MOSFET

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A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch
A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch 150 150
Author(s): Sheng-Hsi Hung, Tz-Wun Wang, Si-Yi Li, Wei-Chien Hung, Ya-Ting Hsu, Ke-Horng Chen, Kuo-Lin Zheng, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Abstract:

This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal–insulator–metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current ( $I_{mathrm{CM}})$ to improve …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3386880
Publisher: IEEE

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Sustainable Status Monitoring of MOSFETs in a Fully Integrated RF Amplifier by Thermal Voltage Sensing of On-Chip Thermopile
Sustainable Status Monitoring of MOSFETs in a Fully Integrated RF Amplifier by Thermal Voltage Sensing of On-Chip Thermopile 150 150
Author(s): Jian-Hua Li, Xiaoping Liao

Abstract:

In this letter, a sustainable status monitoring of MOSFETs in a fully integrated two stage RF amplifier by thermal voltage sensing of on-chip thermopile is implemented in 0.18- $\mu \text{m}$ CMOS technology. The designed micro-thermopile consists of many thermocouples electrically connected in series by Al and P-type polysilicon, which …

Published in: IEEE Solid-State Circuits Letters
Page(s): 94 – 97
Year of Publication: 2024
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3368634
Publisher: IEEE

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Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors
Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors 150 150
Author(s): Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson

Abstract:

We systematically fabricate devices and analyze data for vertical InAs/(In)GaAsSb nanowire tunnel field-effect transistors (TFETs), to study the influence of source dopant position and level on their device performance. The results show that delaying the introduction of dopants further in the GaAsSb source segments improved the transistor metrics (…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 8 – 12
Year of Publication: 2024
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2024.3355949
Publisher: IEEE

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HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism
HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism 150 150
Author(s): Qianqian Huang, Shaodi Xu, Ru Huang

Abstract:

Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 7
Year of Publication: 2024
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2023.3338480
Publisher: IEEE

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