Voltage control

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A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application

A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application 150 150
Author(s): Sekeon Kim, Giseok Kim, Kyeongrim Baek, Keonhee Cho, Hyunjun Kim, Yeonho Jung, Dongwook Seo, Sangyeop Baeck, Sungjae Lee, Seong-Ook Jung

Abstract:

The general approach to suppress leakage in static random access memory (SRAM) is to use a low voltage ( $V_{text {L}}$ ), generated by a low-dropout regulator (LDO), as the cell supply voltage (CVDD) of SRAM array in the standby mode. However, the effectiveness of lowering CVDD is constrained by the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3582974
Publisher: IEEE

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Digital Low-Dropout Regulator-Assisted Buck DC-DC Converter Achieving 68-mV Droop Voltage and 95.5% Efficiency

Digital Low-Dropout Regulator-Assisted Buck DC-DC Converter Achieving 68-mV Droop Voltage and 95.5% Efficiency 150 150
Author(s): Yichen Xu, Zhaoqing Wang, Rentao Wan, Suhwan Kim, Minxiang Gong, Ram Krishnamurthy, Xin Zhang, Mingoo Seok

Abstract:

This paper proposes a digital low-dropout regulator (DLDO)-assisted buck converter featuring one-step computational droop compensation and DLDO feedback-controlled current handover. The 28-nm test chip achieves a 68-mV droop voltage and a 112-ns settling time for a 1A/0.8ns load step while maintaining a high peak efficiency of 95.5%.

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3581844
Publisher: IEEE

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