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Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation

Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation 150 150
Author(s): Hao Yu, Zhaojing Fu, Lianbo Liu, Qiang Zhou, Taiyun Chi, Sensen Li

Abstract:

This article introduces Doherty active load modulation into low-noise amplifier (LNA) designs to dynamically enhance linearity. Under nominal small-signal conditions, the proposed LNA operates like conventional counterparts, consuming no additional power. When strong in-band blockers are present, auxiliary paths are adaptively engaged to activate a high-linearity mode without incurring a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667125
Publisher: IEEE

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A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier 150 150
Author(s): Yihang Cheng, Yihan Zhang, Huaqiang Wu, Sining Pan

Abstract:

This letter presents an energy-efficient dynamic amplifier. It utilizes source-coupled input boosting and time-domain differential sampling techniques to boost the effective input signal by $4\times $ compared to its floating inverter amplifier (FIA) prototype without noise or power penalties. With discharge-based dynamic biasing, the bandwidth (BW) and power of the amplifier …

Published in: IEEE Solid-State Circuits Letters
Page(s): 93 – 96
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668876
Publisher: IEEE

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A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150
Author(s): Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656477
Publisher: IEEE

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A Ring-Oscillator-Based Digital Harmonic-Mixing Fractional-N PLL

A Ring-Oscillator-Based Digital Harmonic-Mixing Fractional-N PLL 150 150
Author(s): Hongyu Lu, Nader Fathy, Patrick P. Mercier

Abstract:

This letter presents a low-jitter digital harmonic-mixing fractional- $N$ phase-locked loop (PLL) using a ring oscillator. To extend the loop bandwidth, a mixer with unity gain in the phase domain is adopted, which helps suppress phase noise of the phase detector and delta-sigma modulator. Furthermore, to reduce mixing harmonics that …

Published in: IEEE Solid-State Circuits Letters
Page(s): 57 – 60
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3654239
Publisher: IEEE

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A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS

A 4 × 224 Gb/s Single-Ended PAM-4 Transceiver Front-End With Noise Suppression Technique and Cascaded Equalizers in 130-nm SiGe BiCMOS 150 150
Author(s): Xiongshi Luo, Xuewei You, Zhenghao Li, Hongzhi Wu, Yangyi Zhang, Fuzhan Chen, Xuxu Cheng, Wentao Zhou, Quan Pan

Abstract:

A dc-coupled analog single-ended (SE) transceiver (TRX) front-end supporting 224 Gb/s/lane is presented. It features SE-to-differential (S2D) and differential-to-SE (D2S) conversion, power-efficient broadband analog equalization, and noise suppression. Both the transmitter and receiver front-ends adopt pseudodifferential structures with dual-loop regulators to achieve a high power supply rejection …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644437
Publisher: IEEE

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

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BASS-PLL: A Bandwidth Augmented Sub-Sampling PLL Achieving a Wide Bandwidth Above 30% of the Reference Frequency and a Worst Case FoMREF of −247.9 dB at 3 GHz With a Ring Oscillator

BASS-PLL: A Bandwidth Augmented Sub-Sampling PLL Achieving a Wide Bandwidth Above 30% of the Reference Frequency and a Worst Case FoMREF of −247.9 dB at 3 GHz With a Ring Oscillator 150 150
Author(s): Tong Zhang, Yiwen Zhang, Xueke Cai, Weihao Jie, Yanling Zheng, Deyong Li, Yang Zhao, Yongfu Li, Honglan Jiang, Patrick P. Mercier, Hui Wang

Abstract:

This work presents a bandwidth augmented sub-sampling phase-locked loop (BASS-PLL) architecture that features simultaneous out-of-band noise suppression by direct and multipath sampling of the ring oscillator’s (ROs) output and in-band noise suppression via an intrinsic sub-sampling mechanism, ultimately combining the benefits of over-sampling PLLs (OS-PLLs) and sub-sampling PLLs (SS-PLLs) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3640726
Publisher: IEEE

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A 1.54-pJ/b 64-Gb/s 16-QAM Intradyne Coherent Optical Receiver in 28-nm CMOS

A 1.54-pJ/b 64-Gb/s 16-QAM Intradyne Coherent Optical Receiver in 28-nm CMOS 150 150
Author(s): Ahmed E. Abdelrahman, Mohamed Badr Younis, Mohamed Osama Selim, Mohamed Saad Aly, Mahmoud A. Khalil, Pavan Kumar Hanumolu

Abstract:

The rapid growth of data-intensive applications in modern data centers is driving demand for scalable, high-speed, and energy-efficient optical interconnects. Traditional noncoherent modulation schemes, such as pulse amplitude modulation (PAM), are reaching their scalability limits at higher data rates, making coherent detection increasingly attractive due to its higher spectral efficiency. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 20 – 32
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3635729
Publisher: IEEE

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A 112-Gb/s PAM4 Receiver With a Phase Equalization AFE in 7-nm FinFET

A 112-Gb/s PAM4 Receiver With a Phase Equalization AFE in 7-nm FinFET 150 150
Author(s): Huanan Guo, Yufeng Yao, Xiang Gao

Abstract:

To reduce the bit-error-rate (BER), equalizers are implemented in high-speed SerDes receivers (RX) to compensate for channel insertion loss and mitigate intersymbol interference (ISI). Conventional analog front-end (AFE) designs primarily focus on amplitude gain while neglecting the influence of phase shift. This brief presents a phase equalization (PEQ) AFE design …

Published in: IEEE Solid-State Circuits Letters
Page(s): 5 – 8
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3637833
Publisher: IEEE

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