Timing

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A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications

A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications 150 150
Author(s): Maysara Hamada, Mostafa Toubar, Zixu Wang, Nishant Bakshi, Hsiang-Chun Cheng, Mayank Palaria, Joshua Yang, Mike Shuo-Wei Chen

Abstract:

As crossbar-based analog computing grows in popularity for high-speed, energy-efficient processing, the need to drive discrete-time signals to heavy loads arises. This letter presents a novel bi-slewing CMOS driver utilizing high slew-rate error amplifiers and a push–pull stage. The proposed driver achieves a measured settling time of 8.5 ns and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 218 – 221
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3717852
Publisher: IEEE

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A 4-GS/s 53.5-dB SNDR 12.9 fJ/conv. TI-SAR ADC With Capacitive Nonlinearity Compensation and Dual-Mode Offset Calibration

A 4-GS/s 53.5-dB SNDR 12.9 fJ/conv. TI-SAR ADC With Capacitive Nonlinearity Compensation and Dual-Mode Offset Calibration 150 150
Author(s): Jiazhen Ni, Dayi Zhou, Minqing Cai, Chen Chen, Xiang Gao, Seung-Chul Lee

Abstract:

Successive approximation register (SAR) analog-to-digital converters (ADCs) often employ dual-mode dynamic comparators to achieve both high speed and low noise. However, under low-supply operation, offset drift from mode transitions and degraded front-end linearity due to limited signal headroom become critical challenges. To address these issues, an adaptive current-injection scheme suppresses …

Published in: IEEE Solid-State Circuits Letters
Page(s): 214 – 217
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3713349
Publisher: IEEE

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A 64-Gb/s/pin 0.25-pJ/b Single-Ended Short-Reach PAM4 Transceiver in 28-nm CMOS

A 64-Gb/s/pin 0.25-pJ/b Single-Ended Short-Reach PAM4 Transceiver in 28-nm CMOS 150 150
Author(s): Kshitiz Tyagi, Kunbo Ma, Joung Won Park, Behzad Razavi

Abstract:

We present a transceiver architecture for single-ended PAM4 signaling, introducing an inverter-based active-inductor terminated front-end that obviates the need for further equalizer stages, substantially reducing power and area. Realized in 28-nm CMOS technology, the 4-lane link operates at 64 Gb/s/pin with a bit error rate less than 10-12 while …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3721808
Publisher: IEEE

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Probabilistic Computing With Neuromorphic Elements

Probabilistic Computing With Neuromorphic Elements 150 150
Author(s): Zonglong Li, Laurie E. Calvet

Abstract:

This article presents a compact and low-power approach to probabilistic inference based on time-domain analog computation. The proposed system implements a Bayesian classifier using neuromorphic circuit elements simulated in a 130-nm CMOS technology. Probabilities are encoded in the duty cycle of deterministic spiking signals generated by neuron circuits, while likelihood …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 167 – 175
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3712198
Publisher: IEEE

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Open DRAM Model—Part II: Enabling Processing-in-Memory in 3-D DRAM

Open DRAM Model—Part II: Enabling Processing-in-Memory in 3-D DRAM 150 150
Author(s): Kiseok Lee, Seongkwang Lim, Suman Datta, Shimeng Yu

Abstract:

Processing-in-memory (PIM) by implementing Boolean logic functions in dynamic random access memory (DRAM) has been proposed to alleviate the memory wall problem in data-intensive computing. However, quantitatively evaluating DRAM-based logic operations across different DRAM architectures remains challenging due to the lack of publicly available DRAM cell and peripheral transistor models …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 144 – 152
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704508
Publisher: IEEE

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A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2

A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2 150 150
Author(s): Marco Pasotti, Riccardo Zurla, J. J. Bertolini Agnoletto, Emanuela Calvetti, Alessio Antolini, Andrea Lico, Giuseppe Desoli, Riccardo Vignali, Luca Iannelli, Luigi Croce, Francesco Zavalloni, Eleonora Franchi Scarselli, Alessandro Cabrini

Abstract:

In-memory computing (IMC) hardware accelerators for deep neural networks (DNNs) require storing a massive number of coefficients within a single computing macro to avoid performance degradation in multicore clusters. This aspect, often overlooked by common figures of merit (FoMs), can be effectively addressed by phase-change memory (PCM) technology, thanks to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3193 – 3207
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3693894
Publisher: IEEE

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A Mixed-Signal SAT Solver for Exploring Nonideal Effects and Scalability in Analog Computation

A Mixed-Signal SAT Solver for Exploring Nonideal Effects and Scalability in Analog Computation 150 150
Author(s): Ahmet Yusuf Salim, Soner Seçkiner, Eslam Elmitwalli, Zeljko Ignjatovic, Selçuk Köse

Abstract:

Recent years have seen growing interest in custom and nature-inspired computing methods for solving computationally challenging combinatorial optimization problems. The Boolean satisfiability (SAT), a canonical nondeterministic polynomial (NP)-complete problem, has remained a focal point due to its wide applicability in artificial intelligence, cryptography, and formal verification. This article presents …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 19
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3721413
Publisher: IEEE

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A 6-bit Serializer With Integrated Manchester Encoder Using Flexible a-IGZO TFT Technology

A 6-bit Serializer With Integrated Manchester Encoder Using Flexible a-IGZO TFT Technology 150 150
Author(s): Suyash Shrivastava, Pydi Ganga Bahubalindruni

Abstract:

This article presents an experimental characterization of a novel 6-bit parallel-to-serial data converter integrated with a Manchester encoder. The system comprises an on-chip digital logic block that generates six mutually nonoverlapping control signals ( $\phi _{0-5}$ ) and three 120° phase-shifted clock signals to drive the switching transistors in the serializer and the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 194 – 197
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3707465
Publisher: IEEE

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A 300-μW BLE-Compliant Packet-Based Data-Agnostic Clock-Harvesting RX Achieving −85/−70 dBm Sensitivity for ±40/±15 ppm Accuracy

A 300-μW BLE-Compliant Packet-Based Data-Agnostic Clock-Harvesting RX Achieving −85/−70 dBm Sensitivity for ±40/±15 ppm Accuracy 150 150
Author(s): Maryam Dodangeh, Mark S. Oude Alink, Jan Prummel, Bram Nauta

Abstract:

An ultralow-power Bluetooth low energy (BLE)-compliant crystal-less clock-harvesting receiver is presented that uses the BLE advertising packets (APs) to calibrate an on-chip frequency reference with ±400 ppm initial frequency offset. The proposed front-end, fabricated in 22 nm FDSOI, is capable of pushing the frequency accuracy of the reference further to below ±40/±15 …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3718973
Publisher: IEEE

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