Mathematical models

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Integrated Spatiotemporal Multiscale-Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices

Integrated Spatiotemporal Multiscale-Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices 150 150
Author(s): Ziyan Liao, Zhiheng Huang, Min Xiao, Yuezhong Meng, Hui Yan, Yang Liu

Abstract:

Resistive random access memory (RRAM) is a leading candidate for next-generation nonvolatile memory and neuromorphic computing. However, its performance is limited by inherent switching variability and uncertainties in spatiotemporal multiscale materials and processes. This study integrates multiphysics and multiscale modeling with uncertainty quantification (UQ) to systematically address these limitations and …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3633067
Publisher: IEEE

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A Multicore Programmable Variable-Precision Near-Memory Accelerator for CNN and Transformer Models

A Multicore Programmable Variable-Precision Near-Memory Accelerator for CNN and Transformer Models 150 150
Author(s): Yiming Yang, Yiyang Yuan, Xinghua Wang, Xiaoran Li, Hao Wu, Qihao Liu, Weiye Tang, Xiangqu Fu, Feng Zhang

Abstract:

Convolutional neural network (CNN) and transformer are the most popular neural network models in computer vision (CV) and natural language processing (NLP). It is quite common to use both these two models in multimodal scenarios, such as text-to-image generation. However, these two models have very different memory mappings, dataflows and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3624011
Publisher: IEEE

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A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management

A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management 150 150
Author(s): Hikmet Seha Öztürk, Julian Arenas, Carlos Tokunaga, Nasser Kurd, Visvesh S. Sathe

Abstract:

This article presents a fine-grained thermal sensing network for thermal management in SoCs. Sensor nodes in this network are made up of joint supply voltage ( $V_{\mathrm {dd}}$ ) and temperature ( $T$ ) sensors, which are compact and highly digital. Measurements from these simple but imperfect sensors are jointly processed to extract …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621280
Publisher: IEEE

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A SPICE-Compatible Compact Model of Ferroelectric Diode

A SPICE-Compatible Compact Model of Ferroelectric Diode 150 150
Author(s): Musaib Rafiq, Mohammad Sajid Nazir, Ateeb Naseer, Yogesh Singh Chauhan, Shubham Sahay

Abstract:

In this work, for the first time, we present a SPICE-compatible compact model of ferroelectric (FE) diodes to enable their design exploration for diverse applications, including memory and unconventional computing paradigms. We propose modified Schottky barrier and hopping models for capturing the on- and off-mode operations of the FE diode, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 166 – 170
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624212
Publisher: IEEE

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Integrating Atomistic Insights With Circuit Simulations via Transformer-Driven Symbolic Regression

Integrating Atomistic Insights With Circuit Simulations via Transformer-Driven Symbolic Regression 150 150
Author(s): Md Rahatul Islam Udoy, Jack Hutchins, Shamiul Alam, Catherine Schuman, Ahmedullah Aziz

Abstract:

This article introduces a framework that establishes a cohesive link between the first principles-based simulations and circuit-level analyses using a machine learning-based compact modeling platform. Starting with atomistic simulations, the framework examines the microscopic details of material behavior, forming the foundation for later stages. The generated datasets, with molecular insights, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 179 – 187
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624662
Publisher: IEEE

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Quantum Field Theory Model for Spin-Based Devices Using 2-D van der Waals Materials

Quantum Field Theory Model for Spin-Based Devices Using 2-D van der Waals Materials 150 150
Author(s): Axel I. Saenz Rodriguez, Oksana Ostroverkhova, Pallavi Dhagat

Abstract:

We explore the effects of layered geometries of 2-D quantum spin systems as a method to tune and control material properties for spintronic devices. We analyze the dispersion relation of a 2-D quantum spin system with a shifted bilayer square lattice through the linear spin wave (LSW) approximation of quantum …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 171 – 178
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624217
Publisher: IEEE

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An 8-Bit 400-MS/s 1-Then-2-Bit/Cycle SAR ADC With Comparator Rotation-Based Input-Independent Background Offset Calibration

An 8-Bit 400-MS/s 1-Then-2-Bit/Cycle SAR ADC With Comparator Rotation-Based Input-Independent Background Offset Calibration 150 150
Author(s): Changjoo Kim, Sooho Park, Yohan Choi, Minkyun Shim, Woojin Lee, Donghwi Seo, Chulwoo Kim

Abstract:

This letter presents an 8-bit 400 MS/s 1-then-2-bit/cycle successive approximation register (SAR) analog-to-digital converter (ADC) employing a comparator rotation-based background offset calibration (CRBC) technique. Unlike conventional 1-then-2-bit/cycle architectures, where calibration validity depends on the input voltage, the proposed comparator rotation-based background calibration enables input-independent background calibration, …

Published in: IEEE Solid-State Circuits Letters
Page(s): 345 – 348
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3624263
Publisher: IEEE

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An 800GbE PAM-4 PHY Transceiver for 42 dB Copper and Direct-Drive Optical Applications in 7 nm

An 800GbE PAM-4 PHY Transceiver for 42 dB Copper and Direct-Drive Optical Applications in 7 nm 150 150
Author(s): Chang Liu, Burak Catli, Yong Liu, Anand Vasani, Guansheng Li, Kun Chuai, Lakshmi Rao, Yang Liu, Xin Meng, Jiawen Zhang, Tim He, Batu Dayanik, Vadim Milirud, Meisam Honarvar Nazari, Hyo Gyuem Rhew, Derui Kong, Arvindh Iyer, Nan Wang, Alireza Nilchi, Aminghasem Safarian, Ray Wang, Hyung-Joon Jeon, Xiaochen Yang, Boyu Hu, Jerry Han, Adesh Garg, Kumar Thasari, Heng Zhang, Namik Kocaman, Ali Nazemi, Delong Cui, Afshin Momtaz, Jun Cao

Abstract:

This work presents a low power DSP-based single-chip 800GbE PAM-4 PHY transceiver in 7 nm process capable of driving eight lanes of up to 112-Gb/s. It supports both electrical and optical links with monolithic integrated laser driver enabling direct-drive PAM-4 output capability for EML and silicon photonics. The transceiver supports 42 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 281 – 284
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608134
Publisher: IEEE

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A 38.1 fJ/Bit Capacitive-Latch True Random Number Generator Featuring Both Autozeroed Inverter Mismatch and Accelerated Evaluation

A 38.1 fJ/Bit Capacitive-Latch True Random Number Generator Featuring Both Autozeroed Inverter Mismatch and Accelerated Evaluation 150 150
Author(s): Woojin Lee, Changmin Sim, Changjoo Kim, Jinwoo Jeon, Hyundo Jung, Taihyun Kim, Chulwoo Kim

Abstract:

This work presents a capacitive-latch (C-latch) true random number generator (TRNG) that achieves both inverter mismatch autozeroing and accelerated evaluation by utilizing coupling capacitors. The proposed C-latch TRNG samples the mismatch between inverter equalization voltages through coupling capacitors during the equalization phase, effectively autozeroing inverter mismatch and enabling high-entropy raw …

Published in: IEEE Solid-State Circuits Letters
Page(s): 265 – 268
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608187
Publisher: IEEE

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