Delays

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A 9-GHz Digital Fractional-N PLL With Dynamic-Threshold DTC

A 9-GHz Digital Fractional-N PLL With Dynamic-Threshold DTC 150 150
Author(s): Daxu Zhang, Yuncheng Zhang, Zezheng Liu, Yuang Xiong, Wenqian Wang, Duo Li, Minzhe Tang, Dongfan Xu, Dingxin Xu, Kazuaki Kunihiro, Hiroyuki Sakai, Kenichi Okada

Abstract:

This letter presents a fractional-N digital phase-locked loop (DPLL) employing a dynamic-threshold digital-to-time converter (DT-DTC). By dynamically adjusting the comparator threshold voltage, the proposed DT-DTC mitigates delay nonlinearity without digital predistortion (DPD). A quadrature-VCO (QVCO) generates quadrature phases for a multiphase clock generator (MPCG). The QVCO-based MPCG with skew calibration …

Published in: IEEE Solid-State Circuits Letters
Page(s): 250 – 253
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3725284
Publisher: IEEE

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Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multitier CFET SRAM

Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multitier CFET SRAM 150 150
Author(s): Yutian Zhang, Jiaquan Fang, Khawar Sarfraz, Mansun Chan

Abstract:

This work shows that a multitier complementary FET (CFET) static random access memory (SRAM) can decouple the area term from PPA-oriented transistor sizing. A topology-aware layout design is used to construct orthogonal and point-symmetric multitier CFET SRAM cells under 1-nm-class design rules, enabling high-density (HD), high-performance (HP), and high-current (HC) …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 159 – 166
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3709007
Publisher: IEEE

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An Eight-Channel Direct Analog Sensor Fusion Core for On-the-Spot Time-Series Analysis in Edge AI

An Eight-Channel Direct Analog Sensor Fusion Core for On-the-Spot Time-Series Analysis in Edge AI 150 150
Author(s): Jia-le Cui, Yasuko Matsubara, Yasushi Sakurai, Noriyuki Miura

Abstract:

A time-series analysis on multi-channel sensor signals is critical for wide-range Artificial Intelligence (AI) applications, such as in a field of mobility, robot, and infrastructure monitoring. Edge-device data collection followed by cloud-based analysis suffers from high latency and power consumption. This article presents an edge-AI-oriented sensor fusion architecture, performing analog …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3726487
Publisher: IEEE

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A Tunable RF Self-Interference Canceller With Highly Accelerated, Machine-Learning-Based Adaptation for Full-Duplex Radio Applications

A Tunable RF Self-Interference Canceller With Highly Accelerated, Machine-Learning-Based Adaptation for Full-Duplex Radio Applications 150 150
Author(s): Xichen Li, Ahmed Refaat Aboulsaad, Elpida Karapepera, Yi-Hsiang Huang, Po-Hao Cheng, Charles Chien, Jacques Christophe Rudell

Abstract:

Future full-duplex (FD) radio systems require highly tunable self-interference (SI) cancellers with rapid adaptation to mitigate dynamic SI profiles in wireless environments. This article presents a 2.4-GHz RF SI canceller chip with extensive tuning capabilities that operates with a machine-learning (ML)-augmented adaptation loop for FD transceivers. The proposed design …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3715631
Publisher: IEEE

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A 108-Gb/s PAM-8 CTLE + FFE Receiver Front-End With 1.4-Vppd Input Range in 28-nm CMOS

A 108-Gb/s PAM-8 CTLE + FFE Receiver Front-End With 1.4-Vppd Input Range in 28-nm CMOS 150 150
Author(s): Sangwan Lee, Heedo Jeong, Hanhee Jo, Hwanseok Jung, Jaeduk Han

Abstract:

This article presents a 108-Gb/s 8-level pulse amplitude modulation (PAM-8) receiver front-end capable of handling a wide input dynamic range to overcome the signal-to-noise ratio (SNR) versus linearity tradeoff in higher-order modulation schemes. The proposed architecture employs a multi-path continuous-time linear equalizer (CTLE) with a bias-shifting technique, which splits …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3713392
Publisher: IEEE

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An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization

An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization 150 150
Author(s): Minchang Kim, Hankyu Chi, Sooncheol Kwon, Icsu Oh, Seulgi Kim, Heewoong Song, Daeho Yun, Jaehong Jeong, Daejoon Kim, Kichul Hong, Jeonghyun Park, Woo-Seok Choi, Hae-Kang Jung, Hoyoung Son, Inchul Jeong, Hyungsoo Kim, Jonghwan Kim

Abstract:

This letter presents a simultaneous bidirectional (SBD) transceiver for post HBM4. It is difficult to increase the data rate due to poor channel characteristics of the silicon interposer and the limited physical area of the IO in high-bandwidth memory (HBM) interface. SBD signaling is attractive because it doubles the per-pin …

Published in: IEEE Solid-State Circuits Letters
Page(s): 182 – 185
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3696268
Publisher: IEEE

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A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces

A 27-Gb/s/pin Inverter-Based Delay-Matched PAM-3 Transceiver With Pattern-Selective Switching Jitter Compensation for Die-to-Die Interfaces 150 150
Author(s): Changmin Sim, Seongcheol Kim, Seungwoo Park, Junseob So, Hwaseok Shin, Taehwan Kim, Seon-Been Lee, Minkyun Shim, Chulwoo Kim

Abstract:

This article presents a 27-Gb/s/pin inverter-based delay-matched three-level pulse amplitude modulation (PAM-3) transceiver for short-reach die-to-die (D2D) interfaces. The proposed design uses two parallel, identical offset-programmable transimpedance amplifiers (TIAs) to independently generate two finely tunable PAM-3 reference levels with minimal parasitic loading, enabling multi-level signaling within a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3706449
Publisher: IEEE

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A 0.38-pJ/step Pulse-Width Locked Time-Domain Wheatstone Bridge Sensor Readout IC for LIG-Based Wearable Strain Sensing System

A 0.38-pJ/step Pulse-Width Locked Time-Domain Wheatstone Bridge Sensor Readout IC for LIG-Based Wearable Strain Sensing System 150 150
Author(s): Siyuan Xu, Longhuang Li, Yiyang Du, Huiru Yang, Huaiyu Ye, Huan Hu

Abstract:

This article presents a pulse-width locked-loop (PWLL) time-domain readout integrated circuit (IC) for wearable strain-sensing systems based on a laser-induced graphene (LIG) strain sensor. A time-domain Wheatstone bridge (WhB) architecture is proposed, incorporating a duty-cycled resistor (DCR) and a voltage-controlled oscillator (VCO)-based integrator to realize a digitally intensive, energy-efficient, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3704204
Publisher: IEEE

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A Self-Injection LC Oscillator for Flicker Noise Reduction

A Self-Injection LC Oscillator for Flicker Noise Reduction 150 150
Author(s): Bahram Jafari, Ali Ghafari, Sankaran Aniruddhan, Shahriar Mirabbasi, Sudip Shekhar

Abstract:

Self-injection has been used in lasers and photonic integrated circuits to reduce the laser’s phase noise (PN). We show that self-injection can be leveraged in GHz LC oscillators as well. Our oscillator employs a current-domain self-injection technique by leveraging second-harmonic extraction, capacitive phase shifting, and self-mixing through the oscillator’…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 816 – 829
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643322
Publisher: IEEE

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