IEEE Solid-State Circuits Letters

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A 4-GS/s 53.5-dB SNDR 12.9 fJ/conv. TI-SAR ADC With Capacitive Nonlinearity Compensation and Dual-Mode Offset Calibration

A 4-GS/s 53.5-dB SNDR 12.9 fJ/conv. TI-SAR ADC With Capacitive Nonlinearity Compensation and Dual-Mode Offset Calibration 150 150
Author(s): Jiazhen Ni, Dayi Zhou, Minqing Cai, Chen Chen, Xiang Gao, Seung-Chul Lee

Abstract:

Successive approximation register (SAR) analog-to-digital converters (ADCs) often employ dual-mode dynamic comparators to achieve both high speed and low noise. However, under low-supply operation, offset drift from mode transitions and degraded front-end linearity due to limited signal headroom become critical challenges. To address these issues, an adaptive current-injection scheme suppresses …

Published in: IEEE Solid-State Circuits Letters
Page(s): 214 – 217
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3713349
Publisher: IEEE

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A Sampling PLL With Boosted Phase Detection Gain Achieving 52 fs RMS Jitter and 110.4 MHz Lock-In Range

A Sampling PLL With Boosted Phase Detection Gain Achieving 52 fs RMS Jitter and 110.4 MHz Lock-In Range 150 150
Author(s): Hyogyoung An, Changmin An, Sungjin Kim, Heein Yoon

Abstract:

This work presents a sampling phase-locked loop (SPLL) that simultaneously achieves sub-sampling SPLL (SSPLL)-level jitter and wide lock-in range ( $f_{\mathbf {lock}}$ ) inherent to SPLL architecture. By employing a high phase detection gain, the proposed SPLL ensures low in-band phase noise (PN) dominated by reference, while maintaining robust re-locking …

Published in: IEEE Solid-State Circuits Letters
Page(s): 202 – 205
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3710778
Publisher: IEEE

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A 6-bit Serializer With Integrated Manchester Encoder Using Flexible a-IGZO TFT Technology

A 6-bit Serializer With Integrated Manchester Encoder Using Flexible a-IGZO TFT Technology 150 150
Author(s): Suyash Shrivastava, Pydi Ganga Bahubalindruni

Abstract:

This article presents an experimental characterization of a novel 6-bit parallel-to-serial data converter integrated with a Manchester encoder. The system comprises an on-chip digital logic block that generates six mutually nonoverlapping control signals ( $\phi _{0-5}$ ) and three 120° phase-shifted clock signals to drive the switching transistors in the serializer and the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 194 – 197
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3707465
Publisher: IEEE

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A 58.9–73.7-GHz Quadrature Dual-Core Class-F₃,₅ Oscillator With Tail-Assisted Implicit Quintupling

A 58.9–73.7-GHz Quadrature Dual-Core Class-F₃,₅ Oscillator With Tail-Assisted Implicit Quintupling 150 150
Author(s): Yevhenii Mormul, Patchara Sawakewang, Sayan Kumar, Chawin Khongprasongsiri, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

We introduce a new class-F3,5 oscillator topology that enables quadrature operation by duplicating a conventional class-F3 oscillator core and electromagnetically coupling the two cores through a pair of additional coils feeding source terminals of the $g_{m}$ transistors. The coupling network enhances the fifth-harmonic component, enabling efficient extraction and quadrature …

Published in: IEEE Solid-State Circuits Letters
Page(s): 198 – 201
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3699799
Publisher: IEEE

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An IEEE802.15.4a/z/ab Compatible IR-UWB 2TRX With Full-Duplex Radar Sensing and Aliasing Suppressing Semisynchronous TX

An IEEE802.15.4a/z/ab Compatible IR-UWB 2TRX With Full-Duplex Radar Sensing and Aliasing Suppressing Semisynchronous TX 150 150
Author(s): Anoop Narayan Bhat, Erwin Allebes, Elbert Bechthum, Zule Xu, Stan van der Ven, Mohieddine El Soussi, Johan van Den Heuvel, Paul van Zeijl, Paul Mateman, Murat Eskiyerli, Stefano Traferro, Amirashkan Farsaei, Evgenii Tiurin, Sahan Gamage, Pepijn Boer, Igor Petrov, Jochem Govers, Huib Visser, Martijn Hijdra, Sharada Prasad Shantharam, Ivo Marques, Gururaja Kasanadi Ramachandra, Kaijie Ding, Ran Li, Aasish Boora, Peter Vis, Mario Konijnenburg, Arjan Breeschoten, Peng Zhang, Yao-Hong Liu, Christian Bachmann

