IEEE Solid-State Circuits Letters – Journals

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A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-coil Peaking and Uniform Group Delay

A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-coil Peaking and Uniform Group Delay 150 150
Author(s): Giovanni Scarlato, John R. Long

Abstract:

A two-stage amplifier in 22-nm FD-SOI CMOS integrates a fully-differential bridged T-coil for the first time. Circuit performance is benchmarked against an identical amplifier topology designed with single-ended T-coils (pseudo-differential) and an unpeaked reference. It realizes 70-GHz bandwidth with $12~\pm ~2$ -ps group delay and >10-dB return loss across 90 GHz. Bandwidth …

Published in: IEEE Solid-State Circuits Letters
Page(s): 65 – 68
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3661366
Publisher: IEEE

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A 39.4-mW 300 MHz-BW 70.9 dB-SNDR Hybrid ADC With Resistive Input and 200 fs, rms-Jitter Tolerance

A 39.4-mW 300 MHz-BW 70.9 dB-SNDR Hybrid ADC With Resistive Input and 200 fs, rms-Jitter Tolerance 150 150
Author(s): Yanquan Luo, Mingtao Zhan, Yi Zhong, Nan Sun

Abstract:

This letter presents a power-efficient hybrid ADC architecture: a low-resolution continuous-time (CT) delta-sigma modulator (DSM) followed by a time-interleaved pipeline stage which further quantizes the quantization noise of the DSM. In the frontend CT DSM, the resistive input makes the ADC easy-to-drive, and the direct-charge-dump feedback (DCD FB) provides a …

Published in: IEEE Solid-State Circuits Letters
Page(s): 61 – 64
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3656180
Publisher: IEEE

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On-Chip Charge-Trap-Transistor-Based Mismatch Calibration of an 8-Bit Thermometer Current-Source DAC

On-Chip Charge-Trap-Transistor-Based Mismatch Calibration of an 8-Bit Thermometer Current-Source DAC 150 150
Author(s): Mohammadreza Zeinali, Sudhakar Pamarti

Abstract:

This letter presents an on-chip mismatch calibration technique for current-source digital-to-analog converters (DACs) using charge-trap transistors (CTTs) in 22-nm FDSOI technology. The proposed method exploits programmable threshold voltage (VTH) shifts in CTTs to locally tune the current of near-minimum-sized devices without external trimming. A compact 8-bit thermometer DAC is implemented …

Published in: IEEE Solid-State Circuits Letters
Page(s): 53 – 56
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3656261
Publisher: IEEE

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A Ring-Oscillator-Based Digital Harmonic-Mixing Fractional-N PLL

A Ring-Oscillator-Based Digital Harmonic-Mixing Fractional-N PLL 150 150
Author(s): Hongyu Lu, Nader Fathy, Patrick P. Mercier

Abstract:

This letter presents a low-jitter digital harmonic-mixing fractional- $N$ phase-locked loop (PLL) using a ring oscillator. To extend the loop bandwidth, a mixer with unity gain in the phase domain is adopted, which helps suppress phase noise of the phase detector and delta-sigma modulator. Furthermore, to reduce mixing harmonics that …

Published in: IEEE Solid-State Circuits Letters
Page(s): 57 – 60
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3654239
Publisher: IEEE

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A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue

A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue 150 150
Author(s): Alin Thomas Tharakan, Cong Huang, Yiheng Fu, Horacio Londoño Ramírez, Stéphanie P. Lacour, Mahsa Shoaran

Abstract:

This letter presents an 8-channel current-mode stimulator achieving a ±10.2 V voltage compliance in a standard CMOS process, supporting up to 4.5 mA stimulation current per channel. The proposed dynamic charge pump (DCP), which adaptively sizes its switches based on the stimulation current, helps achieve ~15% higher power efficiency at low currents compared …

Published in: IEEE Solid-State Circuits Letters
Page(s): 49 – 52
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3653014
Publisher: IEEE

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An Approximate Digital CIM Macro With Low-Power Multiply-Add Units and Dynamic Sparse-Adaptive Configuring for Edge AI Inference

An Approximate Digital CIM Macro With Low-Power Multiply-Add Units and Dynamic Sparse-Adaptive Configuring for Edge AI Inference 150 150
Author(s): Xiaofeng Li, Yi Zhan, Purui Zhu, Rui Zhou, Jiayin Song, Heng You, Yumei Zhou, Shushan Qiao

Abstract:

This letter presents an approximate digital compute-in-memory (CIM) macro for low-power edge AI inference. It introduces three hierarchical innovations: 1) novel fused approximate multiply-add units (FAMUs) that reduces power and area consumption; 2) a bit-critical weight allocation architecture that optimally balances accuracy and hardware cost; and 3) a dynamic sparsity-adaptive configuration method to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 45 – 48
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652570
Publisher: IEEE

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A 1×32 TDC Array With 0.056% Pixel-to-Pixel Variation Using a Global Timer Architecture for LiDAR Applications

A 1×32 TDC Array With 0.056% Pixel-to-Pixel Variation Using a Global Timer Architecture for LiDAR Applications 150 150
Author(s): Hsi-Hao Huang, Zong-Rui Cao, Ying-Ying Cheng, Jia-Yu Lin, Chen-Yi Lee

Abstract:

This letter presents a low pixel-to-pixel variation (PPV) time-to-digital converter (TDC) array designed for light detection and ranging (LiDAR) applications. The TDC array is implemented in a 0.18- $\mu $ m HV CMOS process, integrated with a single-photon avalanche diode (SPAD) array. SPAD-based LiDAR systems require high-precision timing resolution across the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 41 – 44
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652323
Publisher: IEEE

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A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology

A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology 150 150
Author(s): Saroj Satapathy, Amlan Ghosh, John Riley, Jalal Quadri, Jaydeep Kulkarni, Feroze Merchant

Abstract:

Advanced CMOS memory requires voltage biasing assist techniques to achieve low operating voltages (Vmin), which must be deactivated at higher voltages for high electric field reliability. Centralized power management unit (PMU) control signals face timing synchronization and process tracking challenges when distributed across cores to activate assist circuits in various …

Published in: IEEE Solid-State Circuits Letters
Page(s): 37 – 40
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652110
Publisher: IEEE

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Dual-Band Voltage-Controlled Oscillator for CB and HF RFID Bands in a Flexible IGZO Technology

Dual-Band Voltage-Controlled Oscillator for CB and HF RFID Bands in a Flexible IGZO Technology 150 150
Author(s): Lautaro N. Petrauskas, Bahman K. Boroujeni, Frank Ellinger

Abstract:

In this work, a cross-coupled voltage-controlled oscillator (VCO) for the high frequency RFID and citizen bands (CBs) is investigated, and implemented on a flexible Indium gallium zinc oxide thin film transistor (TFT) technology. To circumvent the challenges of integrating passive components in this frequency range and minimize the circuit’s …

Published in: IEEE Solid-State Circuits Letters
Page(s): 33 – 36
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3651909
Publisher: IEEE

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