Topology

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Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multitier CFET SRAM

Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multitier CFET SRAM 150 150
Author(s): Yutian Zhang, Jiaquan Fang, Khawar Sarfraz, Mansun Chan

Abstract:

This work shows that a multitier complementary FET (CFET) static random access memory (SRAM) can decouple the area term from PPA-oriented transistor sizing. A topology-aware layout design is used to construct orthogonal and point-symmetric multitier CFET SRAM cells under 1-nm-class design rules, enabling high-density (HD), high-performance (HP), and high-current (HC) …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 159 – 166
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3709007
Publisher: IEEE

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An Extendable Wideband Band-Divided SPnT Switch Topology Based on a Reconfigurable Pole-to-Throw Network

An Extendable Wideband Band-Divided SPnT Switch Topology Based on a Reconfigurable Pole-to-Throw Network 150 150
Author(s): Zhaowu Wang, Hao Ning, Xinyan Li, Ze Yu, Qiliang Li, Xiaochen Tang, Yong Wang

Abstract:

This article presents an extendable wideband band-divided SP $n$ T switch topology based on a reconfigurable pole-to-throw network (RPTN). Compared to conventions, it mitigates the loss degradation resulting from complex signal routing in advanced RF front-ends. This is enabled by the RPTN, which divides the throws into low-/mid-/high-band (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3711644
Publisher: IEEE

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A Three-Level Dual-Path Hybrid Buck Converter With Mitigated Capacitive Current and Seamless DVS Across a Wide Output Voltage Range

A Three-Level Dual-Path Hybrid Buck Converter With Mitigated Capacitive Current and Seamless DVS Across a Wide Output Voltage Range 150 150
Author(s): Jae-Hyun Kim, Jun-Gi Lee, Hyunki Han, Hyun-Sik Kim

Abstract:

This article presents a three-level dual-path (TLDP) buck converter tailored for mobile application processors (APs) with a 1.8-V input and 0.4–1.5-V output range. Conventional buck (CB) and multi-level buck (MLB) converters suffer from prohibitive DC resistance ( $R_{\mathrm {DCR}}$ ) losses in compact inductors as load current increases. Although various multi-path …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3710310
Publisher: IEEE

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A Nesting-Connected Reconfigurable SC Converter With Fine-Grained Conversion Ratios and Increased Output Conduction Paths for On-Chip Surround Power Delivery

A Nesting-Connected Reconfigurable SC Converter With Fine-Grained Conversion Ratios and Increased Output Conduction Paths for On-Chip Surround Power Delivery 150 150
Author(s): Xuchu Mu, Yang Jiang, Xin Ming, Bo Zhang, Rui P. Martins, Pui-In Mak

Abstract:

This article presents a reconfigurable switched-capacitor (SC) DC–DC converter that achieves improved overall efficiency over a fine-grained conversion-ratio range, applicable to on-chip surround power delivery (SPD) in compact and lightweight devices. We propose a nesting-connected reconfigurable SC topology generation method, attaining fine-grained subdivision of reconfigurable voltage conversion ratios (VCRs) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3702012
Publisher: IEEE

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A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS

A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS 150 150
Author(s): Chenghao Zhang, Maliang Liu, Yuan Chang, Yihang Yang, Jinhai Xiao, Yintang Yang, Yong Chen

Abstract:

This article reports a 40-GS/s 8-bit time-interleaved (TI) time-domain (TD) gated-ring-oscillator analog-to-digital converter (GRO-ADC). An interleaving number of 32 is achieved with a single-channel 8-bit GRO-ADC operating at 1.25 GS/s, leading to a low front-end design complexity compared to recently published arts. The sampling front end employs a linearity-enhanced boosted …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1907 – 1920
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671459
Publisher: IEEE

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A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS

A K/Ka-Band Transmit/Receive Front-End With Triple-Coupled Transformer Technique in 65-nm Bulk CMOS 150 150
Author(s): Nayu Li, Ziyao Xiong, Botao Yang, Hang Lu, Yiwei Liu, Xiaokang Qi, Gaopeng Chen, Na Yan, Chunyi Song, Zhiwei Xu

Abstract:

This article presents a K/Ka-band transmit/receive (T/R) front-end for jointed sensing and communication (JSAC) applications. A reconfigurable matching network for both signal reception and transmission is realized using the proposed triple-coupled transformer (TCT) technique, achieving low power loss and a compact footprint. The T/R switch at …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667736
Publisher: IEEE

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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A 60-GHz Low-Noise mmWave Divider-Less Fractional-N Cascaded PLL Achieving −250.2-dB FoMJ in 28-nm CMOS

A 60-GHz Low-Noise mmWave Divider-Less Fractional-N Cascaded PLL Achieving −250.2-dB FoMJ in 28-nm CMOS 150 150
Author(s): Jaehong Jung, Eunseok Lee, Donghyeon Han, Jinchen Wang, Anantha P. Chandrakasan, Ruonan Han

Abstract:

This article presents a fractional- ${ {N}}$ cascaded phase-locked loop (PLL) operating in the mmWave band from 55.8 to 64.2 GHz. The cascaded architecture consists of a first-stage fractional- ${ {N}}$ reference-sampling (RS) PLL and a second-stage sub-sampling (SS) PLL, incorporating two key innovations. The first-stage RS-PLL leverages a fully differential voltage-domain quantization-noise cancellation (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3652928
Publisher: IEEE

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A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications

A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications 150 150
Author(s): Pei Qin, Junyu Wu, Taotao Xu, Yongchun Li, Wenjie Feng, Quan Xue, Wenquan Che

Abstract:

This article presents a reconfigurable dual-path dual-band low noise amplifier (LNA) for fifth generation (5G) millimeter-wave (mmW) communications. A novel band-switching input matching architecture based on the cross-connected transistors is proposed to achieve optimal dual-band input matching and $g_{m}$ -boosting. This architecture allows the dual-band input transistors to share …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3661593
Publisher: IEEE

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