IEEE Solid-State Circuits Letters

  • No Comments

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology 150 150
Author(s): Mu Wu, Yihang Cheng, Xingli Cui, Sining Pan, Huaqiang Wu

Abstract:

This letter presents an energy-efficient RC discharge-based sensor readout circuit for sub-kilo-ohm resistance measurements. An SAR logic is implemented to adjust the DAC capacitor array to equalize the RC time constants of the resistance-sensing and DAC branches, thereby eliminating the high static current required to bias the small sensing resistor. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 109 – 112
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3677301
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 27.5–28.5 mJ/Frame 3-D Gaussian Rendering Processor With Spherical Beta Illumination and Mixed-Precision Computation Path

A 27.5–28.5 mJ/Frame 3-D Gaussian Rendering Processor With Spherical Beta Illumination and Mixed-Precision Computation Path 150 150
Author(s): Cheng Nian, Xiaorui Mo, Jiaqi Zhang, Fasih Ud Din Farrukh, Jiaying Peng, Fei Chen, Chun Zhang

Abstract:

This letter presents a 3-D Gaussian rendering processor that integrates a spherical beta (SB) illumination module with a mixed-precision rendering engine to enable energy-efficient novel-view synthesis on edge devices. SB replaces spherical harmonics (SH) with a hardware-efficient kernel implemented using a pipelined fixed-point piecewise linear (PWL) power unit. The pipeline …

Published in: IEEE Solid-State Circuits Letters
Page(s): 113 – 116
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3676726
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Logic-Compatible 2-Transistor Embedded Bipolar RRAM MACRO: A 28-nm Multiple-Time Programmable (MTP) Memory Without Extra Masks

A Logic-Compatible 2-Transistor Embedded Bipolar RRAM MACRO: A 28-nm Multiple-Time Programmable (MTP) Memory Without Extra Masks 150 150
Author(s): Yi Xiang Huang, Y. S. Lin, P. S. Huang, E. Ray Hsieh

Abstract:

This letter presents a 2-transistor (2T) bipolar embedded resistive RAM (eRRAM) MACRO fabricated in a 28-nm high-k metal gate (HKMG) process for multitime programmable (MTP) applications. To overcome the scaling bottlenecks of traditional embedded Flash, this work utilizes an extra-mask-free, pure front-end-of-line (FEOL) integration, offering a robust solution for automotive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 117 – 120
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3675063
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Birch: A Real-Time Multi-Domain Multi-Task Extended Reality Perception Accelerator

Birch: A Real-Time Multi-Domain Multi-Task Extended Reality Perception Accelerator 150 150
Author(s): Kathleen Feng, Kai Bartolone, Kartik Prabhu, Brianna McColm, Xingyu Ni, Siddhant Gupta, Priyanka Raina

Abstract:

Birch is a system-on-chip (SoC) that efficiently and accurately accelerates the multi-task multi-domain extended reality (XR) perception pipeline, with workloads such as visual inertial odometry (VIO), eye gaze tracking, and scene understanding. Birch features vision modules with cascaded line buffers, in-step feature sorting, and double-buffered optical flow to extract and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 121 – 124
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3673168
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 7-Level 18-Wire-State Trio-Signaling Transmitter for MIPI C-PHY 3.0 Interfaces

A 7-Level 18-Wire-State Trio-Signaling Transmitter for MIPI C-PHY 3.0 Interfaces 150 150
Author(s): Junyeong Lee, Myeongjin Oh, Kiwoon Kim, Jung-Hoon Chun

Abstract:

This letter presents a MIPI C-PHY v3.0 TX, which adopts trio-signaling using three wires per lane. Each line supports seven-level signaling, enabling 18 wire states to map 32-bit data into nine symbols, achieving 3.56 bits/symbol efficiency. Balanced coding maintains constant driver current, enhancing SSO noise immunity, and embedded clocking is achieved …

Published in: IEEE Solid-State Circuits Letters
Page(s): 101 – 104
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3672642
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Reconfigurable Multi-Mode Readout IC for Non-Conductive and Capacitive Sensing With 33.9-dB SNR on 6.5-inch AMOLED Panels

A Reconfigurable Multi-Mode Readout IC for Non-Conductive and Capacitive Sensing With 33.9-dB SNR on 6.5-inch AMOLED Panels 150 150
Author(s): Sang Weun Kim, Jun Seong Kim, Dabin Yun, Seunghoon Ko

Abstract:

This paper presents a multi-mode readout IC for 6.5-inch 34Tx/16Rx On-Cell Touch AMOLED (OCTA) panels, detecting both conductive and non-conductive objects without panel modifications. To enable this dual detection, a reconfigurable AFE is proposed, functioning as either a capacitance-to-voltage converter or a triboelectric charge sampler. In display-off mode, the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3680164
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A High-Efficiency Magnetoelectric Power Link With a Load-Adaptive CMOS Rectifier for Miniaturized Implants

A High-Efficiency Magnetoelectric Power Link With a Load-Adaptive CMOS Rectifier for Miniaturized Implants 150 150
Author(s): Yasemin Engür, Mingxiang Gao, Niels Kuster, Mahsa Shoaran

Abstract:

Miniaturized biomedical implants are currently constrained by limited wireless power transfer (WPT) efficiency under load variation and spatial misalignment. This work presents a custom magnetoelectric (ME) power link incorporating a load-adaptive CMOS rectifier to address these challenges. By employing a current sensing control loop for dynamic switch sizing and delay …

Published in: IEEE Solid-State Circuits Letters
Page(s): 125 – 128
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3679620
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Multi-band Ultra-low-power Transceiver with Two-step Wake-up Reception

A Multi-band Ultra-low-power Transceiver with Two-step Wake-up Reception 150 150
Author(s): Thinh Tran-Dinh, Hafiz Usman Mahmood, Jinglong Xu, Keun-Mok Kim, Kyung-Sik Choi, Jaeheon Lee, Jinho Ko, Sang-Gug Lee, Jusung Kim

Abstract:

This paper presents a multi-band fully integrated ultra-low-power (ULP) transceiver with a two-step wake-up receiver (WuRX) and switched-capacitor (SC) based high-efficiency transmitter. Operating from 200 MHz to 1 GHz, the transceiver covers most IoT applications on a single chip. By employing a novel two-step wake-up scheme with a rotating correlator, the proposed …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3681917
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier

A 0.19-PEF Bandwidth/Power Scalable Dynamic Amplifier 150 150
Author(s): Yihang Cheng, Yihan Zhang, Huaqiang Wu, Sining Pan

Abstract:

This letter presents an energy-efficient dynamic amplifier. It utilizes source-coupled input boosting and time-domain differential sampling techniques to boost the effective input signal by $4\times $ compared to its floating inverter amplifier (FIA) prototype without noise or power penalties. With discharge-based dynamic biasing, the bandwidth (BW) and power of the amplifier …

Published in: IEEE Solid-State Circuits Letters
Page(s): 93 – 96
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3668876
Publisher: IEEE

View on IEEE Xplore

Search this website