Temperature measurement

  • No Comments

A MEMS-Free 4096-Pixel CMOS E-Nose Array With MOF-Based Molecular Selectivity, In-Pixel Thermal Regeneration, and a Compact Single-Coefficient Bandpass Sigma–Delta ADC

A MEMS-Free 4096-Pixel CMOS E-Nose Array With MOF-Based Molecular Selectivity, In-Pixel Thermal Regeneration, and a Compact Single-Coefficient Bandpass Sigma–Delta ADC 150 150
Author(s): Marco Saif, Adam Y. Wang, Shao-Wei Lo, Fuze Jiang, Zhikai Huang, Jiachen Wang, Hangxing Liu, Chih-Jen Shih, Thomas Burger, Hua Wang

Abstract:

This work presents a CMOS-only [micro-electromechanical systems (MEMS)-free] electronic nose (e-nose) for concurrent multi-gas-sensing applications. The proposed system integrates 4096 capacitance-to-digital converter (CDC) pixels, each implementing a compact bandpass sigma–delta ( $\Sigma \Delta $ ) ADC with a single feedback coefficient and no additional feedforward or feedback paths, achieving each pixel footprint …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3685410
Publisher: IEEE

View on IEEE Xplore

  • No Comments

An Eye-Opening Arbiter PUF With Auto-Error Detection and PVT-Robust Masking Achieving a BER of 2e-8

An Eye-Opening Arbiter PUF With Auto-Error Detection and PVT-Robust Masking Achieving a BER of 2e-8 150 150
Author(s): Bjoern Driemeyer, Holger Mandry, David-Peter Wiens, John G. Kauffman, Joachim Becker, Maurits Ortmanns

Abstract:

A hybrid ring oscillator (RO)/ arbiter physical unclonable function (PUF) is implemented in a 28-nm CMOS, where two competing ROs accumulate a sufficiently large phase difference exceeding a predefined deadzone (DZ). The resulting eye-opening arbiter (EOA) architecture enables a prediction of PUF bit stability over temperature change (from −40 °C to $125~^{\…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663673
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O

A 56-Gb/s Hybrid Silicon Photonic and 5-nm CMOS 3-D-Integrated Transceiver for Optical Compute I/O 150 150
Author(s): Ganesh Balamurugan, Parmanand Mishra, Subal Sahni, Ankur Aggarwal, Simon Forey, Andrew Gimlett, Prateek Goyal, Han Hao, Santosh Hariwan, Masum Hossain, Sejun Jeon, Narayan Kaniyur, David Lazovsky, Wonho Lee, Bengt Littmann, Raj Nagulapalli, Kevin Park, John Rollinson, Matteo Staffaroni, Prakash Thakur, Saurabh Vats, Preet Virk, Dehua Xiao, Hemesh Yasotharan, Raman Yazdani, Waleed Younis, Shifeng Yu, Phil Winterbottom

Abstract:

This work presents a hybrid 3-D-integrated silicon photonic (SiPh) transceiver suitable for realizing chiplet-based optical I/O in future AI/ML ASIC packages. The optical transceiver die stack is composed of two ICs: a SiPh IC (PIC) with micrometer-scale, thermally robust electro-absorption modulators (EAMs), and a 5-nm CMOS electronic IC (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3655295
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-coil Peaking and Uniform Group Delay

A 70-GHz Bandwidth Amplifier With Integrated Differential Bridged T-coil Peaking and Uniform Group Delay 150 150
Author(s): Giovanni Scarlato, John R. Long

Abstract:

A two-stage amplifier in 22-nm FD-SOI CMOS integrates a fully-differential bridged T-coil for the first time. Circuit performance is benchmarked against an identical amplifier topology designed with single-ended T-coils (pseudo-differential) and an unpeaked reference. It realizes 70-GHz bandwidth with $12~\pm ~2$ -ps group delay and >10-dB return loss across 90 GHz. Bandwidth …

Published in: IEEE Solid-State Circuits Letters
Page(s): 65 – 68
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3661366
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K

A Cryo-CMOS Smart Temperature Sensor for the Ultrawide Temperature Range From 5 K to 296 K 150 150
Author(s): D. Cerviño Fungueiriño, L. A. Enthoven, J. van Staveren, M. Babaie, F. Sebastiano

Abstract:

This work presents a cryo-CMOS smart temperature sensor operating from room temperature down to 5 K. By adopting sensing elements (CMOS bulk diodes, pMOS/DTMOS in weak inversion) that circumvent the poor cryogenic performance of Si BJTs, a robust switched-capacitor second-order sigma–delta readout and cryogenic-aware design techniques, the sensor achieves …

Published in: IEEE Solid-State Circuits Letters
Page(s): 29 – 32
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3650657
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles

Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles 150 150
Author(s): Junyi Qian, Lishuo Deng, Cai Li, Yizhi Ding, Weiwei Shan

Abstract:

Advances in integrated circuit (IC) technology have amplified the effects of process, voltage, and temperature (PVT) variations, particularly dynamic IR drop, which severely affects timing. Post-silicon IR drop monitoring circuits are lacking, forcing designers to reserve substantial static guard bands for worst-case scenarios, compromising energy efficiency. Inspired by biomimetics, this …

Published in: IEEE Solid-State Circuits Letters
Page(s): 25 – 28
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3645701
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Advancing On-Cell Near-Field Monitoring for Thermal Runaway Detection in EV Batteries

Advancing On-Cell Near-Field Monitoring for Thermal Runaway Detection in EV Batteries 150 150
Author(s): Simon Foster, Scott Block, Daniel McMitchell, Edgar Colin-Beltran, Robert Dailey

Abstract:

A cell monitoring system for performance and safety enhancement is presented. It is the first commercially available single-chip-on-cell near-field contactless solution for automotive battery management, simplifying pack interconnect and reducing points of failure. This letter is a companion paper to the earlier ISSCC paper. It provides further details on the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 369 – 372
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3634340
Publisher: IEEE

View on IEEE Xplore

  • No Comments

PANNA: A 558 TOPS/W Pipelined All-Analog Neural Network Accelerator in 22 nm FD-SOI

PANNA: A 558 TOPS/W Pipelined All-Analog Neural Network Accelerator in 22 nm FD-SOI 150 150
Author(s): Jakob Finkbeiner, Raphael Nägele, Manuel Wittlinger, Markus Grözing, Manfred Berroth, Georg Rademacher

Abstract:

Analog computing offers intrinsic energy and latency benefits that makes it attractive for real-time and edge applications. Conventional analog accelerators suffer from repeated conversions between analog and digital domain, which degrades efficiency and throughput. We propose an all-analog pipelined neural network accelerator architecture in 22 nm fully-depleted silicon-on-insulator (FD-SOI) complementary metal-oxide-semiconductor (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 365 – 368
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3627274
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management

A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management 150 150
Author(s): Hikmet Seha Öztürk, Julian Arenas, Carlos Tokunaga, Nasser Kurd, Visvesh S. Sathe

Abstract:

This article presents a fine-grained thermal sensing network for thermal management in SoCs. Sensor nodes in this network are made up of joint supply voltage ( $V_{\mathrm {dd}}$ ) and temperature ( $T$ ) sensors, which are compact and highly digital. Measurements from these simple but imperfect sensors are jointly processed to extract …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621280
Publisher: IEEE

View on IEEE Xplore

Search this website