Quantization (signal)

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An 11.95-ENOB 560-MS/s Amplifier-Switching Subranging Analog-to-Digital Converter With Multi-Threshold Comparators

An 11.95-ENOB 560-MS/s Amplifier-Switching Subranging Analog-to-Digital Converter With Multi-Threshold Comparators 150 150
Author(s): Ritaro Takenaka, Tetsuya Iizuka

Abstract:

This article proposes a 14-bit, 560-MS/s subranging analog-to-digital converter (ADC) that employs an amplifier-switching architecture with multi-threshold comparators. The proposed amplifier-switching architecture reuses a flash quantizer multiple times during subranging conversion by amplifying the residue voltage with an appropriate gain at each quantization step. This approach reduces the required …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3647024
Publisher: IEEE

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A 92.1-dB SNDR Easy-Driving Two-Step NS-SAR-Based Incremental ADC With Concurrent Gain-Error Plus Noise Suppression

A 92.1-dB SNDR Easy-Driving Two-Step NS-SAR-Based Incremental ADC With Concurrent Gain-Error Plus Noise Suppression 150 150
Author(s): Chenyang Li, Tzu-Han Wang, Dongsuk Kang, Ken Li, Xitie Zhang, Wei-En Lee, Visvesh S. Sathe, Shaolan Li

Abstract:

This article presents a two-step incremental analog-to-digital converter (ADC) that achieves high resolution and energy efficiency while substantially easing the input driving constraints and interstage gain variation. By employing a level-shifted sub-ranging architecture with an input-tracking (IT) feature, the design obviates direct input sampling, thereby significantly relaxing the demands on …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3635146
Publisher: IEEE

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A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC

A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC 150 150
Author(s): Vaidehi Garg, Jianwei Jia, Omkar Phadke, Shimeng Yu

Abstract:

Compute-in-memory (CIM) using emerging nonvolatile memory devices is a promising candidate for energy-efficient deep neural network (DNN) inference at the edge. Ferroelectric field-effect transistors (FeFETs) have recently gained attention as nonvolatile, CMOS-compatible devices with a higher on/off ratio and lower read and write energy compared to resistive random-access memory (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3640522
Publisher: IEEE

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A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques

A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques 150 150
Author(s): Qiang Yu, Zheng Zhu, Lulu Zhang, Qin Huang, Yao Feng, Chao Liang, Biao Hu, Ling Du, Rongbin Yang, Shuangyi Wu, Qiang Li

Abstract:

This letter presents a 14-bit 500-MS/s 3-stage pipelined successive approximation register (SAR) analog-to-digital converter (ADC). By exploiting robust 2b/cycle SAR ADCs, this ADC incorporates significant voltage and time redundancy. High SFDR is achieved through several linearity enhancement techniques. First, a DAC splitting technique addresses the common-mode voltage matching …

Published in: IEEE Solid-State Circuits Letters
Page(s): 9 – 12
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3639322
Publisher: IEEE

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MEGA.mini: An Energy-Efficient NPU Leveraging a Novel Big/Little Core With Hybrid Input Activation for Generative AI Acceleration

MEGA.mini: An Energy-Efficient NPU Leveraging a Novel Big/Little Core With Hybrid Input Activation for Generative AI Acceleration 150 150
Author(s): Donghyeon Han, Anantha P. Chandrakasan

Abstract:

This article presents a processor for the acceleration of generative AI (GenAI) based on a novel heterogeneous core architecture called MEGA.mini. The processor introduces three algorithmic features: 1) fixed-point (FXP) and floating-point (FP) hybrid input activation (IA) representation; 2) a delayed-statistics-based normalization (NORM); and 3) conditional polynomial-based nonlinear activation (NLA) approximation. These …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3626894
Publisher: IEEE

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A Calibration-Free Pipelined-SAR ADC With Cross-Stage Gain-Mismatch Error Shaping and Inherent Noise Shaping

A Calibration-Free Pipelined-SAR ADC With Cross-Stage Gain-Mismatch Error Shaping and Inherent Noise Shaping 150 150
Author(s): Jihang Gao, Yaohui Luan, Siyuan Ye, Jiajia Cui, Xinhang Xu, Linxiao Shen

Abstract:

This article presents a calibration-free pipelined-successive-approximation-register (SAR) analog-to-digital converter (ADC) based on the proposed cross-stage gain-mismatch-error shaping (CS-GMES) mechanism. The CS-GMES is realized by including the entire 2nd stage into MES operation to unify the gain error and the 2nd-stage mismatch error. A feedback capacitor provides cross-stage connection and mismatch …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3624412
Publisher: IEEE

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A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source

A 14-b Energy-Efficient BW/Power Scalable CTDSM With a Frequency-Controlled Current Source 150 150
Author(s): Xinjie Wu, Xiaopeng Yu, Nick Nianxiong Tan, Zhong Tang

Abstract:

This work presents a 14-bit energy-efficient bandwidth (BW)/power scalable continuous-time delta–sigma modulator (CTDSM) for sensor interfaces in IoT applications. To ensure low noise for small input signals and achieve BW/power scalability, it is built around Gm-C integrators biased via a linear frequency-controlled current source (FCCS). The FCCS …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621527
Publisher: IEEE

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DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core

DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense–Sparse Core 150 150
Author(s): Donghyuk Kim, Jae-Young Kim, Hyunjun Cho, Seungjae Yoo, Sukjin Lee, Sungwoong Yune, Sejeong Yang, Hoichang Jeong, Keonhee Park, Ki-Soo Lee, Jongchan Lee, Chanheum Han, Gunmo Koo, Yuli Han, Jaejin Kim, Jaemin Kim, Kyuho Jason Lee, Joo-Hyung Chae, Kunhee Cho, Joo-Young Kim

Abstract:

Transformer models have revolutionized artificial intelligence (AI) applications across various domains, but their increasing complexity poses significant challenges in terms of computational and memory demands. While processing-in-memory (PIM) paradigms have been adopted to address these limitations, existing PIM-based transformer accelerators still face hurdles such as: 1) focusing solely on optimizing attention …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3607826
Publisher: IEEE

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A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique

A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique 150 150
Author(s): Sungjin Kim, Jeonghyun Lee, Yoonse Cho, Jintae Kim, Jaehyouk Choi, Heein Yoon

Abstract:

This letter presents a 7-bit pipelined subranging ADC that integrates a 3-bit flash ADC with a ring VCO-based quantizer. A resistor-ladder-based residue shifter (RLRS) replaces traditional residue amplifiers, efficiently shifting the residue voltage into the most linear region of the $K_{textrm {VCO}}$ , thereby eliminating the need for post-linearity calibration. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 177 – 180
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3578546
Publisher: IEEE

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