Voltage

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A Low-Reference-Spur Injection-Locked Clock Multiplier Using Sub-Sampling Frequency Tracking Loop and Injection Pulse Timing Calibrator

A Low-Reference-Spur Injection-Locked Clock Multiplier Using Sub-Sampling Frequency Tracking Loop and Injection Pulse Timing Calibrator 150 150
Author(s): Hyeonjun Nam, Hyogyoung An, Changmin An, Sungjin Kim, Heein Yoon

Abstract:

This article presents an injection-locked clock multiplier (ILCM) achieving the low-reference spur (spur ${}_{\mathrm {REF}}$ ) with minimal overhead of a calibrator. To remove the dominant sources of frequency error, which are frequency drift ( $f_{\mathrm {DF}}$ ), phase offset ( $\varPhi _{\mathrm {OS}}$ ), and injection-induced phase error ( $\varPhi _{\mathrm {INJ}}$ ), the ILCM …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3650135
Publisher: IEEE

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A Folded-Differential Switched-Capacitor SRAM CIM Macro With Scalable MAC Sizes for TinyML Inference

A Folded-Differential Switched-Capacitor SRAM CIM Macro With Scalable MAC Sizes for TinyML Inference 150 150
Author(s): Zhonghao Chen, Ling-An Cheong, Tianyi Yu, Yiming Chen, Guodong Yin, Teng Yi, Yongpan Liu, Huazhong Yang, Xueqing Li

Abstract:

This letter presents a switched-capacitor SRAM compute-in-memory macro optimized for TinyML inference. Key features include: 1) an area-efficient folded-differential multiply-and-accumulate (FD-MAC) scheme to double the signal margin; 2) a closed-loop floating-inverter amplifier (FIA)-based charge accumulation technique for signal-to-noise ratio enhancement and multiply-and-accumulate (MAC) voltage integration; and 3) a sparsity-aware multistep MAC method …

Published in: IEEE Solid-State Circuits Letters
Page(s): 73 – 76
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3662477
Publisher: IEEE

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A 77-fJ/bit 8-Gbps Adaptive-Voltage-Compatible Self-Timed Die-to-Die Link for 2.5-D and 3-D Interconnect in 3 nm

A 77-fJ/bit 8-Gbps Adaptive-Voltage-Compatible Self-Timed Die-to-Die Link for 2.5-D and 3-D Interconnect in 3 nm 150 150
Author(s): Brian Zimmer, Stephen G. Tell, C. Thomas Gray

Abstract:

This work presents a self-timed die-to-die link that serializes four data bits per pin for 2.5-D, or 3-D interconnects using a standard adaptive digital clock and voltage supply. The link achieves 8 Gbps of per-pin bandwidth with a latency of one cycle, energy efficiency of 77 fJ/b, and bandwidth density of 44…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 10
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3658215
Publisher: IEEE

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A 54- $\\mu$ W Design-Agnostic Clock, Voltage, and EM-Pulse Fault-Injection Attack Detection Using Time-to-Voltage Conversion

A 54- $\\mu$ W Design-Agnostic Clock, Voltage, and EM-Pulse Fault-Injection Attack Detection Using Time-to-Voltage Conversion 150 150
Author(s): Yudhajit Ray, Archisman Ghosh, Sarthak Antal, Shreyas Sen

Abstract:

This article presents a state-of-the-art design-agnostic clock, voltage, and electromagnetic pulse (EMP)-based fault-injection attack (FIA) detector. The efficient conversion of time-to-voltage information by integrating amplifiers transforms the time anomaly into the voltage domain, enabling its detection at a lower power consumption. The clock-glitch detector design consumes only $53~\mu $ W …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3655593
Publisher: IEEE

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A Fully-Integrated Wireless Ingestible CMOS Drug-Delivery Chip With Electrochemical Energy Harvesting and pH-Adaptive MPPT for Personalized Therapeutics

A Fully-Integrated Wireless Ingestible CMOS Drug-Delivery Chip With Electrochemical Energy Harvesting and pH-Adaptive MPPT for Personalized Therapeutics 150 150
Author(s): So-Yoon Yang, Deniz Umut Yildirim, Saransh Sharma, Donghyeon Han, Rishabh Mittal, Husna T. Ellis, Jaehong Jung, Eunseok Lee, Yubin Cai, Giovanni Traverso, Anantha P. Chandrakasan

Abstract:

The rapid growth of personalized medicine has driven increased demand for battery-free, energy-efficient ingestible electronics for on-demand gastrointestinal (GI) drug delivery. This article presents the first fully-integrated, battery-free ingestible CMOS platform that harvests energy from a galvanic cell (GC) through a reconfigurable switched-capacitor converter, with pH-adaptive maximum power point tracking (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1082 – 1095
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3647275
Publisher: IEEE

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A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue

A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue 150 150
Author(s): Alin Thomas Tharakan, Cong Huang, Yiheng Fu, Horacio Londoño Ramírez, Stéphanie P. Lacour, Mahsa Shoaran

Abstract:

This letter presents an 8-channel current-mode stimulator achieving a ±10.2 V voltage compliance in a standard CMOS process, supporting up to 4.5 mA stimulation current per channel. The proposed dynamic charge pump (DCP), which adaptively sizes its switches based on the stimulation current, helps achieve ~15% higher power efficiency at low currents compared …

Published in: IEEE Solid-State Circuits Letters
Page(s): 49 – 52
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3653014
Publisher: IEEE

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A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology

A Standalone-in-Memory Voltage Crossover-Based Assist Switching Circuit for Reliable and Efficient Process Tracking Memory Vmin Improvement in Intel 18A-RibbonFET Technology 150 150
Author(s): Saroj Satapathy, Amlan Ghosh, John Riley, Jalal Quadri, Jaydeep Kulkarni, Feroze Merchant

Abstract:

Advanced CMOS memory requires voltage biasing assist techniques to achieve low operating voltages (Vmin), which must be deactivated at higher voltages for high electric field reliability. Centralized power management unit (PMU) control signals face timing synchronization and process tracking challenges when distributed across cores to activate assist circuits in various …

Published in: IEEE Solid-State Circuits Letters
Page(s): 37 – 40
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3652110
Publisher: IEEE

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Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles

Actiniaria: Distributed Dynamic-IR-Drop-Aware Timing Monitor for AVFS With Lightweight Tentacles 150 150
Author(s): Junyi Qian, Lishuo Deng, Cai Li, Yizhi Ding, Weiwei Shan

Abstract:

Advances in integrated circuit (IC) technology have amplified the effects of process, voltage, and temperature (PVT) variations, particularly dynamic IR drop, which severely affects timing. Post-silicon IR drop monitoring circuits are lacking, forcing designers to reserve substantial static guard bands for worst-case scenarios, compromising energy efficiency. Inspired by biomimetics, this …

Published in: IEEE Solid-State Circuits Letters
Page(s): 25 – 28
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3645701
Publisher: IEEE

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A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC

A 28-nm FeFET Compute-in-Memory Macro With 64×64 Array Size and On-Chip 4-Bit Flash ADC 150 150
Author(s): Vaidehi Garg, Jianwei Jia, Omkar Phadke, Shimeng Yu

Abstract:

Compute-in-memory (CIM) using emerging nonvolatile memory devices is a promising candidate for energy-efficient deep neural network (DNN) inference at the edge. Ferroelectric field-effect transistors (FeFETs) have recently gained attention as nonvolatile, CMOS-compatible devices with a higher on/off ratio and lower read and write energy compared to resistive random-access memory (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 13 – 16
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3640522
Publisher: IEEE

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