IEEE Journal of Solid-State Circuits (JSSC)
Aims and Scope
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuit modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
Membership in SSCS includes online access to the monthly Journal of Solid-State Circuits through IEEE Xplore. Use your IEEE Web account when you are asked to log-on. The JSSC is the most downloaded periodical IEEE hosts.
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Information for Authors:
- "How to write a JSSC paper" presentation by Bram Nauta.
Introducing Overlength Page Charges
The Society Board has decided to implement overlength page charges to maintain the competitive and financial health of the Journal of Solid-State Circuits. The continued success of the Journal serves our technical community and keeps our flagship publication competitive within the IEEE family
Starting with papers submitted after October 1st, 2018, the SSCS will hence apply mandatory overlength page charges. This is irrespective of the page limits applied during submission, hence also applies to manuscripts that have obtained an exception for overlength submission. Charges are assessed when galley proofs are prepared, which is the last step before final publication in the Journal. Note that this could be slightly different from the formatting used by the authors during submission. If a manuscript exceeds ten pages in length, a mandatory overlength charge of $185 per page is applied beginning at the 11th page. The page will not include the last page of the paper if the last page consists only of reference and bios. Exceptions on this must be discussed with the Editor-in-Chief.
JSSC Papers on IEEE Xplore:
- IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Guest Editorial Special Section on the 45th IEEE European Solid-State Circuits Conference (ESSCIRC)
- A Single-Chip Bidirectional Neural Interface With High-Voltage Stimulation and Adaptive Artifact Cancellation in Standard CMOS
- A 128 128 SPAD Motion-Triggered Time-of-Flight Image Sensor With In-Pixel Histogram and Column-Parallel Vision Processor
- 1310/1550 nm Optical Receivers With Schottky Photodiode in Bulk CMOS
- Low-Power Highly Selective Channel Filtering Using a TransconductorCapacitor Analog FIR
- A 64-Channel Transmit Beamformer With 30-V Bipolar High-Voltage Pulsers for Catheter-Based Ultrasound Probes
- A 4-GS/s 39.9-dB SNDR 11.7-mW Hybrid Voltage-Time Two-Step ADC With Feedforward Ring Oscillator-Based TDCs
- Analysis and Design of a 260-MHz RF Bandwidth 22-dBm OOB-IIP3 Mixer-First Receiver With Third-Order Current-Mode Filtering TIA
- A Cellular Multiband DTC-Based Digital Polar Transmitter With 153-dBc/Hz Noise in 14-nm FinFET
- A 19.5-GHz 28-nm Class-C CMOS VCO, With a Reasonably Rigorous Result on 1/
fNoise Upconversion Caused by Short-Channel Effects
- Analysis of a 28-nm CMOS Fast-Lock Bang-Bang Digital PLL With 220-fs RMS Jitter for Millimeter-Wave Communication
- A 50112-Gb/s PAM-4 Transmitter With a Fractional-Spaced FFE in 65-nm CMOS
- An 8.93 TOPS/W LSTM Recurrent Neural Network Accelerator Featuring Hierarchical Coarse-Grain Sparsity for On-Device Speech Recognition
- C3SRAM: An In-Memory-Computing SRAM Macro Based on Robust Capacitive Coupling Computing Mechanism
- An All-Digital,
- High-Rejection RF Code Domain Receivers for Simultaneous Transmit and Receive Applications
- A Fully Integrated Programmable 6.08.5-GHz UWB IR Transmitter Front-End for Energy-Harvesting Devices
- Analog I/Q FIR Filter in 55-nm SiGe BiCMOS for 16-QAM Optical Communications at 112 Gb/s
- An iPWM Line-Coding-Based Wireline Transceiver With Clock -Domain Encoding for Compensating Up To 27-dB Loss While Operating at 0.5-to-0.9 V and 3-to-16 Gb/s in 65-nm CMOS
- Correction to "A CMOS Voltage Reference"
- Correction To "Physical Modeling Of Lateral Scaling In Bipolar Transistors"
- Design of an amplitude-stable sine-wave oscillator
- Correction to "high-Q Hf microelectromechanical filters"
- Authors' Reply
- Correction to "Minimum Propagation Delays in VLSI"
- Addition to "Evaluation of three 32-bit CMOS" adders in DCVS logic for self-timed circuits"
- Leak-compensated analog memory with pair mosfets
- CMOS analog front end of a transceiver with digital echo cancellation for ISDN
- Microwave CMOS-device physics and design
- Silicon-gate CMOS frequency divider for electronic wrist watch
- Correction to “A 2 Gb/s Throughput CMOS Transceiver Chipset With In-Package Antenna for 60 GHz Short-Range Wireless Communication”
- A CMOS VLSI chip for filtering of TV pictures in two dimensions
- A CMOS 0.8-/spl mu/m transistor-only 1.63-MHz switched-current bandpass /spl Sigma//spl Delta/ modulator for AM signal A/D conversion
- VLSI in consumer electronics
- Authors' Response [to comments on "On the self-generation of electrical soliton pulses"]
- MOVE Architecture in Digital Controllers
- A fully integrated CMOS DCS-1800 frequency synthesizer
- Automated hierarchical CMOS analog circuit stack generation with intramodule connectivity and matching considerations
- Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon as Semi-Insulating Substrate