Integrated circuits

PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC

PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC 150 150

Abstract:

Compute-in-memory (CiM) accelerators perform matrix vector multiplications (MVMs) directly inside memory arrays, reducing data movement and improving both energy efficiency and throughput for artificial intelligence (AI) workloads. To reduce the number of conversions, recent designs use multibit compute cells. Nevertheless, practical multibit CiM still faces a tension among accuracy, efficiency, …

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A Reconfigurable Multimode Readout IC for Nonconductive and Capacitive Sensing With 33.9-dB SNR on 6.5-in AMOLED Panels

A Reconfigurable Multimode Readout IC for Nonconductive and Capacitive Sensing With 33.9-dB SNR on 6.5-in AMOLED Panels 150 150

Abstract:

This letter presents a multimode readout IC for 6.5-in 34Tx/16Rx on-cell touch AMOLED (OCTA) panels, detecting both conductive and nonconductive objects (NCos) without panel modifications. To enable this dual detection, a reconfigurable analog front-end (AFE) is proposed, functioning as either a capacitance-to-voltage converter or a triboelectric charge sampler. In …

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A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture

A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture 150 150

Abstract:

Hybrid computation-in-memory (CIM) architecture has emerged as the most promising alternative to overcome the drawbacks of the conventional CMOS-only devices used in the conventional von-Neumann architecture. In the hybrid CIM architecture, a pair of perpendicular magnetic tunnel junctions (pMTJs) is used to store one bit of information. Though there are …

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A 54- $\\mu$ W Design-Agnostic Clock, Voltage, and EM-Pulse Fault-Injection Attack Detection Using Time-to-Voltage Conversion

A 54- $\\mu$ W Design-Agnostic Clock, Voltage, and EM-Pulse Fault-Injection Attack Detection Using Time-to-Voltage Conversion 150 150

Abstract:

This article presents a state-of-the-art design-agnostic clock, voltage, and electromagnetic pulse (EMP)-based fault-injection attack (FIA) detector. The efficient conversion of time-to-voltage information by integrating amplifiers transforms the time anomaly into the voltage domain, enabling its detection at a lower power consumption. The clock-glitch detector design consumes only $53~\mu $ W …

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A Fully-Integrated Wireless Ingestible CMOS Drug-Delivery Chip With Electrochemical Energy Harvesting and pH-Adaptive MPPT for Personalized Therapeutics

A Fully-Integrated Wireless Ingestible CMOS Drug-Delivery Chip With Electrochemical Energy Harvesting and pH-Adaptive MPPT for Personalized Therapeutics 150 150

Abstract:

The rapid growth of personalized medicine has driven increased demand for battery-free, energy-efficient ingestible electronics for on-demand gastrointestinal (GI) drug delivery. This article presents the first fully-integrated, battery-free ingestible CMOS platform that harvests energy from a galvanic cell (GC) through a reconfigurable switched-capacitor converter, with pH-adaptive maximum power point tracking (…

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An Area and Power Efficient Source Driver IC With Multi-Line Sensing Real-Time Pixel Compensation for OLED Displays

An Area and Power Efficient Source Driver IC With Multi-Line Sensing Real-Time Pixel Compensation for OLED Displays 150 150

Abstract:

This article proposes a source driver integrated circuit (SD-IC) with a pixel compensator designed to minimize both silicon area and power consumption for organic light-emitting diode (OLED) displays. The proposed SD-IC is capable of driving ultrahigh-definition (UHD) active-matrix OLED (AMOLED) panels with a one-horizontal-time (1-H time) of $7.2~\mu $ s while …

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Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI 150 150

Abstract:

We present a monolithically integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the deep Nwell (DNW)/P-type substrate (PSUB) $({\lt }5~ \mathrm {GHz})$ and the P-Well $(\mathrm {PW}) / \mathrm {DNW}({\gt }1~ \mathrm {GHz})$ junctions. The presented combination of bulk PD and 22 nm fully-depleted silicon-on-insulator (FDSOI) …

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