IEEE Journal of Solid-State Circuits – Early Access

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A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation

A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation 150 150
Author(s): Jhuang-Wei Cyue, Tai-Haur Kuo

Abstract:

This article presents a digital-input class-D audio amplifier (CDA) that employs a double-sided voltage-boosting (DSVB) modulation scheme, integrating a capacitively coupled chopper amplifier (CCCA) with a single-inductor buck–boost power stage. The CCCA achieves a high dynamic range (DR) due to its very low noise floor and is implemented with …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602261
Publisher: IEEE

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A 240-/255-GHz High-Efficiency Fundamental Differential Oscillator Based on Ring Oscillator Theory in 22-nm FDSOI

A 240-/255-GHz High-Efficiency Fundamental Differential Oscillator Based on Ring Oscillator Theory in 22-nm FDSOI 150 150
Author(s): Yue Liang, Qin Chen, Xujun Ma, Xu Wu, Xiangning Fan, Patrick Reynaert, Lianming Li

Abstract:

This article proposes a synthesis method for a ring oscillator, which directly utilizes the transistor large-signal voltage/current (V/I) conditions and the required phase shift of each stage to calculate the element values of the embedding passive network (EPN). Accordingly, an EPN synthesis flow is outlined to allow parameter …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3603485
Publisher: IEEE

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A Compact and Ultra-Low-Power 32-kHz Conduction-Angle-Adaptive Crystal Oscillator

A Compact and Ultra-Low-Power 32-kHz Conduction-Angle-Adaptive Crystal Oscillator 150 150
Author(s): Peng Wang, Manyu Wang, Guangnan Dai, Yujia Cao, Sining Pan, Yihan Zhang

Abstract:

This article presents an ultra-low-power and compact 32-kHz crystal oscillator (XO) with intrinsic start-up capability for real-time clock (RTC) applications. The key idea is to operate a Pierce oscillator in a class-C-like fashion, with a digitally defined conduction angle generated based on the current oscillation amplitude. Hence, the XO can …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3603830
Publisher: IEEE

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A 1.52-W Capacitor-Drop Sigma-Floating-SC AC/DC Converter for Grid Power to IoT Devices

A 1.52-W Capacitor-Drop Sigma-Floating-SC AC/DC Converter for Grid Power to IoT Devices 150 150
Author(s): Fei Song, Shousheng Han, Rui P. Martins, Yan Lu

Abstract:

This work proposes a switched-capacitor (SC)-based non-isolated ac–dc power converter, converting the ac mains (110V @ 60Hz or 230V @ 50Hz) input to a single-cell battery voltage (3.3–4.6V), optimized for the Internet-of-Things (IoT) and smart home devices. We use a sigma-SC rectifier to reduce the freewheeling current loss and to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3603990
Publisher: IEEE

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A 1131-kb/mm2 14.0-to-53.3-TOPS/W 8-bit Analog-Assisted Digital Compute-in-Memory With Hybrid Local-Refresh eDRAM for Attention Computing

A 1131-kb/mm2 14.0-to-53.3-TOPS/W 8-bit Analog-Assisted Digital Compute-in-Memory With Hybrid Local-Refresh eDRAM for Attention Computing 150 150
Author(s): Jiahao Song, Xiyuan Tang, Bocheng Xu, Haikang Diao, Haoyang Luo, Zihan Wu, Yuan Wang, Runsheng Wang, Ru Huang

Abstract:

This article presents an eDRAM-based analog-assisted digital computing-in-memory (CIM) core that offers superior power and area efficiency for dynamic sparse attention computing. For different queries, it uses efficient low-precision analog pre-computing to filter out irrelevant in-memory key groups. As a result, each query only needs to attend to a small …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3580366
Publisher: IEEE

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A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application

A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application 150 150
Author(s): Sekeon Kim, Giseok Kim, Kyeongrim Baek, Keonhee Cho, Hyunjun Kim, Yeonho Jung, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Abstract:

The general approach to suppress leakage in static random access memory (SRAM) is to use a low voltage ( $V_{text {L}}$ ), generated by a low-dropout regulator (LDO), as the cell supply voltage (CVDD) of SRAM array in the standby mode. However, the effectiveness of lowering CVDD is constrained by the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3582974
Publisher: IEEE

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RXO-LDPC: A Physics-Inspired Relaxation Oscillator-Based Solver Leveraging Six-Body Spin Interactions for Soft Decoding of LDPC Codes

RXO-LDPC: A Physics-Inspired Relaxation Oscillator-Based Solver Leveraging Six-Body Spin Interactions for Soft Decoding of LDPC Codes 150 150
Author(s): Evangelos Dikopoulos, Luke Wormald, Ying-Tuan Hsu, Wei Tang, Po-Shao Chen, Zhengya Zhang, Michael P. Flynn

Abstract:

Physics-inspired computing harnesses continuous-time (CT) operation, massive parallelism, and direct compute load mapping to coupled CMOS-based spins to accelerate solving complex optimization problems. This work advances the field by introducing relaxation oscillator (RXO)-low-density parity check (LDPC), a combinatorial optimization problem (COP) engine that natively supports six-body spin interactions for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3561780
Publisher: IEEE

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