A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8935a7dcd6741d8e23d45bb15c1470a8?s=96&d=mm&r=g
Abstract:
This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal–insulator–metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current ( $I_{mathrm{CM}})$ to improve …