Magnetic tunneling

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Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile One-Bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference

Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile One-Bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference 150 150
Author(s): Byeong-Gwon Kim, Byeong-Kwon Ju, Ki-Young Lee

Abstract:

Spin-transfer-torque magnetic random-access memory (STT-MRAM) is attractive for nonvolatile one-bit sign-weight storage, but a favorable cell or local-read metric does not establish subsystem efficiency. We analyze a hybrid magnetic tunnel junction (MTJ)–complementary metal-oxide-semiconductor (CMOS) memory subsystem in which MTJs store static signs while sensing, reference generation, sign staging, scale …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3726699
Publisher: IEEE

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A Compact XOR Gate Implemented With a Single Straintronic Magnetic Tunnel Junction

A Compact XOR Gate Implemented With a Single Straintronic Magnetic Tunnel Junction 150 150
Author(s): Supriyo Bandyopadhyay

Abstract:

The xor Boolean logic gate is widely used in many applications such as encryption (xor ciphers), binary addition (half- and full-adders), error detection (parity bits), etc., but is challenging to construct because of its demanding conditional dynamics. It typically requires multiple logic switches or other types of gates, which results …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 185 – 191
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3719208
Publisher: IEEE

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P-Dits for the Frequency Assignment Problem With Transmitter Deactivation in Dense Environments

P-Dits for the Frequency Assignment Problem With Transmitter Deactivation in Dense Environments 150 150
Author(s): Christian Duffee, Jordan Athas, Igor Kadota, Randall Berry, Pedram Khalili Amiri

Abstract:

The frequency assignment problem is a nondeterministic polynomial-time hard (NP-hard) optimization problem concerning the assignment of frequency channels to wireless transmitters. Typically, the aim is to minimize interference between transmitters while maintaining a high level of service. In this work, the use of probabilistic d-dimensional bits, or p-dits, for this …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 78 – 85
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3690563
Publisher: IEEE

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Design and Analysis of a Three-Stream STT-MTJ TRNG With XOR and Majority Voter Logic as Postprocessing Architectures

Design and Analysis of a Three-Stream STT-MTJ TRNG With XOR and Majority Voter Logic as Postprocessing Architectures 150 150
Author(s): M. Satwik Rai, Akshaja Kanugovi, Vinod Kumar Joshi

Abstract:

True random number generators (TRNGs) are critical for hardware security, providing unpredictable entropy for cryptographic applications. Spin-transfer torque magnetic tunnel junction (STT-MTJ) devices offer a promising entropy source due to their low-power consumption, nonvolatility, and stochastic switching behavior. This work presents an MTJ-based TRNG that produces three independent bit streams. …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 36 – 44
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3671608
Publisher: IEEE

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A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time

A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time 150 150
Author(s): Haris Suhail, Haoran He, Vinod Kurian Jacob, Jiyue Yang, Kang L. Wang, Sudhakar Pamarti

Abstract:

Memory performance has emerged as a critical factor influencing both system speed and energy efficiency. However, conventional memory technologies such as embedded Flash (eFlash) and static RAM (SRAM) encounter significant scalability limitations beyond the 28-nm CMOS node. Among novel emerging memory technologies, spin-transfer-torque magnetic RAM (STT-MRAM) has gained prominence due …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3609342
Publisher: IEEE

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Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices

Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices 150 150
Author(s): Masanori Natsui, Tomoo Yoshida, Takahiro Hanyu

Abstract:

This article proposes a circuit configuration for an area- and energy-efficient nonvolatile register using magnetic tunnel junction (MTJ) devices, suitable for persistent computation in intermittent computing environments. The proposed configuration, named the reference-load sharing scheme (RLSS), stores 1 bit of information using the resistance of a dedicated MTJ device and a …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 90 – 98
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3611365
Publisher: IEEE

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