Abstract:

This letter presents an 802.15.4ab/a/z compatible IR-UWB 2TRX highlighting a full-duplex-based radar, a semisynchronous TX and TRX’s digital baseband. A capacitive tuning technique proposed in the electrical balance duplexer (EBD)-based duplex RF front-end (RF-FE) improves TX-antenna insertion loss by 1.4 dB and the sensitivity of TX–RX …

Published in: IEEE Solid-State Circuits Letters
Page(s): 190 – 193
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697493
Publisher: IEEE

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A 194.6-TOPS/W Pipelined All Current-Domain Mixed-Signal Compute in Memory in 28-nm CMOS

A 194.6-TOPS/W Pipelined All Current-Domain Mixed-Signal Compute in Memory in 28-nm CMOS 150 150
Author(s): Saideep Cherukuri, N. V. Kidambi, W. C. Wang, I. Chakraborty, S. Zhang, L. Shamieh, J. B. Steinberg, S. Mukhopadhyay

Abstract:

Mixed-signal CIM (MS-CIM) faces bit-cell nonlinearity, poor linearity at high frequency, and throughput limits. We present a hybrid pipelined current-domain MS-CIM macro featuring bit-cell matched linearization interface (BMLI) and loop-unrolled successive approximation refinement (SAR) ADC fabricated in 28-nm CMOS. A $256{\,}\times {\,}256$ SRAM array with 8-bit inputs, 8-bit weights achieve 10.16-TOPS …

Published in: IEEE Solid-State Circuits Letters
Page(s): 174 – 177
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697990
Publisher: IEEE

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A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic

A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic 150 150
Author(s): Guo Wei, Rui Zhang, Fule Li, Hanjun Jiang, Zhihua Wang

Abstract:

This letter presents a 12-bit, 180-MS/s pipelined-SAR ADC in 65-nm CMOS. To eliminate the complex interstage gain-error calibration for a fast-response characteristic, a high-gain residue amplifier (RA) featuring a two-stage gain-boosting architecture is proposed. By removing the tail current, the RA significantly alleviates slew-rate and voltage headroom limitations. The …

Published in: IEEE Solid-State Circuits Letters
Page(s): 186 – 189
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697220
Publisher: IEEE

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A Zero-Static-Power ADC With Integrated Dynamic Reference and Driver-Free Operation Achieving 58.6 dB SNDR From –40 °C to 85 °C

A Zero-Static-Power ADC With Integrated Dynamic Reference and Driver-Free Operation Achieving 58.6 dB SNDR From –40 °C to 85 °C 150 150
Author(s): Yiming Wang, Yihang Luan, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents a 10-bit ENOB charge-sharing SAR ADC with a fully integrated dynamic bandgap reference (BGR), enabling first-order noise shaping and ultralow-power (ULP) operation. The charge-sharing ADC and dynamic BGR form an ideal pair: both operate without static current, allowing compact integration and high precision. The SAR uses only …

Published in: IEEE Solid-State Circuits Letters
Page(s): 178 – 181
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697203
Publisher: IEEE

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An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization

An 18.4-Gb/s/pin Simultaneous Bidirectional Transceiver for Post HBM4 Using Four-Phase Hybrid Timing Alignment and Dual Equalization 150 150
Author(s): Minchang Kim, Hankyu Chi, Sooncheol Kwon, Icsu Oh, Seulgi Kim, Heewoong Song, Daeho Yun, Jaehong Jeong, Daejoon Kim, Kichul Hong, Jeonghyun Park, Woo-Seok Choi, Hae-Kang Jung, Hoyoung Son, Inchul Jeong, Hyungsoo Kim, Jonghwan Kim

Abstract:

This letter presents a simultaneous bidirectional (SBD) transceiver for post HBM4. It is difficult to increase the data rate due to poor channel characteristics of the silicon interposer and the limited physical area of the IO in high-bandwidth memory (HBM) interface. SBD signaling is attractive because it doubles the per-pin …

Published in: IEEE Solid-State Circuits Letters
Page(s): 182 – 185
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3696268
Publisher: IEEE

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