IEEE Solid-State Circuits Letters

  • No Comments

A Reconfigurable Multimode Readout IC for Nonconductive and Capacitive Sensing With 33.9-dB SNR on 6.5-in AMOLED Panels

A Reconfigurable Multimode Readout IC for Nonconductive and Capacitive Sensing With 33.9-dB SNR on 6.5-in AMOLED Panels 150 150
Author(s): Sang Weun Kim, Jun Seong Kim, Dabin Yun, Seunghoon Ko

Abstract:

This letter presents a multimode readout IC for 6.5-in 34Tx/16Rx on-cell touch AMOLED (OCTA) panels, detecting both conductive and nonconductive objects (NCos) without panel modifications. To enable this dual detection, a reconfigurable analog front-end (AFE) is proposed, functioning as either a capacitance-to-voltage converter or a triboelectric charge sampler. In …

Published in: IEEE Solid-State Circuits Letters
Page(s): 129 – 132
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3680164
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A High-Efficiency Magnetoelectric Power Link With a Load-Adaptive CMOS Rectifier for Miniaturized Implants

A High-Efficiency Magnetoelectric Power Link With a Load-Adaptive CMOS Rectifier for Miniaturized Implants 150 150
Author(s): Yasemin Engür, Mingxiang Gao, Niels Kuster, Mahsa Shoaran

Abstract:

Miniaturized biomedical implants are currently constrained by limited wireless power transfer (WPT) efficiency under load variation and spatial misalignment. This work presents a custom magnetoelectric (ME) power link incorporating a load-adaptive CMOS rectifier to address these challenges. By employing a current sensing control loop for dynamic switch sizing and delay …

Published in: IEEE Solid-State Circuits Letters
Page(s): 125 – 128
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3679620
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology 150 150
Author(s): Mu Wu, Yihang Cheng, Xingli Cui, Sining Pan, Huaqiang Wu

Abstract:

This letter presents an energy-efficient RC discharge-based sensor readout circuit for sub-kilo-ohm resistance measurements. An SAR logic is implemented to adjust the DAC capacitor array to equalize the RC time constants of the resistance-sensing and DAC branches, thereby eliminating the high static current required to bias the small sensing resistor. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 109 – 112
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3677301
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 27.5–28.5 mJ/Frame 3-D Gaussian Rendering Processor With Spherical Beta Illumination and Mixed-Precision Computation Path

A 27.5–28.5 mJ/Frame 3-D Gaussian Rendering Processor With Spherical Beta Illumination and Mixed-Precision Computation Path 150 150
Author(s): Cheng Nian, Xiaorui Mo, Jiaqi Zhang, Fasih Ud Din Farrukh, Jiaying Peng, Fei Chen, Chun Zhang

Abstract:

This letter presents a 3-D Gaussian rendering processor that integrates a spherical beta (SB) illumination module with a mixed-precision rendering engine to enable energy-efficient novel-view synthesis on edge devices. SB replaces spherical harmonics (SH) with a hardware-efficient kernel implemented using a pipelined fixed-point piecewise linear (PWL) power unit. The pipeline …

Published in: IEEE Solid-State Circuits Letters
Page(s): 113 – 116
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3676726
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Logic-Compatible 2-Transistor Embedded Bipolar RRAM MACRO: A 28-nm Multiple-Time Programmable (MTP) Memory Without Extra Masks

A Logic-Compatible 2-Transistor Embedded Bipolar RRAM MACRO: A 28-nm Multiple-Time Programmable (MTP) Memory Without Extra Masks 150 150
Author(s): Yi Xiang Huang, Y. S. Lin, P. S. Huang, E. Ray Hsieh

Abstract:

This letter presents a 2-transistor (2T) bipolar embedded resistive RAM (eRRAM) MACRO fabricated in a 28-nm high-k metal gate (HKMG) process for multitime programmable (MTP) applications. To overcome the scaling bottlenecks of traditional embedded Flash, this work utilizes an extra-mask-free, pure front-end-of-line (FEOL) integration, offering a robust solution for automotive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 117 – 120
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3675063
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Birch: A Real-Time Multi-Domain Multi-Task Extended Reality Perception Accelerator

