequency doubler operating in the mm-wave band jointly extend the TR …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1410 – 1424
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3640957
Publisher: IEEE

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A Self-Injection LC Oscillator for Flicker Noise Reduction

A Self-Injection LC Oscillator for Flicker Noise Reduction 150 150
Author(s): Bahram Jafari, Ali Ghafari, Sankaran Aniruddhan, Shahriar Mirabbasi, Sudip Shekhar

Abstract:

Self-injection has been used in lasers and photonic integrated circuits to reduce the laser’s phase noise (PN). We show that self-injection can be leveraged in GHz LC oscillators as well. Our oscillator employs a current-domain self-injection technique by leveraging second-harmonic extraction, capacitive phase shifting, and self-mixing through the oscillator’…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 816 – 829
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643322
Publisher: IEEE

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A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI

A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI 150 150
Author(s): Haisu Ju, Yingtao Zou, Gabriel M. Rebeiz

Abstract:

This article presents a 6.3–18.4GHz in-phase and quadrature (I/Q) direct down-conversion receiver featuring reconfigurability in both the radio frequency (RF) and local oscillator (LO) paths. The receiver comprises a multi-band reconfigurable RF front-end, double-balanced passive I/Q mixers, an I/Q LO generation network with a tunable I/Q …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698025
Publisher: IEEE

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A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity

A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity 150 150
Author(s): Feng Cheng, Jianlin Xia, Encheng Zhu, Long Zhang, Zhongyuan Fang, Xiaofeng Sun, Dejin Wang, Shaoping Li, Jing Zhu, Yongjia Li, Weifeng Sun

Abstract:

This article proposes a hybrid magnetic current sensor achieving a 15-MHz bandwidth within a compact 2.7-mm2 area. To mitigate the pole–zero mismatch inherent in the two-stage integrator topology, a dual-output Gm-C integrator with subtractor-based compensation is proposed, achieving a ±0.8% local gain non-uniformity. A wideband feedforward ripple suppression scheme cancels …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3692476
Publisher: IEEE

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A 0.5–2.5-GS/s Resettable Ring-VCO-Based ADC Eliminating Quantization-Noise Shaping

A 0.5–2.5-GS/s Resettable Ring-VCO-Based ADC Eliminating Quantization-Noise Shaping 150 150
Author(s): Tao Lu, Zixiang Liu, Hao Yang, Sai-Weng Sin, Fujiang Lin, Liheng Lou, Robert Bogdan Staszewski, Yizhe Hu

Abstract:

This article presents a Nyquist-rate Analog-to-digital converter (ADC) operating from 0.5 to 2.5 GS/s based on an open-loop resettable ring VCO (R-RVCO). By inherently embedding the $1 {\,}-{\,}z^{-1}$ transfer function, the R-RVCO eliminates the need for an explicit differentiator, suppresses VCO phase-noise (PN) integration, and avoids quantization-noise (QN) shaping within …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3668599
Publisher: IEEE

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Adelia: A 4-nm LLM Processing Unit With Streamlined Dataflow and Dual-Mode Parallelism for Maximizing Hardware Efficiency

Adelia: A 4-nm LLM Processing Unit With Streamlined Dataflow and Dual-Mode Parallelism for Maximizing Hardware Efficiency 150 150
Author(s): Sukbin Lim, Jung-Hoon Kim, Seungjae Moon, Junseo Cha, Dongjin Seo, Jongho Kim, Hunjong Lee, Jinwon Lee, Joo-Young Kim

Abstract:

The proliferation of large language models (LLMs) as cross-domain foundation models is fueled by aggressive scaling in both parameter counts and inference-time computation. The emergence of sophisticated reasoning models further accelerates this trend, demanding longer context windows and escalating the computational and memory burdens of inference. A fundamental challenge arises …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1513 – 1525
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663603
Publisher: IEEE

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