Logic gates

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FIMA: A Scalable Ferroelectric Compute-in-Memory Annealer for Accelerating Boolean Satisfiability

FIMA: A Scalable Ferroelectric Compute-in-Memory Annealer for Accelerating Boolean Satisfiability 150 150
Author(s): Mohammad Khairul Bashar, T. H. Pantha, Z. Li, M. Farasat, S. Datta, V. Narayanan, S. Dutta, N. Shukla

Abstract:

In-memory compute kernels present a promising approach for addressing data-centric workloads. However, their scalability—particularly for computationally intensive tasks solving combinatorial optimization problems such as Boolean satisfiability (SAT), which are inherently difficult to decompose—remains a significant challenge. In this work, we propose a ferroelectric nonvolatile memory (NVM)-based compute-in-memory …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 81 – 89
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3603942
Publisher: IEEE

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A 0-to- 10μF Off-Chip Output Capacitor-Scalable Boost Converter Achieving 96.68% Peak Efficiency

A 0-to- 10μF Off-Chip Output Capacitor-Scalable Boost Converter Achieving 96.68% Peak Efficiency 150 150
Author(s): Hyeon-Ji Choi, Joo-Mi Cho, Hyo-Jin Park, Seok-Jun Lee, Sung-Wan Hong

Abstract:

This letter presents an off-chip output capacitor (CO)-scalable (OCS) boost converter. The proposed OCS boost converter is possible to operate both with and without the off-chip CO. In addition, it operates in a whole conversion ratio (CR) range over 1 while maintaining a small current ripple of an inductor, resulting …

Published in: IEEE Solid-State Circuits Letters
Page(s): 233 – 236
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3594739
Publisher: IEEE

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Reconfigurable Ferroelectric Bandpass Filter With Low-Frequency Noise Analysis for Intracardiac Electrogram Monitoring

Reconfigurable Ferroelectric Bandpass Filter With Low-Frequency Noise Analysis for Intracardiac Electrogram Monitoring 150 150
Author(s): Jianwei Jia, Zhenge Jia, Omkar Phadke, Yiyu Shi, Shimeng Yu

Abstract:

Implantable cardioverter defibrillators (ICDs) provide real-time monitoring and immediate defibrillation for life-threatening arrhythmias. However, the intracardiac electrogram (IEGM) acquisition of ICDs faces stringent constraints, including power consumption, low-frequency noise, and patient-specific physiological variability. This article introduces an ultralow-power, high-resolution, reconfigurable three-stage bandpass filter designed specifically for IEGM, utilizing ferroelectric field-effect …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 67 – 73
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3584711
Publisher: IEEE

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A 10 to 40 GHz Reflection-Mode N-Path Filter

A 10 to 40 GHz Reflection-Mode N-Path Filter 150 150
Author(s): Cody J. Ellington, Sandeep Hari, Brian A. Floyd

Abstract:

A bandpass reflection-mode N-path filter (RMNF) with 2-GHz bandwidth and 10 to 40 GHz center-frequency tuning is presented. The design includes a broadband hybrid coupler, N-path reflectors, comprising four-phase passive mixers terminated with third-order in-phase and quadrature-phase active baseband loads, and a broadband clock-generation network. The reflectors realize an in-band open circuit …

Published in: IEEE Solid-State Circuits Letters
Page(s): 169 – 172
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3575536
Publisher: IEEE

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A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS

A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS 150 150
Author(s): Yu-Kai Chen, Yi-Fan Tseng, Wei-Zhe Su, Chun-Hsing Li

Abstract:

A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, effectively reducing gate resistance and drain-to-gate capacitance. This significantly enhances the transistor’s maximum oscillation frequency $f_{mathrm {max }}$ from 239.7 to 367.5 GHz. Furthermore, a $…

Published in: IEEE Solid-State Circuits Letters
Page(s): 165 – 168
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3574413
Publisher: IEEE

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CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability 150 150
Author(s): Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects. A rigorously calibrated TCAD model, validated against experimental CFET data, is employed to quantify the impact of metal gate granularity (MGG)-induced …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 51 – 59
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3568622
Publisher: IEEE

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Device Nonideality-Aware Compute-in-Memory Array Architecting: Direct Voltage Sensing, I–V Symmetric Bitcell, and Padding Array

Device Nonideality-Aware Compute-in-Memory Array Architecting: Direct Voltage Sensing, I–V Symmetric Bitcell, and Padding Array 150 150
Author(s): Jianzi Jin, Shifan Gao, Cimang Lu, Xiang Qiu, Yi Zhao

Abstract:

A voltage sensing compute-in-memory (CIM) architecture has been designed to improve the analog computing accuracy, and a chip on 90-nm flash platform has been successfully fabricated, with the bidirectional operation enabled by the symmetric bitcell structure. By padding the weight sum to a global value for all bit lines (BLs), …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 19 – 24
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3539470
Publisher: IEEE

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A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance

A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance 150 150
Author(s): Esteban Garzón, Eyal Rechef, Roman Golman, Odem Harel, Yuval Harary, Paz Snapir, Marco Lanuzza, Adam Teman, Leonid Yavits

Abstract:

The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3009 – 3019
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529715
Publisher: IEEE

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