Birch: A Real-Time Multi-Domain Multi-Task Extended Reality Perception Accelerator 150 150
Author(s): Kathleen Feng, Kai Bartolone, Kartik Prabhu, Brianna McColm, Xingyu Ni, Siddhant Gupta, Priyanka Raina

Abstract:

Birch is a system-on-chip (SoC) that efficiently and accurately accelerates the multi-task multi-domain extended reality (XR) perception pipeline, with workloads such as visual inertial odometry (VIO), eye gaze tracking, and scene understanding. Birch features vision modules with cascaded line buffers, in-step feature sorting, and double-buffered optical flow to extract and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 121 – 124
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3673168
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 7-Level 18-Wire-State Trio-Signaling Transmitter for MIPI C-PHY 3.0 Interfaces

A 7-Level 18-Wire-State Trio-Signaling Transmitter for MIPI C-PHY 3.0 Interfaces 150 150
Author(s): Junyeong Lee, Myeongjin Oh, Kiwoon Kim, Jung-Hoon Chun

Abstract:

This letter presents a MIPI C-PHY v3.0 TX, which adopts trio-signaling using three wires per lane. Each line supports seven-level signaling, enabling 18 wire states to map 32-bit data into nine symbols, achieving 3.56 bits/symbol efficiency. Balanced coding maintains constant driver current, enhancing SSO noise immunity, and embedded clocking is achieved …

Published in: IEEE Solid-State Circuits Letters
Page(s): 101 – 104
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3672642
Publisher: IEEE

View on IEEE Xplore

  • No Comments

EMO-CIM: An Input/Stationary-Data Similarity-Aware Computing-In-Memory Design for Variable Vector-Wise Computation in Edge Multioperator AI Acceleration

EMO-CIM: An Input/Stationary-Data Similarity-Aware Computing-In-Memory Design for Variable Vector-Wise Computation in Edge Multioperator AI Acceleration 150 150
Author(s): Bo Wang, Yuchen Tang, Feiran Liu, Xiaoxue Zhong, Yuchen Ma, Xin Si, Jun Yang

Abstract:

We propose an edge multioperator computing-in-memory (EMO-CIM) design that supports variable vector-wise multiply-and-accumulate (MAC) in CNN, Depthwise (DW)-Convolution, and Attention operators. It features: 1) a single EMO-CIM bank (ECB) excels in variable vector-wise MAC (V-MAC) for multioperators; 2) merging local input-shared compute units (LISCUs) with a decode-unit and adder-tree (DUAT) facilitates …

Published in: IEEE Solid-State Circuits Letters
Page(s): 97 – 100
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668853
Publisher: IEEE

View on IEEE Xplore

  • No Comments

1–1.7-GHz Single-Voltage-Controlled Tunable MMIC BPF With Over 45-dB Rejection to 30 GHz Using Tapped Inductor Technique

1–1.7-GHz Single-Voltage-Controlled Tunable MMIC BPF With Over 45-dB Rejection to 30 GHz Using Tapped Inductor Technique 150 150
Author(s): Di Lu, Menghan Sun, Baoqi Zhu, Xin Jiang, Ming Yu

Abstract:

This article presents a novel fourth-order single-voltage-controlled (SVC) tunable monolithic microwave integrated circuit (MMIC) bandpass filter (BPF) for tunable filter bank applications. Utilizing the tapped inductor technique (TIT), the proposed filter achieves compact magnetic coupling with reduced loss, avoiding the use of bulky inductor- or transformer-based coupling structures. The filter …

Published in: IEEE Solid-State Circuits Letters
Page(s): 105 – 108
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668386
Publisher: IEEE

View on IEEE Xplore

Search this website