Voltage

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A CMOS LNA With an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications

A CMOS LNA With an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications 150 150
Author(s): Yunfan Gao, Minghan Liu, Mengting Yan, Cristian Cassella, Miriam Leeser, Marvin Onabajo

Abstract:

This letter presents a 2.8-GHz low-power CMOS low-noise amplifier (LNA) with an embedded self-mixing power detector (PD) for low-overhead RF power monitoring. The detector reuses two existing LNA node voltages as the signal and local oscillator (LO) inputs for direct downconversion mixing, which avoids a dedicated LO generator, coupler, or …

Published in: IEEE Solid-State Circuits Letters
Page(s): 258 – 261
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3725828
Publisher: IEEE

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A Delay-Compensated RC Oscillator With Constant Ramp Peak-Voltage Achieving 23 ppm/°C Temperature Coefficient from -40 to 100 °C

A Delay-Compensated RC Oscillator With Constant Ramp Peak-Voltage Achieving 23 ppm/°C Temperature Coefficient from -40 to 100 °C 150 150
Author(s): Wenbo Zhang, Fantao Wang, Junyi Liu, Yanzhao Ma

Abstract:

This letter presents a delay-compensated RC relaxation oscillator for enhanced frequency stability. The proposed architecture employs a peak-sampling circuit to detect the charging-capacitor peak voltage. A feedback loop composed of an error amplifier and compensation resistors adaptively raises the capacitor DC baseline to compensate for comparator-delay-induced frequency error, while phase-alternating …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3738818
Publisher: IEEE

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Temperature-Dependent Soft-Error Analysis from 300K to 77K in Nanosheet and CFET

Temperature-Dependent Soft-Error Analysis from 300K to 77K in Nanosheet and CFET 150 150
Author(s): Sufia Shahin, Hafeez Raza, Avinash Lahgere, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

We investigate the impact of cryogenic temperatures on the Single Event Upset (SEU) reliability of the Gate-All-Around (GAA) Nanosheet FET (NSFET) and Complementary FET (CFET) devices. At the device level, we assess heavy-ion radiation (HIR)-induced transients and carrier profiles and compare CFET and NSFET at temperatures from 400K to 77 …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3740550
Publisher: IEEE

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A Threshold-Voltage Self-Compensated Dual-Gate IGZO TFT Cell for Robust In-Sensor Computing

A Threshold-Voltage Self-Compensated Dual-Gate IGZO TFT Cell for Robust In-Sensor Computing 150 150
Author(s): Zhi Li, Zikang Mei, Wei Tang

Abstract:

In-sensor computing (ISC) based on amorphous metal-oxide thin-film transistors (TFTs) promises compact, high-density vision chips, yet large-scale integration is vulnerable to process-induced threshold-voltage ( $V_{th}$ ) variations that critically degrade computational robustness and accuracy. This work proposes a novel 3T1C (3-Transistor, 1-Capacitor) ISC cell circuit based on photodiode (PD)-gated …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 214 – 222
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3736074
Publisher: IEEE

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A 0.73 A/mm3 Switched-Capacitor-Stack-Inductor Volumetric Integrated Voltage Regulator With Auxiliary-Assisted Gain Boosting for High-Power-Density PoL Applications

A 0.73 A/mm3 Switched-Capacitor-Stack-Inductor Volumetric Integrated Voltage Regulator With Auxiliary-Assisted Gain Boosting for High-Power-Density PoL Applications 150 150
Author(s): Xuliang Wang, Renwei Chen, Haoyu Wang, Yang Liu, Wing-Hung Ki, Yan Wang, Xiaosen Liu

Abstract:

This article presents a volumetric integrated voltage regulator (IVR) based on a switched-capacitor-stack-inductor (SCSL) architecture that employs a holistic topology-control-package codesign to overcome the hardware and efficiency bottlenecks of conventional asymmetric multiinductor designs. Based on a discrete-time state-space model, a rigorous root-locus analysis reveals that a rudimentary single voltage-mode control …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 5825 – 5837
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3713507
Publisher: IEEE

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An Ultralow Jitter Fractional-N PLL Enabled by an Intrinsically Linear Variable-Slope SPD for QE Cancellation

An Ultralow Jitter Fractional-N PLL Enabled by an Intrinsically Linear Variable-Slope SPD for QE Cancellation 150 150
Author(s): Yanchao Liu, Kaihang Wang, Yang Li, Xiaohua Yu, Ronghua Ni

Abstract:

This article presents a high-performance 13.2-GHz fractional-N sampling phase-locked loop (PLL). To overcome the nonlinearity bottlenecks inherent in edge-restoring buffers used in conventional digital-to-time converters (DTCs), an intrinsically linear variable-slope sampling phase detector (VS-SPD) is proposed. By seamlessly merging an RC delay network with a sampling phase detector (SPD), the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3735859
Publisher: IEEE

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A 14-bit 1-GS/s Two-Stage Pipelined-SAR ADC With 4-bit/Cycle Sub-Quantizer and Reconfigurable Miller-Compensated Three-Stage Amplifier

A 14-bit 1-GS/s Two-Stage Pipelined-SAR ADC With 4-bit/Cycle Sub-Quantizer and Reconfigurable Miller-Compensated Three-Stage Amplifier 150 150
Author(s): Guo Wei, Rui Zhang, Peng Wang, Fule Li, Hanjun Jiang, Zhihua Wang

Abstract:

This article presents a 14-bit 1-GS/s pipelined successive-approximation register (SAR) analog-to-digital converter (ADC) in a 28 nm CMOS process, targeting the optimization of conversion speed and latency. The implemented ADC adopts a two-stage architecture that integrates a residue amplifier (RA) assisted 4-bit/cycle sub-quantizer to tackle the accuracy bottleneck of …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3738437
Publisher: IEEE

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An Intelligent Vision SoC With Fully Analog Sensing-to-Inference Pipeline and Linearity-Recovery RRAM Compute-in-Memory

An Intelligent Vision SoC With Fully Analog Sensing-to-Inference Pipeline and Linearity-Recovery RRAM Compute-in-Memory 150 150
Author(s): Zhengke Yang, Xiao Liu, Haofeng Yu, Zhen Kong, Humiao Li, Liang Ran, Zhichao Lu, Xinhe Feng, Liang Zhao, Yida Li, Jiamin Li, Feichi Zhou, Longyang Lin

Abstract:

Edge vision systems that integrate image sensing and neural-network inference on a single chip are constrained by inter-layer analog-to-digital converters (ADCs) and on-chip weight storage density, which together limit system efficiency and network scale. This article presents a fully analog vision system-on-chip (SoC) with 2-Mbit multi-level-cell (MLC) resistive random access …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3737258
Publisher: IEEE

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A Low-Quiescent-Current, Low-Ripple Hybrid Converter With Efficient Energy Recycling for Low-Duty-Cycle SoCs

A Low-Quiescent-Current, Low-Ripple Hybrid Converter With Efficient Energy Recycling for Low-Duty-Cycle SoCs 150 150
Author(s): Jianxin Yang, Cheng Huang, Rui P. Martins, Xin Ming, Bo Zhang, Mo Huang

Abstract:

This article presents a modified hybrid Ladder converter for efficient energy recycling in low-duty-cycle systems-on-chip (SoCs) applications. Unlike the conventional schemes that recycle output-capacitor energy back to the battery, the proposed hybrid converter recycles energy into its own capacitors, eliminating battery-recharge losses and improving recycle/recharge efficiency. The design methodology …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3738472
Publisher: IEEE

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