Inverters

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Self-Heating and Parasitic Effects in Multi-Tier CFET Design

Self-Heating and Parasitic Effects in Multi-Tier CFET Design 150 150
Author(s): Sufia Shahin, Mahdi Benkhelifa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the four-tier complementary FET (CFET) design with the conventional two-tier CFET, using …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 153 – 158
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704373
Publisher: IEEE

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Building Minimum-Power Digital Circuits With Sub-Femtowatt Dynamic Leakage-Suppression Logic Standard Cells

Building Minimum-Power Digital Circuits With Sub-Femtowatt Dynamic Leakage-Suppression Logic Standard Cells 150 150
Author(s): Daniel S. Truesdell, Jacob Breiholz, Benton H. Calhoun

Abstract:

This article investigates dynamic leakage-suppression (DLS) logic for minimum-power operation in digital circuits. The DLS logic family uses a strong intrinsic subthreshold leakage reduction technique and is an emerging approach for computing applications that prioritize low active power at or beneath the nW-level. We analytically model the key operating characteristics …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3709741
Publisher: IEEE

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A 0.1514-pJ/bit 18-Gb/s/wire Run-Length-Tolerant Transition-Driven AC-Coupled Transceiver for Die-to-Die Interfaces

A 0.1514-pJ/bit 18-Gb/s/wire Run-Length-Tolerant Transition-Driven AC-Coupled Transceiver for Die-to-Die Interfaces 150 150
Author(s): Jun-Cheol Lee, Joo-Hyung Chae

Abstract:

This article presents a transition-driven AC-coupled transceiver (TRX) optimized for low-power and compact die-to-die (D2D) interfaces. To address the limitations of conventional PMOS- and transimpedance-amplifier (TIA)-based receivers (RXs), the proposed RX architecture employs a small 130-fF coupling capacitor to capture only transition information, eliminating the need for bulky …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3708634
Publisher: IEEE

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A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces

A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces 150 150
Author(s): Changmin Sim, Seongcheol Kim, Seungwoo Park, Junseob So, Hwaseok Shin, Taehwan Kim, Seon-Been Lee, Minkyun Shim, Chulwoo Kim

Abstract:

This article presents a 27-Gb/s/pin inverter-based delay-matched three-level pulse amplitude modulation (PAM-3) transceiver for short-reach die-to-die (D2D) interfaces. The proposed design uses two parallel, identical offset-programmable transimpedance amplifiers (TIAs) to independently generate two finely tunable PAM-3 reference levels with minimal parasitic loading, enabling multi-level signaling within a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3706449
Publisher: IEEE

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A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier 150 150
Author(s): Yihang Cheng, Yihan Zhang, Huaqiang Wu, Sining Pan

Abstract:

This letter presents an energy-efficient dynamic amplifier. It utilizes source-coupled input boosting and time-domain differential sampling techniques to boost the effective input signal by $4\times $ compared to its floating inverter amplifier (FIA) prototype without noise or power penalties. With discharge-based dynamic biasing, the bandwidth (BW) and power of the amplifier …

Published in: IEEE Solid-State Circuits Letters
Page(s): 93 – 96
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668876
Publisher: IEEE

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A 0.5–2.5-GS/s Resettable Ring-VCO-Based ADC Eliminating Quantization-Noise Shaping

A 0.5–2.5-GS/s Resettable Ring-VCO-Based ADC Eliminating Quantization-Noise Shaping 150 150
Author(s): Tao Lu, Zixiang Liu, Hao Yang, Sai-Weng Sin, Fujiang Lin, Liheng Lou, Robert Bogdan Staszewski, Yizhe Hu

Abstract:

This article presents a Nyquist-rate Analog-to-digital converter (ADC) operating from 0.5 to 2.5 GS/s based on an open-loop resettable ring VCO (R-RVCO). By inherently embedding the $1 {\,}-{\,}z^{-1}$ transfer function, the R-RVCO eliminates the need for an explicit differentiator, suppresses VCO phase-noise (PN) integration, and avoids quantization-noise (QN) shaping within …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3668599
Publisher: IEEE

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A Low Jitter and Low Spur Fractional-N Digital PLL Based on a DTC Chopping Technique

A Low Jitter and Low Spur Fractional-N Digital PLL Based on a DTC Chopping Technique 150 150
Author(s): Riccardo Moleri, Simone M. Dartizio, Michele Rossoni, Giacomo Castoro, Francesco Tesolin, Dmytro Cherniak, Carlo Samori, Andrea L. Lacaita, Salvatore Levantino

Abstract:

This work presents a digital-to-time converter (DTC)-based fractional-N digital phase-locked loop (PLL) designed to achieve simultaneously low jitter and low spurs. We introduce a novel DTC chopping technique that effectively mitigates fractional spurs, which we identify as predominantly arising from even-order nonlinearity invariable-slope (VS) DTCs. The proposed technique suppresses …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663074
Publisher: IEEE

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A 94-fs Jitter and −249.3-dB FoM MDLL With Background Calibration of Injection Phase and Slew-Rate Mismatch

A 94-fs Jitter and −249.3-dB FoM MDLL With Background Calibration of Injection Phase and Slew-Rate Mismatch 150 150
Author(s): Dongjun Park, Jae-Yoon Sim, Seon-Kyoo Lee

Abstract:

This article presents a ring oscillator (RO)-based multiplying delay-locked loop (MDLL) that incorporates a dual-background calibration scheme to compensate for both injection phase and slew-rate mismatches. The MDLL employs the proposed frequency/slew-rate detector (FSD) to distinguish both mismatch types by comparing the pulse widths of consecutive output clock …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3648361
Publisher: IEEE

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A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology

A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology 150 150
Author(s): Saroj Satapathy, Amlan Ghosh, John Riley, Jalal Quadri, Jaydeep Kulkarni, Feroze Merchant

Abstract:

Advanced CMOS memory requires voltage biasing assist techniques to achieve low operating voltages (Vmin), which must be deactivated at higher voltages for high electric field reliability. Centralized power management unit (PMU) control signals face timing synchronization and process tracking challenges when distributed across cores to activate assist circuits in various …

Published in: IEEE Solid-State Circuits Letters
Page(s): 37 – 40
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652110
Publisher: IEEE

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