Logic gates

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A 7056-PPI Pixel Circuit With Low-Leakage Structure for Active-Matrix Monochrome Micro-LED Displays

A 7056-PPI Pixel Circuit With Low-Leakage Structure for Active-Matrix Monochrome Micro-LED Displays 150 150
Author(s): Chih-Lung Lin, Cheng-Han Ke, Yu-Chang Chiu, Yuan-Yu Lai, Yi-Chien Chen, Cheng-Rui Lu, Yu-Hsiang Fu, Chih-Chuan Huang

Abstract:

This work presents a 5T2C pixel circuit for active-matrix (AM) micro-displays in near-eye display applications. The circuit supports monochrome micro light-emitting diode (micro-LED) displays with ultrahigh resolution of 7056 pixels per inch (PPI). The circuit is designed and fabricated based on medium-voltage (MV) devices from the 55-nm high-voltage (HV) CMOS …

Published in: IEEE Solid-State Circuits Letters
Page(s): 89 – 92
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3667520
Publisher: IEEE

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications

A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications 150 150
Author(s): Pei Qin, Junyu Wu, Taotao Xu, Yongchun Li, Wenjie Feng, Quan Xue, Wenquan Che

Abstract:

This article presents a reconfigurable dual-path dual-band low noise amplifier (LNA) for fifth generation (5G) millimeter-wave (mmW) communications. A novel band-switching input matching architecture based on the cross-connected transistors is proposed to achieve optimal dual-band input matching and $g_{m}$ -boosting. This architecture allows the dual-band input transistors to share …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3661593
Publisher: IEEE

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On-Chip Charge-Trap-Transistor-Based Mismatch Calibration of an 8-Bit Thermometer Current-Source DAC

On-Chip Charge-Trap-Transistor-Based Mismatch Calibration of an 8-Bit Thermometer Current-Source DAC 150 150
Author(s): Mohammadreza Zeinali, Sudhakar Pamarti

Abstract:

This letter presents an on-chip mismatch calibration technique for current-source digital-to-analog converters (DACs) using charge-trap transistors (CTTs) in 22-nm FDSOI technology. The proposed method exploits programmable threshold voltage (VTH) shifts in CTTs to locally tune the current of near-minimum-sized devices without external trimming. A compact 8-bit thermometer DAC is implemented …

Published in: IEEE Solid-State Circuits Letters
Page(s): 53 – 56
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3656261
Publisher: IEEE

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Side-Channel Attack-Resistant HMAC-SHA256 Accelerator With Boolean and Arithmetic Masking in Intel 4 CMOS

Side-Channel Attack-Resistant HMAC-SHA256 Accelerator With Boolean and Arithmetic Masking in Intel 4 CMOS 150 150
Author(s): Sachin Taneja, Vikram B. Suresh, Raghavan Kumar, Vivek De, Sanu K. Mathew

Abstract:

This work describes a side-channel attack (SCA)-resistant hash-based message authentication code (HMAC) accelerator with secure hash algorithm 2 (SHA-2) using Boolean and arithmetic masking along with the first-reported ASIC implementation in Intel 4 CMOS with 10 M measured traces. Previously reported masked datapath suffers from high area/performance overheads (>100%) designs due to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1026 – 1036
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3647096
Publisher: IEEE

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A 1×32 TDC Array With 0.056% Pixel-to-Pixel Variation Using a Global Timer Architecture for LiDAR Applications

A 1×32 TDC Array With 0.056% Pixel-to-Pixel Variation Using a Global Timer Architecture for LiDAR Applications 150 150
Author(s): Hsi-Hao Huang, Zong-Rui Cao, Ying-Ying Cheng, Jia-Yu Lin, Chen-Yi Lee

Abstract:

This letter presents a low pixel-to-pixel variation (PPV) time-to-digital converter (TDC) array designed for light detection and ranging (LiDAR) applications. The TDC array is implemented in a 0.18- $\mu $ m HV CMOS process, integrated with a single-photon avalanche diode (SPAD) array. SPAD-based LiDAR systems require high-precision timing resolution across the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 41 – 44
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652323
Publisher: IEEE

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A 0.015-mm2 0.5-V Synthesizable Hybrid PLL With Multi-Phase Linear Proportional-Gain Paths

A 0.015-mm2 0.5-V Synthesizable Hybrid PLL With Multi-Phase Linear Proportional-Gain Paths 150 150
Author(s): Qibang Sun, Liqun Feng, Woogeun Rhee, Hanjun Jiang

Abstract:

This brief presents a 0.015-mm2 0.5-V synthesizable hybrid phase locked loop (PLL). All blocks including an analog proportional-gain path can be logically or physically synthesized with digital cells and hardware languages. To mitigate the mismatch and common-mode fluctuation problems of a voltage-mode phase detector, multi-phase proportional-gain paths are designed for …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3649215
Publisher: IEEE

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A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC

A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC 150 150
Author(s): Vaidehi Garg, Jianwei Jia, Omkar Phadke, Shimeng Yu

Abstract:

Compute-in-memory (CIM) using emerging nonvolatile memory devices is a promising candidate for energy-efficient deep neural network (DNN) inference at the edge. Ferroelectric field-effect transistors (FeFETs) have recently gained attention as nonvolatile, CMOS-compatible devices with a higher on/off ratio and lower read and write energy compared to resistive random-access memory (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3640522
Publisher: IEEE

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A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions

A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions 150 150
Author(s): Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Judi Parvizinejad, Marco Bonkowski, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov

Abstract:

This article presents a cryo-BiCMOS system on chip (SoC) designed for single and two-qubit gate operations for quantum computers (QCs) based on beryllium trapped-ions (TIs). Signal generation from 0.7 to 1.6 GHz is supported, covering all microwave transitions in a ${}^{9}\text {Be}^{+}$ QC realization. An integrated 48-kbit waveform memory is implemented for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 673 – 689
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3632204
Publisher: IEEE

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