Calibration

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A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic

A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic 150 150
Author(s): Guo Wei, Rui Zhang, Fule Li, Hanjun Jiang, Zhihua Wang

Abstract:

This letter presents a 12-bit, 180-MS/s pipelined-SAR ADC in 65-nm CMOS. To eliminate the complex interstage gain-error calibration for a fast-response characteristic, a high-gain residue amplifier (RA) featuring a two-stage gain-boosting architecture is proposed. By removing the tail current, the RA significantly alleviates slew-rate and voltage headroom limitations. The …

Published in: IEEE Solid-State Circuits Letters
Page(s): 186 – 189
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697220
Publisher: IEEE

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A 4-GS/s 53.5-dB SNDR 12.9 fJ/conv. TI-SAR ADC with Capacitive Nonlinearity Compensation and Dual-Mode Offset Calibration

A 4-GS/s 53.5-dB SNDR 12.9 fJ/conv. TI-SAR ADC with Capacitive Nonlinearity Compensation and Dual-Mode Offset Calibration 150 150
Author(s): Jiazhen Ni, Dayi Zhou, Minqing Cai, Chen Chen, Xiang Gao, Seung-Chul Lee

Abstract:

Successive approximation register (SAR) analog-to-digital converters (ADCs) often employ dual-mode dynamic comparators to achieve both high speed and low noise. However, under low-supply operation, offset drift from mode transitions and degraded front-end linearity due to limited signal headroom become critical challenges. To address these issues, an adaptive current-injection scheme suppresses …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3713349
Publisher: IEEE

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A Low-Spur Fractional-N DPLL With Analog Pre-Distortion DTC Implementing Second-/Third-Order Calibration

A Low-Spur Fractional-N DPLL With Analog Pre-Distortion DTC Implementing Second-/Third-Order Calibration 150 150
Author(s): Daxu Zhang, Yuncheng Zhang, Dingxin Xu, Hongye Huang, Waleed Madany, Zezheng Liu, Wenqian Wang, Yuang Xiong, Ashbir Aviat Fadila, Duo Li, Minzhe Tang, Dongfan Xu, Atsushi Shirane, Kenichi Okada

Abstract:

This article presents a low-spur, low-jitter fractional-N digital phase-locked loop (DPLL) employing an analog pre-distortion digital-to-time converter (APD-DTC) to suppress fractional spurs by compensating for both second- and third-order nonlinearities without using complex digital pre-distortion. To support background calibration, a spur-level detection scheme using phase detector gain (PDG) is proposed …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3706350
Publisher: IEEE

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150
Author(s): Runzhou Chen, Hao-Yu Chien, Boxun Yan, Chao-Jen Tien, Mau-Chung Frank Chang

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1776 – 1790
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644224
Publisher: IEEE

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A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology 150 150
Author(s): Mu Wu, Yihang Cheng, Xingli Cui, Sining Pan, Huaqiang Wu

Abstract:

This letter presents an energy-efficient RC discharge-based sensor readout circuit for sub-kilo-ohm resistance measurements. An SAR logic is implemented to adjust the DAC capacitor array to equalize the RC time constants of the resistance-sensing and DAC branches, thereby eliminating the high static current required to bias the small sensing resistor. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 109 – 112
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3677301
Publisher: IEEE

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A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS

A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS 150 150
Author(s): Chenghao Zhang, Maliang Liu, Yuan Chang, Yihang Yang, Jinhai Xiao, Yintang Yang, Yong Chen

Abstract:

This article reports a 40-GS/s 8-bit time-interleaved (TI) time-domain (TD) gated-ring-oscillator analog-to-digital converter (GRO-ADC). An interleaving number of 32 is achieved with a single-channel 8-bit GRO-ADC operating at 1.25 GS/s, leading to a low front-end design complexity compared to recently published arts. The sampling front end employs a linearity-enhanced boosted …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1907 – 1920
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671459
Publisher: IEEE

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Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK

Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK 150 150
Author(s): Yingjie Li, Yifei Zhang, Haichuan Lin, Cheng Wang

Abstract:

Millions of quantum-bits (qubits) are envisioned for a fault-tolerant quantum computer. For scalability, silicon spin qubit stands out due to its compatibility with advanced CMOS processes. Silicon single-electron transistors (SETs) are widely adopted for the quantum state discrimination of spin qubits. For high-fidelity quantum logic gate and readout, the gate …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671795
Publisher: IEEE

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A Wideband Digitally Assisted Frequency Tripler With Adaptively Optimized Output Power in 55-nm SiGe BiCMOS

A Wideband Digitally Assisted Frequency Tripler With Adaptively Optimized Output Power in 55-nm SiGe BiCMOS 150 150
Author(s): Daniele Lodi Rizzini, Francesco Tesolin, Michele Rossoni, Riccardo Moleri, Filippo Osio, Andrea Mazzanti, Andrea L. Lacaita, Simone M. Dartizio, Salvatore Levantino

Abstract:

This article presents a 28–38-GHz frequency tripler implemented in 55-nm SiGe BiCMOS technology with a novel on-chip background calibration technique. This technique continuously optimizes the circuit performance by maximizing output power and improving fundamental harmonic rejection. The proposed tripler achieves wideband operation and robust performance across varying operating conditions and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1844 – 1859
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3666591
Publisher: IEEE

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A 23.4–42.1-GHz Fractional-N Synthesizer With ADC-Based Direct Phase Digitization

A 23.4–42.1-GHz Fractional-N Synthesizer With ADC-Based Direct Phase Digitization 150 150
Author(s): Hao Xu, Yizhuo Wang, Ziyang Jiao, Guoyu Li, Yiyun Mao, Shuai Liu, Yan Liu, Jimiao Sang, Qi Guo, Long Kong, Na Yan

Abstract:

A fractional-N digital phase-locked loop employs a novel analog-to-digital converter (ADC)-based phase detector (PD) to achieve direct phase digitization, thereby eliminating the need for a digital-to-time converter (DTC). The high PD gain reduces in-band phase noise, while its high linearity enables all-digital $\Sigma \Delta $ quantization noise cancellation. Implemented with …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671094
Publisher: IEEE

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