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A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS

A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS 150 150
Author(s): Yu-Kai Chen, Yi-Fan Tseng, Wei-Zhe Su, Chun-Hsing Li

Abstract:

A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, effectively reducing gate resistance and drain-to-gate capacitance. This significantly enhances the transistor’s maximum oscillation frequency $f_{mathrm {max }}$ from 239.7 to 367.5 GHz. Furthermore, a $…

Published in: IEEE Solid-State Circuits Letters
Page(s): 165 – 168
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3574413
Publisher: IEEE

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Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields 150 150
Author(s): Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

Abstract:

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with …

Published in: IEEE Solid-State Circuits Letters
Page(s): 161 – 164
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3573757
Publisher: IEEE

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A 430- μ A 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control

A 430- μ A 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control 150 150
Author(s): Jiaqi Dong, Qi Zhang, Xinwen Zhang, Yekan Chen, Yili Shen, Bo Zhao, Yuxuan Luo

Abstract:

This article introduces a high-acoustic-dynamic-range and low-power digital microphone based on the electrostatic force feedback control (EFFC). The proposed design adjusts the sensitivity of the micro-electro-mechanical system (MEMS) by adaptively biasing it at different input amplitudes, thereby extending the dynamic range (DR). The proposed adaptive biasing technique allows the induced …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1199 – 1209
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3531509
Publisher: IEEE

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