Temperature measurement

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PANNA: A 558 TOPS/W Pipelined All-Analog Neural Network Accelerator in 22 nm FD-SOI

PANNA: A 558 TOPS/W Pipelined All-Analog Neural Network Accelerator in 22 nm FD-SOI 150 150
Author(s): Jakob Finkbeiner, Raphael Nägele, Manuel Wittlinger, Markus Grözing, Manfred Berroth, Georg Rademacher

Abstract:

Analog computing offers intrinsic energy and latency benefits that makes it attractive for real-time and edge applications. Conventional analog accelerators suffer from repeated conversions between analog and digital domain, which degrades efficiency and throughput. We propose an all-analog pipelined neural network accelerator architecture in 22 nm fully-depleted silicon-on-insulator (FD-SOI) complementary metal-oxide-semiconductor (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 365 – 368
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3627274
Publisher: IEEE

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A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management

A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management 150 150
Author(s): Hikmet Seha Öztürk, Julian Arenas, Carlos Tokunaga, Nasser Kurd, Visvesh S. Sathe

Abstract:

This article presents a fine-grained thermal sensing network for thermal management in SoCs. Sensor nodes in this network are made up of joint supply voltage ( $V_{\mathrm {dd}}$ ) and temperature ( $T$ ) sensors, which are compact and highly digital. Measurements from these simple but imperfect sensors are jointly processed to extract …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621280
Publisher: IEEE

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A 0.4-V 32-kHz Pulse-Injection Temperature-Compensated Crystal Oscillator With Sub-Cycle CL Modulation and DLL-Reused Temperature Sensor

A 0.4-V 32-kHz Pulse-Injection Temperature-Compensated Crystal Oscillator With Sub-Cycle CL Modulation and DLL-Reused Temperature Sensor 150 150
Author(s): Haihua Li, Pui-In Mak, Rui P. Martins, Ka-Meng Lei

Abstract:

This article presents a 0.4-V 32 kHz pulse-injection (PI) temperature-compensated crystal oscillator (TCXO) that incorporates subcycle capacitive load ( $C_{\text {L}}$ ) modulation for frequency compensation. The proposed TCXO compensates for the crystal’s frequency deviation ( $\Delta f$ ) by dynamically adjusting the enabling duration of the additional $C_{\text {L}}$ within each …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3620824
Publisher: IEEE

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A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance

A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance 150 150
Author(s): Esteban Garzón, Eyal Rechef, Roman Golman, Odem Harel, Yuval Harary, Paz Snapir, Marco Lanuzza, Adam Teman, Leonid Yavits

Abstract:

The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3009 – 3019
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529715
Publisher: IEEE

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