IEEE Journal of Solid-State Circuits – Journals

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A 9-GHz Low-In-Band Noise Sub-Sampling-Chopper PLL With Charge-Share Canceling Technique

A 9-GHz Low-In-Band Noise Sub-Sampling-Chopper PLL With Charge-Share Canceling Technique 150 150
Author(s): Xiangjian Kong, Kai Xu, Huanlin Xie, Mingchao Jian, Hao Lian, Robert Bogdan Staszewski, Chunbing Guo

Abstract:

This article presents a low-jitter sub-sampling chopper phase-locked loop (SS-CPLL) that incorporates a novel chopping charge pump (C-CP) to mitigate 1/f noise in short-channel devices operating at a low supply voltage of 0.75 V. A charge-share cancellation technique is introduced to suppress ripple generated by residual charge from the previous reference …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1384 – 1396
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3532504
Publisher: IEEE

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A Ping-Pong Charge-Sharing Locking PLL With Implicit Reference Doubling and Simultaneous Frequency/Duty-Cycle Calibrations

A Ping-Pong Charge-Sharing Locking PLL With Implicit Reference Doubling and Simultaneous Frequency/Duty-Cycle Calibrations 150 150
Author(s): Sayan Kumar, Teerachot Siriburanon, Sumit Dash, Patchara Sawakewang, Shuja Andrabi, Jon Strange, Khurram Muhammad, Chih-Ming Hung, Robert Bogdan Staszewski

Abstract:

We propose a new ping-pong (PP) charge-sharing locking (CSL) phase-locked loop (PLL) architecture that enhances the strength of charge-injection into the oscillator’s LC-tank using complementary charge-sharing capacitors during both positive and negative halves of the reference clock, effectively achieving an implicit $2times $ reference frequency multiplication. The design includes a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1368 – 1383
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3535888
Publisher: IEEE

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A 32 Gb/s 0.36 pJ/bit 3 nm Chiplet IO Using 2.5-D CoWoS Package With Real-Time and Per-Lane CDR and Bathtub Monitoring

A 32 Gb/s 0.36 pJ/bit 3 nm Chiplet IO Using 2.5-D CoWoS Package With Real-Time and Per-Lane CDR and Bathtub Monitoring 150 150
Author(s): Junhui Gu, John Ma, Azhar Ahmed Chowdhury, Jianmin Guo, Xin Zhang, Jackson Ding, Hui Wang, Ken Chang

Abstract:

This article presents a high-density, single-ended non return to zero (NRZ) chiplet I/O implemented with 3 nm CMOS technology on a 2.5-D chip-on-wafer-on-substrate (CoWoS) interposer, accommodating trace lengths up to 2 mm. The design features 216 data lanes, each operating at 32 Gb/s. For the tested 2-mm trace, the channel insertion loss …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1289 – 1298
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3545483
Publisher: IEEE

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A Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression

A Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression 150 150
Author(s): Jamie C. Ye, Alain H. Antón, Sanaz Sadeghi, Russ H. Huang, Alyosha C. Molnar

Abstract:

A high dynamic range N-path passive mixer-first receiver architecture capable of simultaneously down-converting two arbitrary bands through a single RF port is presented. The architecture consists of two passive mixers arranged in a series configuration with a transformer front-end to minimize cross-loading between mixers while still providing impedance transparency and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1541 – 1553
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3546082
Publisher: IEEE

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MINOTAUR: A Posit-Based 0.42–0.50-TOPS/W Edge Transformer Inference and Training Accelerator

MINOTAUR: A Posit-Based 0.42–0.50-TOPS/W Edge Transformer Inference and Training Accelerator 150 150
Author(s): Kartik Prabhu, Robert M. Radway, Jeffrey Yu, Kai Bartolone, Massimo Giordano, Fabian Peddinghaus, Yonatan Urman, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina

Abstract:

Transformer models have revolutionized natural language processing (NLP) and enabled many new applications, but are challenging to deploy on resource-constrained edge devices due to their high computation and memory demands. We present MINOTAUR, an edge system-on-chip (SoC) for inference and fine-tuning of Transformer models with all memory on the chip. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1311 – 1323
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3545731
Publisher: IEEE

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A 430- μ A 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control

A 430- μ A 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control 150 150
Author(s): Jiaqi Dong, Qi Zhang, Xinwen Zhang, Yekan Chen, Yili Shen, Bo Zhao, Yuxuan Luo

Abstract:

This article introduces a high-acoustic-dynamic-range and low-power digital microphone based on the electrostatic force feedback control (EFFC). The proposed design adjusts the sensitivity of the micro-electro-mechanical system (MEMS) by adaptively biasing it at different input amplitudes, thereby extending the dynamic range (DR). The proposed adaptive biasing technique allows the induced …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1199 – 1209
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3531509
Publisher: IEEE

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Single-X-Ray Sensitive Energy-Binning Dosimeter for Closed-Loop Cancer External-Beam Radiotherapy

Single-X-Ray Sensitive Energy-Binning Dosimeter for Closed-Loop Cancer External-Beam Radiotherapy 150 150
Author(s): Rahul Lall, Kyoungtae Lee, Adam Cunha, Rebecca Abergel, Youngho Seo, Ali M. Niknejad, Mekhail Anwar

Abstract:

X-ray radiation dose delivered during cancer external-beam radiotherapy (EBRT) is nonlinear with the biological effect imparted to cancer cells and neighboring healthy tissues. This oftentimes leads to insufficient damage to cancer cells and excessive damage to the surrounding healthy tissues, both increasing toxicity and the risk of cancer recurrence later …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1423 – 1436
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529848
Publisher: IEEE

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A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface

A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface 150 150
Author(s): Jing Wang, Jun He, Man-Kay Law, Xinzhe Wang, Futian Liang, Lin Cheng

Abstract:

This work proposes a temperature and process-compensated low-power Cryo-CMOS voltage reference without trimming for quantum integrated interface, which is capable of operating continuously from room temperature (RT) down to cryogenic temperatures. By compensating for the main accuracy limiting factors including the process dependence of the transistor threshold voltage, device mismatch …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3242 – 3256
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3530472
Publisher: IEEE

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A Low-Power Blocker-Tolerant Wideband Receiver With Bias-Tunable Mixer and Effective Switch Resistance Compensation

A Low-Power Blocker-Tolerant Wideband Receiver With Bias-Tunable Mixer and Effective Switch Resistance Compensation 150 150
Author(s): Rundi Wu, Yetong Wang, Ran Hong, Zongle Ma, Kenan Xie, Fanyi Meng, Kaixue Ma, Keping Wang

Abstract:

This article presents a mixer-first blocker-tolerant receiver (RX) with effective switch resistance ( ${R} _{\text {SW}}$ ) compensation and high-Q selectivity. By analyzing the impact of non-ideal 1/N LO duty cycle and effective ${R} _{\text {SW}}$ on mixer-first RX, an effective ${R} _{\text {SW}}$ compensation technique is proposed to mitigate noise figure (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1554 – 1569
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529681
Publisher: IEEE

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