Logic gates

  • No Comments

Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET

Impact of Aging, Self-Heating, and Parasitics Effects on NSFET and CFET 150 150
Author(s): Swati Deshwal, Sufia Shahin, Anirban Kar, Yogesh S. Chauhan, Hussam Amrouch

Abstract:

This work presents a comparative analysis of complementary field-effect transistor (CFET) and nanosheet FET (NSFET) architectures, with a focus on self-heating effects (SHEs), negative bias temperature instability (NBTI), hot carrier degradation (HCD), and the impact of back-end-of-line (BEOL) parasitics on standard cell performance. NBTI degradation is modeled using a framework …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 188 – 196
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624653
Publisher: IEEE

View on IEEE Xplore

  • No Comments

1.58-b FeFET-Based Ternary Neural Networks: Achieving Robust Compute-In-Memory With Weight-Input Transformations

1.58-b FeFET-Based Ternary Neural Networks: Achieving Robust Compute-In-Memory With Weight-Input Transformations 150 150
Author(s): Imtiaz Ahmed, Akul Malhotra, Revanth Koduru, Sumeet Kumar Gupta

Abstract:

Ternary weight neural networks (TWNs), with weights quantized to three states (−1, 0, and 1), have emerged as promising solutions for resource-constrained edge artificial intelligence (AI) platforms due to their high energy efficiency with acceptable inference accuracy. Further energy savings can be achieved with TWN accelerators utilizing techniques such as compute-in-memory (CiM) and …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 157 – 165
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3621160
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Non-Volatile ReRAM-Based Compact Event-Triggered Counters

Non-Volatile ReRAM-Based Compact Event-Triggered Counters 150 150
Author(s): Moin Diwan, Shengchao Zhang, Zidu Li, Alex James, Bhaskar Choubey

Abstract:

With an increasing number of transistors per circuit, the fabrication cost and the energy consumption of each integrated circuits increase exponentially, which drives the need to reduce the number of transistors. In this study, we explore a novel design for a 16-bit digital counter that utilizes a combination of complementary …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 131 – 138
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3619415
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories 150 150
Author(s): Jianze Wang, Wei Zhang, Xuanyao Fong

Abstract:

The ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While previous research has explored the impact of process variations at the device level, their effects on …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 123 – 130
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3616007
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Compact Current-Reusing 6-mW 66–92 GHz Frequency Quadrupler With 5% Peak Power Added Efficiency and >36 dBc Harmonic Rejection in 22-nm FDSOI CMOS

A Compact Current-Reusing 6-mW 66–92 GHz Frequency Quadrupler With 5% Peak Power Added Efficiency and >36 dBc Harmonic Rejection in 22-nm FDSOI CMOS 150 150
Author(s): Shankkar Balasubramanian, Kristof Vaesen, Piet Wambacq, Carsten Wulff

Abstract:

This letter presents a frequency quadrupler with 32% fractional bandwidth (66–92 GHz) and 5% peak power-added efficiency (PAE), capable of operating with an input power of 0 dBm. The quadrupler consisting of two cascaded frequency doublers uses a multiport driven push-push complementary architecture for the first stage to generate differential signals for the second …

Published in: IEEE Solid-State Circuits Letters
Page(s): 301 – 304
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3614381
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Fully-Dynamic Capacitive Touch Sensor With Tri-level Energy Recycling and Compressive Sensing Technique

A Fully-Dynamic Capacitive Touch Sensor With Tri-level Energy Recycling and Compressive Sensing Technique 150 150
Author(s): Xiangdong Feng, Zhiyu Wang, Haoyang Li, Jiaqing Li, Wei-Chin Lin, Xin Hu, Zhong Tang, Yuyan Liu, Qinwen Fan, Yuxuan Luo, Bo Zhao

Abstract:

Capacitive touch screens have become the dominant user interface over the past decade. Achieving high framerates with low power consumption remains a critical design goal for touch systems. The conventional charge-recycling technique reduces driving power by 64%, but it relies on off-chip capacitors. To address this issue, we propose a tri-level …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3612093
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation

Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation 150 150
Author(s): Aswin Undavalli, Kareem Rashed, Abdul Rakib Hossain, Gert Cauwenberghs, Shantanu Chakrabartty, Arun Natarajan, Aravind Nagulu

Abstract:

We present a fully analog, multiplier-free, sampled-domain RF correlator to achieve high energy efficiency for radar workloads. The RF correlator employs a split-source follower architecture that leverages the margin propagation (MP) computing paradigm in the sampled domain. As a proof of concept, we implement a $256 \times 256$ fully analog cross correlator …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602920
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 38.1 fJ/Bit Capacitive-Latch True Random Number Generator Featuring Both Autozeroed Inverter Mismatch and Accelerated Evaluation

A 38.1 fJ/Bit Capacitive-Latch True Random Number Generator Featuring Both Autozeroed Inverter Mismatch and Accelerated Evaluation 150 150
Author(s): Woojin Lee, Changmin Sim, Changjoo Kim, Jinwoo Jeon, Hyundo Jung, Taihyun Kim, Chulwoo Kim

Abstract:

This work presents a capacitive-latch (C-latch) true random number generator (TRNG) that achieves both inverter mismatch autozeroing and accelerated evaluation by utilizing coupling capacitors. The proposed C-latch TRNG samples the mismatch between inverter equalization voltages through coupling capacitors during the equalization phase, effectively autozeroing inverter mismatch and enabling high-entropy raw …

Published in: IEEE Solid-State Circuits Letters
Page(s): 265 – 268
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608187
Publisher: IEEE

View on IEEE Xplore

Search this website