power amplifier (PA)

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A 100+Gb/s 252–283-GHz RF-Amplifier-Integrated TX/RX Chipset in Standard 65-nm Bulk CMOS

A 100+Gb/s 252–283-GHz RF-Amplifier-Integrated TX/RX Chipset in Standard 65-nm Bulk CMOS 150 150
Author(s): Zhicheng Lin, Hiu Lok Tam, Hao Guo, Xiaoyue Xia, Zijun Guo, Kam Man Shum, Pui-In Mak, Chi Hou Chan

Abstract:

This article presents a 252–283-GHz amplifier-last transmitter (TX) and amplifier-first receiver (RX) wireless front end in standard 65-nm bulk CMOS technology, targeting IEEE 802.15.3d/802.15.3-compliant high-speed point-to-point wireless communications. To overcome the challenges of limited transistor gain and high passive loss that often limit the implementation of J-band RF amplifiers, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3730962
Publisher: IEEE

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A Thermally Adaptive Ku-Band Array-Scalable Transmitter Incorporating VSWR-Resilient PA for Ground Terminal Phased-Array Applications

A Thermally Adaptive Ku-Band Array-Scalable Transmitter Incorporating VSWR-Resilient PA for Ground Terminal Phased-Array Applications 150 150
Author(s): Mohamed Eleraky, Alessandro Novello, Giorgio Cristiano, Basem Abdelaziz Abdelmagid, Yuqi Liu, Jianping Zeng, Jinglong Xu, Boce Lin, Jonas Nann, Hangxing Liu, Marco Saif, Niccolò Villaggi, Lavinia Recchioni, Tzu-Yuan Huang, Thomas Burger, Thomas Kleier, Hua Wang

Abstract:

This article presents an eight-channel dual-polarized Ku-band transmitter (Tx) beamformer integrated circuit (BFIC) fabricated in a 22-nm GlobalFoundries FDSOI process. Each channel integrates independent phase and gain control utilizing a 7-bit active phase shifter (PS) and a 5.5-bit attenuator (ATT). To mitigate performance degradation caused by load impedance variations in …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 19
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3727539
Publisher: IEEE

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Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer

Analysis and Design of Power Amplifier Using Parallel-Combined Multisegment Transformer 150 150
Author(s): Geuntae Kim, Hyunjin Ahn, Kyutaek Oh, Ilku Nam, Ockgoo Lee

Abstract:

This letter presents a highly efficient power amplifier (PA) using a parallel-combined vertical multisegment transformer for 5G new radio (NR) applications operating in bands n257 and n258, in a 65-nm bulk CMOS process. A multisegment transformer facilitates a lower provided input impedance than a conventional transformer, enabling the PA to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 85 – 88
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3665218
Publisher: IEEE

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A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150
Author(s): Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656477
Publisher: IEEE

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

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