Gain

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A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS

A W-Band Active Bidirectional Phase Shifter With 2° RMS Phase Error Over 26.4% FBW Using Back-Gate Biasing in 28-nm FD-SOI CMOS 150 150
Author(s): Sungwon Kwon, Byung-Wook Min

Abstract:

This article presents a W-band active bidirectional vector-sum phase shifter (Bi-VSPS) using a bidirectional phase-inverting variable-gain amplifier (Bi-PIVGA) with back-gate biasing in 28-nm fully depleted silicon-on-insulator (FD-SOI) CMOS. The Bi-PIVGA employs a neutralization technique that cancels the gate-to-drain capacitances of both active and inactive transistors in each signal direction. By …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3699765
Publisher: IEEE

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An Incremental Noise-Shaping Pipeline ADC With Single-Amplification-Based kT/C Noise Cancellation Technique

An Incremental Noise-Shaping Pipeline ADC With Single-Amplification-Based kT/C Noise Cancellation Technique 150 150
Author(s): Zongnan Wang, Bingrui Li, Jiajun Tang, Zhongyi Wu, Haoyang Luo, Yuan Wang, Xiyuan Tang

Abstract:

This article presents an incremental noise-shaping (NS) pipeline analog-to-digital converter (ADC) featuring a single-amplification-based kT/C noise cancellation technique. By pre-amplifying the frontend sampling kT/C noise onto the capacitive digital-to-analog converter (CDAC) of the backend NS successive approximation register (SAR) quantizer, the proposed architecture eliminates the repeated amplifications typically …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698875
Publisher: IEEE

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A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI

A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI 150 150
Author(s): Haisu Ju, Yingtao Zou, Gabriel M. Rebeiz

Abstract:

This article presents a 6.3–18.4GHz in-phase and quadrature (I/Q) direct down-conversion receiver featuring reconfigurability in both the radio frequency (RF) and local oscillator (LO) paths. The receiver comprises a multi-band reconfigurable RF front-end, double-balanced passive I/Q mixers, an I/Q LO generation network with a tunable I/Q …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698025
Publisher: IEEE

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A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control

A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control 150 150
Author(s): Dongfan Xu, Minzhe Tang, Haiyun Gu, Yuxuan Liu, Yilun Chen, Ziyuan Ren, Minghao Fan, Daxu Zhang, Yi Zhang, Duo Li, Zheng Li, Zezheng Liu, Chun Wang, Yudai Yamazaki, Yuncheng Zhang, Kazuaki Kunihiro, Hiroyuki Sakai, Atsushi Shirane, Kenichi Okada

Abstract:

This article presents a time-modulated variable-gain amplifier (VGA) employing a clock-sampling topology governed by a duty-cycle control (DCC) loop. By modulating the effective operation time of the amplifier rather than altering its RF bias conditions, for precise tuning of the clock duty cycle, enabling phase consistency at millimeter-wave frequencies. The …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3695362
Publisher: IEEE

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A 6.9-ppm/°C, 0.66-mV/V Line Regulation, 50-mA Multi-Loop Low-Dropout Regulator With Integrated Single-BJT Voltage and Current References

A 6.9-ppm/°C, 0.66-mV/V Line Regulation, 50-mA Multi-Loop Low-Dropout Regulator With Integrated Single-BJT Voltage and Current References 150 150
Author(s): Raghav Bansal, Shouri Chatterjee

Abstract:

This article presents a fully integrated output-capacitor-less (OCL) multi-feedback-loop low-dropout regulator (LDO) with an in-built single bipolar junction transistor (BJT)-based voltage and current reference (VCR) for energy-harvesting Internet of Things (IoT) devices. The proposed architecture comprises four loops, which significantly enhance the DC regulation and transient performance of the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3694415
Publisher: IEEE

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A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity

A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and ±0.8% Local Gain Non-Uniformity 150 150
Author(s): Feng Cheng, Jianlin Xia, Encheng Zhu, Long Zhang, Zhongyuan Fang, Xiaofeng Sun, Dejin Wang, Shaoping Li, Jing Zhu, Yongjia Li, Weifeng Sun

Abstract:

This article proposes a hybrid magnetic current sensor achieving a 15-MHz bandwidth within a compact 2.7-mm2 area. To mitigate the pole–zero mismatch inherent in the two-stage integrator topology, a dual-output Gm-C integrator with subtractor-based compensation is proposed, achieving a ±0.8% local gain non-uniformity. A wideband feedforward ripple suppression scheme cancels …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3692476
Publisher: IEEE

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A 77-dB DR Two-Stage SAR ADC for Low-Gain Analog Front-Ends Using Asynchronous Pipelining and RC Snubber Reference Stabilization

A 77-dB DR Two-Stage SAR ADC for Low-Gain Analog Front-Ends Using Asynchronous Pipelining and RC Snubber Reference Stabilization 150 150
Author(s): Jun Feng, Rares Bodnar, Roberto Maurino, Marcel J. M. Pelgrom, Filip Tavernier

Abstract:

The analog front-end (AFE) often bottlenecks the power of modern receiver chains, burdened by the large-signal linearity required before the ADC. This work introduces a 77-dB DR, 200-MS/s two-stage SAR ADC that can alleviate much of this burden by offering a significantly lower input-referred noise (IRN) to enable low-gain …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3686660
Publisher: IEEE

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A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier 150 150
Author(s): Yihang Cheng, Yihan Zhang, Huaqiang Wu, Sining Pan

Abstract:

This letter presents an energy-efficient dynamic amplifier. It utilizes source-coupled input boosting and time-domain differential sampling techniques to boost the effective input signal by $4\times $ compared to its floating inverter amplifier (FIA) prototype without noise or power penalties. With discharge-based dynamic biasing, the bandwidth (BW) and power of the amplifier …

Published in: IEEE Solid-State Circuits Letters
Page(s): 93 – 96
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668876
Publisher: IEEE

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A Noise-Shaping SAR-Based ExG Sensing Frontend With Dynamic Input-Impedance Boosting and Prediction-Assisted Mismatch-Shaping DEM

A Noise-Shaping SAR-Based ExG Sensing Frontend With Dynamic Input-Impedance Boosting and Prediction-Assisted Mismatch-Shaping DEM 150 150
Author(s): Yiming Han, Linran Zhao, Yaoyao Jia

Abstract:

This article presents a noise-shaping successive approximation register (NS-SAR)-based direct-digitizing electrophysiological (ExG) sensing frontend (SFE) fabricated in a standard 180-nm CMOS process. To address the challenges of large motion artifacts and high electrode–tissue impedance (ETI), we propose three key innovations in our proposed SFE that enable accurate ExG …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3674986
Publisher: IEEE

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