Publications
SSCS proudly sponsors six top-notch publications as complimentary member benefits in print and electronic formats. The IEEE Journal of Solid-State Circuits (JSSC) - historically one of the top-five downloaded technical journals on IEEE Xplore - is available on-line and in print. The electronic-only Solid-State Circuits Letters (SSC-L) is a brief format companion to the JSSC that offers fast turnaround to authors for the latest innovations in our field. The IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (JxCDC) - an open-access monthly accessible free of charge via IEEE Xplore - offers researchers a journal to publish and extend their research results with supplementary technical materials. Our newest open-access journal, IEEE Open Journal of Solid-State Circuits launches in Fall 2020.
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Shanthi Pavan Vice President of Publications |
Members also receive the IEEE Solid-State Circuits Magazine free of charge (in print and on-line), which is a tutorial-level quarterly featuring pioneering breakthroughs, trending topics, and “who’s who” reports about IC community leaders and international, regional, and local award recipients. Other electronic-only publications are the RFIC Virtual Journal, a one-stop, curated compilation of RFIC papers within the publications library of the IEEE, and IEEE Design & Test Magazine, which offers insight into models, methods and tools for microelectronic systems.
- IEEE JOURNAL OF SOLID-STATE CIRCUITS
- New Associate Editors
- Guest Editorial Introduction to the Special Section on the 2020 IEEE BCICTS Conference
- 1-to-4 Analog Demultiplexer With up to 128 GS/s for Interleaving of Bandwidth-Limited Digitizers in Wireline and Optical Receivers
- Resolution-Related Design Considerations for a 120-GS/s 8-bit 2:1 Analog Multiplexer in SiGe-BiCMOS Technology
Ku -Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz- First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth
- A 123-dBm Sensitivity Split-Channel BFSK Reconfigurable Data/Wake-Up Receiver for Low-Power Wide-Area Networks
- A 2.5-nW Radio Platform With an Internal Wake-Up Receiver for Smart Contact Lens Using a Single Loop Antenna
- A Fully Dynamic Low-Power Wideband Time-Interleaved Noise-Shaping SAR ADC
- A 28-nm 10-b 2.2-GS/s 18.2-mW Relative-Prime Time-Interleaved Sub-Ranging SAR ADC With On-Chip Background Skew Calibration
- A 0.35-V 5,200-m2 2.1-MHz Temperature-Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted
RC Network and a Dual-Path Comparator - A Time Amplifier Assisted Frequency-to-Digital Converter Based Digital Fractional-
N PLL - A Dual-Mode Continuously Scalable-Conversion-Ratio SC Energy Harvesting Interface With SC-Based PFM MPPT and Flying Capacitor Sharing Scheme
- A Dual-Frequency Thermal Energy Harvesting Interface With Real-Time-Calculation ZCD
- A Scalable Multiphase Current-Mode Buck Controller With Sub-Milliohm DCR Current Sensing and Synchronized Overcurrent Protection
- A Hybrid Single-Inductor Bipolar-Output DCDC Converter With Floating Negative Output for AMOLED Displays
- A Single-Stage Dual-Output Regulating Rectifier With Hysteretic Current-Wave Modulation
- 0.51-V, 90400-mA, Modular, Distributed, 3 3 Digital LDOs Based on Event-Driven Control and Domino Sampling and Regulation
- A 16-Gb/s -11.6-dBm OMA Sensitivity 0.7-pJ/bit Optical Receiver in 65-nm CMOS Enabled by Duobinary Sampling
- Ferroelectric Field-Effect Transistor-Based 3-D NAND Architecture for Energy-Efficient on-Chip Training Accelerator
- Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
- Differential Electrically Insulated Magnetoelectric Spin-Orbit Logic Circuits
See more issues of IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
- Staff list
- [Contributors]
- Welcome to the Summer 2021 Issue of ! [Editors Note]
- Accomplishments During a Challenging Time [Presidents Corner]
- The Design of a Low-Voltage Bandgap Reference [The Analog Mind]
- AC Coupling and Baseline Wander [Circuit Intuitions]
- Stupid FET Tricks: The Zero-Gain Amplifier [Shop Talk: What You Didnt Learn in School]
- Silicon Photonics: A brief tutorial
- Ultralow-Power Receivers: Overcoming Battery Limitations to Facilitate Self-Powered Operation
- Fifty Nifty Variations of Two-Transistor Circuits: A tribute to the versatility of MOSFETs
- SSCS University of Texas at Dallas Student Chapter [Chapters]
- SSCS Beijing Chapter Organizes Distinguished Lecture Seminars [Chapters]
- SSCS Hong Kong Student Chapter Holds Series of Lectures [Chapters]
- Online Data Converter Course Sets New Record [Chapters]
- Topics on Microelectronics Online Courses at the University of Milan-Bicocca (Italy) Draw Large Participation [Chapters]
- IEEE SSCS/Photonics Society Joint PES Institute of Technology Bangalore Student Chapter Holds Virtual Events [Chapters]
- IEEE Electron Devices Society (EDS)/Solid-State Circuits Society (SSCS) Joint Serbia and Montenegro Chapter and EDS/SSCS University of Nis Student Branch Chapter Recent Activities [Chapters]
- IEEE SSCS Distinguished Lecturer Makoto Nagata Gives Talk at Switzerland Chapter [Chapters]
- SSCS-USTC Student Branch Chapter Hosts Series of Lectures [Chapters]
- Dr. Venu Bhagavatula Visits IEEE SSCS Utah Chapter [Chapters]
Aims & Scope - This new electronic publication provides relevant references pertaining to RFIC technology, paired with value-added editorial commentary from technology experts. The RFIC Virtual Journal aims to be the leading focal point on radio frequency integrated circuits from a worldwide perspective by collecting and disseminating knowledge on theory; enabling technologies, design methodologies, fabrication, testing of radio frequency integrated circuits, and systems; and determining which process signals to be transmitted or received through wireless communication.
To access this journal content have your IEEE Xplore login information ready and click here.
- Editorial Welcome to the New Editor-in-Chief
- A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process
- 10-nm SRAM Design Using Gate-Modulated Self-Collapse Write-Assist Enabling 175-mV
V MIN Reduction With Negligible Active Power Overhead - A 9-bit, 45 mW, 0.05 mm2 Source-Series-Terminated DAC Driver With Echo Canceller in 22-nm CMOS for In-Vehicle Communication
- A 40-nm Ultra-Low Leakage Voltage-Stacked SRAM for Intelligent IoT Sensors
- High Slew-Rate Quadruple-Voltage Mixed-Quenching Active-Resetting Circuit for SPADs in 0.35-
m CMOS for Increasing PDP