Radio frequency

Full-Duplex Receiver With Wideband, High-Power RF Self-Interference Cancellation Based on Capacitor Stacking in Switched-Capacitor Delay Lines

Full-Duplex Receiver With Wideband, High-Power RF Self-Interference Cancellation Based on Capacitor Stacking in Switched-Capacitor Delay Lines 150 150

Abstract:

The self-interference (SI) channels in full-duplex (FD) radios have large nano-second-scale delay spreads, which poses a significant challenge in designing SI cancelers that can emulate the SI channel over wide bandwidths. Passive implementations of high delay lines have a prohibitively large form factor and loss when implemented on silicon, whereas …

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A D-Band Wideband Single-Ended Neutralized Up-Conversion Mixer with Controlled LO Feedthrough in 65nm CMOS

A D-Band Wideband Single-Ended Neutralized Up-Conversion Mixer with Controlled LO Feedthrough in 65nm CMOS 150 150

Abstract:

A D-band wideband passive single-ended up-conversion mixer with controlled LO feedthrough in 65nm CMOS process is presented in this letter. The LO feedthrough was controlled by the varactor and the neutralizing transmission line between the LO and RF ports of the mixer. In measurement, the proposed passive single-ended mixer had …

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A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression

A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression 150 150

Abstract:

This article presents a multi-antenna RF energy harvester (MARFEH) with leakage suppression to achieve high output power and avoid the effects of interference and blind spots in the room, and all the RF rectifiers share only one buffering capacitor to achieve low cost. The proposed leakage-suppressed rectifier utilizing adaptive $V_{…

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A Low-Power, Compact, 0.1–5.5-GHz, 40-dBm IB OIP3 LNTA-First Receiver for SDR

A Low-Power, Compact, 0.1–5.5-GHz, 40-dBm IB OIP3 LNTA-First Receiver for SDR 150 150

Abstract:

This article presents a low-power (LP), compact, wideband (WB) low-noise transconductance amplifier (LNTA)-first receiver (RX) designed for software-defined radios (SDRs). It comprises the LNTA, frequency divider, mixer, and trans-impedance amplifier (TIA). The LNTA utilizes a common gate (CG)-common source (CS) structure without on-chip inductors and incorporates gm-boosting and …

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A 4-Element Ka-Band Phased-Array Receiver With Code-Domain Hybrid Beamforming

A 4-Element Ka-Band Phased-Array Receiver With Code-Domain Hybrid Beamforming 150 150

Abstract:

This letter presents a 4-element phased-array receiver with code-domain hybrid beamforming (CDHBF) in 65-nm CMOS technology. Code-division multiplexing is used to fully preserve the flexibility in the digital domain while using a single RF interface, which reduces the RF chain complexity, reduces the chip area, and improves power efficiency. Phase …

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A 300- $\mu$ W 2.4-GHz PVT-Insensitive Subthreshold Reference-Based LNA

A 300- $\mu$ W 2.4-GHz PVT-Insensitive Subthreshold Reference-Based LNA 150 150

Abstract:

This article introduces a novel ultra-low-power reference-based low-noise amplifier (LNA) designed to reduce performance variations due to process, voltage, and temperature (PVT) when operating in the subthreshold region. The LNA is embedded within a reference circuit that directly controls the performance of the LNA over PVT variations. By combining the …

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An Ultrasound Receiver With Bandwidth-Enhanced Current Conveyor and Element-Level Ultrasound Transmitter for Ultrasound Imaging Systems

An Ultrasound Receiver With Bandwidth-Enhanced Current Conveyor and Element-Level Ultrasound Transmitter for Ultrasound Imaging Systems 150 150

Abstract:

In this letter, we present an ultrasound (US) imaging system with a low-noise US receiver (RX) and an element-level US transmitter (TX) for a capacitive micromachined ultrasonic transducer (CMUT). The proposed US RX isolates the input parasitic capacitance $(C_{P})$ from the front-end transimpedance stage by using a bandwidth-enhanced current …

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Sustainable Status Monitoring of MOSFETs in a Fully Integrated RF Amplifier by Thermal Voltage Sensing of On-Chip Thermopile

Sustainable Status Monitoring of MOSFETs in a Fully Integrated RF Amplifier by Thermal Voltage Sensing of On-Chip Thermopile 150 150

Abstract:

In this letter, a sustainable status monitoring of MOSFETs in a fully integrated two stage RF amplifier by thermal voltage sensing of on-chip thermopile is implemented in 0.18- $\mu \text{m}$ CMOS technology. The designed micro-thermopile consists of many thermocouples electrically connected in series by Al and P-type polysilicon, which …

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