Analog-to-digital converter (ADC)

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An Incremental Noise-Shaping Pipeline ADC With Single-Amplification-Based kT/C Noise Cancellation Technique

An Incremental Noise-Shaping Pipeline ADC With Single-Amplification-Based kT/C Noise Cancellation Technique 150 150
Author(s): Zongnan Wang, Bingrui Li, Jiajun Tang, Zhongyi Wu, Haoyang Luo, Yuan Wang, Xiyuan Tang

Abstract:

This article presents an incremental noise-shaping (NS) pipeline analog-to-digital converter (ADC) featuring a single-amplification-based kT/C noise cancellation technique. By pre-amplifying the frontend sampling kT/C noise onto the capacitive digital-to-analog converter (CDAC) of the backend NS successive approximation register (SAR) quantizer, the proposed architecture eliminates the repeated amplifications typically …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698875
Publisher: IEEE

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A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input

A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input 150 150
Author(s): Hongzhi Liang, Jun Chang, Yixiao Luo, Li Dang, Haolin Han, Yi Shen, Dengquan Li, Shubin Liu, Ruixue Ding, Zhangming Zhu

Abstract:

This article presents a 32-GS/s 16-channel hierarchical time-interleaved (TI) hybrid analog-to-digital converter (ADC). The prototype utilizes the intrinsic high-speed quantization of time-domain (TD) ADC to reduce the interleaving factor. By incorporating hierarchical sampling and a cascode sampler, the compact TI-ADC achieves 44.3-dB spurious-free dynamic range (SFDR) at 20.9-GHz input. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680919
Publisher: IEEE

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An 800-MS/s 13-b 2× TI Pipelined-SAR ADC With Rapid Digital Amplification

An 800-MS/s 13-b 2× TI Pipelined-SAR ADC With Rapid Digital Amplification 150 150
Author(s): Peizhe Li, Danfeng Zhai, Qi Liu, Chixiao Chen

Abstract:

This work proposes a rapid digital amplification (RDA) with residue-aware reference, offering an equivalent open-loop (OL) gain enhancement of 25 dB and reducing the interstage gain error (ISGE)-induced SNR degradation by 20 dB, with an extra amplification latency of only 200 ps. It is implemented in an 800-MS/s 13-b two-way time-interleaved (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 137 – 140
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3684735
Publisher: IEEE

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A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS

A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS 150 150
Author(s): Chenghao Zhang, Maliang Liu, Yuan Chang, Yihang Yang, Jinhai Xiao, Yintang Yang, Yong Chen

Abstract:

This article reports a 40-GS/s 8-bit time-interleaved (TI) time-domain (TD) gated-ring-oscillator analog-to-digital converter (GRO-ADC). An interleaving number of 32 is achieved with a single-channel 8-bit GRO-ADC operating at 1.25 GS/s, leading to a low front-end design complexity compared to recently published arts. The sampling front end employs a linearity-enhanced boosted …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1907 – 1920
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3671459
Publisher: IEEE

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A 14-nm Nonvolatile-Volatile-Fused Compute-In-Memory Macro Based on Logic-Compatible Flash for Plastic Neural Networks

A 14-nm Nonvolatile-Volatile-Fused Compute-In-Memory Macro Based on Logic-Compatible Flash for Plastic Neural Networks 150 150
Author(s): Weizeng Li, Linfang Wang, Zhidao Zhou, Zhi Li, Wang Ye, Junyu Zhu, Junzhe Shen, Bohan Wang, Hanghang Gao, Hongyang Hu, Jing Liu, Jinshan Yue, Jianguo Yang, Qing Luo, Qi Liu, Chunmeng Dou, Yang Chai, Ming Liu

Abstract:

Designing computing-in-memory (CIM) chips with synaptic plasticity can potentially support energy-efficient on-chip learning in edge devices for rapid local task adaptation. Its silicon implementation is challenging as it requires hybridizing nonvolatile and volatile memory (VM) and customized computational operations. In this work, we propose a plastic CIM (P-CIM) macro featuring: 1) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3652940
Publisher: IEEE

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An 11.95-ENOB 560-MS/s Amplifier-Switching Subranging Analog-to-Digital Converter With Multi-Threshold Comparators

An 11.95-ENOB 560-MS/s Amplifier-Switching Subranging Analog-to-Digital Converter With Multi-Threshold Comparators 150 150
Author(s): Ritaro Takenaka, Tetsuya Iizuka

Abstract:

This article proposes a 14-bit, 560-MS/s subranging analog-to-digital converter (ADC) that employs an amplifier-switching architecture with multi-threshold comparators. The proposed amplifier-switching architecture reuses a flash quantizer multiple times during subranging conversion by amplifying the residue voltage with an appropriate gain at each quantization step. This approach reduces the required …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3647024
Publisher: IEEE

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A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery

A 32-Channel 85.4 dB SNDR Time-Multiplexed Neural Recording Front-End Achieving Within-Conversion Artifact Recovery 150 150
Author(s): Arindam Mandal, Chi-Hsiang Huang, Julian Arenas, Wei-En Lee, Kevin D. Patino-Sosa, Philip Anschutz, Amanda Jacob, Keshav Ramachandra, Samuel Sober, Muhannad S. Bakir, Shaolan Li, Visvesh S. Sathe

Abstract:

This article presents a 32-channel time-multiplexed highly digital neural recording front-end (RFE) that exhibits sub- $8.8~\mu $ s recovery latency from large stimulation artifacts while delivering high-resolution data at the Nyquist rate. The RFE is time-shared across 32 channels for low-frequency electrocorticography (ECoG) recording and across four channels for high-frequency action potentials (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1053 – 1067
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3643367
Publisher: IEEE

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A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques

A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques 150 150
Author(s): Qiang Yu, Zheng Zhu, Lulu Zhang, Qin Huang, Yao Feng, Chao Liang, Biao Hu, Ling Du, Rongbin Yang, Shuangyi Wu, Qiang Li

Abstract:

This letter presents a 14-bit 500-MS/s 3-stage pipelined successive approximation register (SAR) analog-to-digital converter (ADC). By exploiting robust 2b/cycle SAR ADCs, this ADC incorporates significant voltage and time redundancy. High SFDR is achieved through several linearity enhancement techniques. First, a DAC splitting technique addresses the common-mode voltage matching …

Published in: IEEE Solid-State Circuits Letters
Page(s): 9 – 12
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3639322
Publisher: IEEE

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A Calibration-Free Pipelined-SAR ADC With Cross-Stage Gain-Mismatch Error Shaping and Inherent Noise Shaping

A Calibration-Free Pipelined-SAR ADC With Cross-Stage Gain-Mismatch Error Shaping and Inherent Noise Shaping 150 150
Author(s): Jihang Gao, Yaohui Luan, Siyuan Ye, Jiajia Cui, Xinhang Xu, Linxiao Shen

Abstract:

This article presents a calibration-free pipelined-successive-approximation-register (SAR) analog-to-digital converter (ADC) based on the proposed cross-stage gain-mismatch-error shaping (CS-GMES) mechanism. The CS-GMES is realized by including the entire 2nd stage into MES operation to unify the gain error and the 2nd-stage mismatch error. A feedback capacitor provides cross-stage connection and mismatch …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3624412
Publisher: IEEE

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