Couplings

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A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI
A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI 150 150
Author(s): Jian Zhang, Dawei Wang, Wei Zhu, Ming Zhai, Xiangjie Yi, Yan Wang

Abstract:

This letter presents a Ka-band mutual coupling resilient stacked-FET power amplifier (PA) in 45-nm CMOS silicon on insulator. Two sub-PAs with triple-stacked-FET to increase output-power (Pout) are combined through a quadrature hybrid coupler to keep robust and high performance in the scenario of mutual coupling among the phased-array antennas. A …

Published in: IEEE Solid-State Circuits Letters
Page(s): 147 – 150
Year of Publication: 2024
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3386676
Publisher: IEEE

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A 50–67-GHz Transformer-Based Six-Port Balanced-to-Unbalanced Quadrature Hybrid Coupler
A 50–67-GHz Transformer-Based Six-Port Balanced-to-Unbalanced Quadrature Hybrid Coupler 150 150
Author(s): Yang Gao, Howard C. Luong

Abstract:

This letter presents the first on-chip transformer-based six-port balanced-to-unbalanced quadrature hybrid coupler (QHBC). The proposed six-port QHBC employs three transformers to replace eight inductors design in conventional LC-based couplers for miniaturization. Fabricated in CMOS 28 nm, the overall size of the proposed coupler is 0.23 mm $\times0.17$ mm, which is equivalent to $0.046\…

Published in: IEEE Solid-State Circuits Letters
Page(s): 139 – 142
Year of Publication: 2024
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3381811
Publisher: IEEE

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