Transistors

EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage

EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage 150 150

Abstract:

Designing compact and energy-efficient resistive RAM (RRAM) macros is challenging due to: 1) large read/write circuits that decrease storage density; 2) low-conductance cells that increase read latency; and 3) the pronounced effects of routing parasitics on high-conductance cell read energy. Multiple-bits-per-cell RRAM can boost storage density but has further challenges resulting from …

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GaN Power Switch for Power Distribution Protection

GaN Power Switch for Power Distribution Protection 150 150

Abstract:

The electrical power system (EPS) of satellites requires protection devices to isolate failures in short-circuit conditions that can occur in payloads due to various sources, such as debris, mishandling, or radiation. Latching current limiter (LCL) implemented with a pMOS power transistor is typically used for this task. Radiation can also …

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A 23.9-μW 13.6-Bit Period Modulation-Based Capacitance-to-Digital Converter With Dynamic Current Mirror Front-End

A 23.9-μW 13.6-Bit Period Modulation-Based Capacitance-to-Digital Converter With Dynamic Current Mirror Front-End 150 150

Abstract:

This letter proposes a low-power high-precision capacitance-to-digital converter (CDC) utilizing a dynamic current mirror (DCM) to transform a sensor input capacitance $(C_{\mathrm{ IN}})$ into an output current. The resulting current is directly proportional to the ratio of $C_{\mathrm{ IN}}$ to an internal reference capacitor $(C_{\mathrm {REF}})$ and …

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A 300- $\mu$ W 2.4-GHz PVT-Insensitive Subthreshold Reference-Based LNA

A 300- $\mu$ W 2.4-GHz PVT-Insensitive Subthreshold Reference-Based LNA 150 150

Abstract:

This article introduces a novel ultra-low-power reference-based low-noise amplifier (LNA) designed to reduce performance variations due to process, voltage, and temperature (PVT) when operating in the subthreshold region. The LNA is embedded within a reference circuit that directly controls the performance of the LNA over PVT variations. By combining the …

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An Ultrasound Receiver With Bandwidth-Enhanced Current Conveyor and Element-Level Ultrasound Transmitter for Ultrasound Imaging Systems

An Ultrasound Receiver With Bandwidth-Enhanced Current Conveyor and Element-Level Ultrasound Transmitter for Ultrasound Imaging Systems 150 150

Abstract:

In this letter, we present an ultrasound (US) imaging system with a low-noise US receiver (RX) and an element-level US transmitter (TX) for a capacitive micromachined ultrasonic transducer (CMUT). The proposed US RX isolates the input parasitic capacitance $(C_{P})$ from the front-end transimpedance stage by using a bandwidth-enhanced current …

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OCCAM: An Error Oblivious CAM

OCCAM: An Error Oblivious CAM 150 150

Abstract:

Content addressable memories (CAMs) are widely used in many applications in general purpose computer microarchitecture, networking and domain-specific hardware accelerators. In addition to storing and reading data, CAMs enable simultaneous compare of query datawords with the entire memory content. Similar to SRAM and DRAM, CAMs are prone to errors and …

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Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors

Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors 150 150

Abstract:

We systematically fabricate devices and analyze data for vertical InAs/(In)GaAsSb nanowire tunnel field-effect transistors (TFETs), to study the influence of source dopant position and level on their device performance. The results show that delaying the introduction of dopants further in the GaAsSb source segments improved the transistor metrics (…

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Gordon Moore’s Journey: “Moore’s law” dissected

Gordon Moore’s Journey: “Moore’s law” dissected 150 150

Abstract:

Gordon Moore may be best known for Moore’s law, which states that “the number of transistors on a microchip doubles every two years while the cost per transistor decreases.” While Moore’s law has been known since the 1960s, it is not well known what led Moore to make …

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