transimpedance amplifier (TIA)

  • No Comments

A 256-Channel Solid-State Nanopore Readout Array With 193-pA TIAs and Event Detection at 1-MHz in 65-nm CMOS

A 256-Channel Solid-State Nanopore Readout Array With 193-pA TIAs and Event Detection at 1-MHz in 65-nm CMOS 150 150
Author(s): Sander Crols, Filip Tavernier, Carolina Mora Lopez, Marian Verhelst, Nick Van Helleputte

Abstract:

Solid-state nanopore single-molecule sensing aims to replace the commercially available biological nanopores. Array sizes have remained limited due to the area and power consumption of the transimpedance amplifiers (TIAs), thus preventing throughput and cost scaling. This article presents a 256-channel readout array for solid-state nanopore single-molecule sensing in 65 nm CMOS. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3721767
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Minimizing the Noise in Low-Current Sensing by MOSFET p-n Junction Diode Feedback

Minimizing the Noise in Low-Current Sensing by MOSFET p-n Junction Diode Feedback 150 150
Author(s): Ehsan Semsar Parapari, Marco Bennati, Michele Biondi, Marco Crescentini, Federico Thei

Abstract:

This letter proposes a transimpedance amplifier (TIA) architecture that minimizes noise for continuous-time (CT) low-current sensing. The approach leverages a MOSFET to realize a pure p-n junction diode as the TIA feedback element, such that MOS channel conduction is completely suppressed. Therefore, channel-induced noise contributions associated with conventional MOS-based feedback …

Published in: IEEE Solid-State Circuits Letters
Page(s): 162 – 165
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3692971
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI 150 150
Author(s): Jelle H. T. Bakker, Nimit Jain, Paul Klatser, Mark S. Oude Alink, Bram Nauta

Abstract:

We present a monolithically integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the deep Nwell (DNW)/P-type substrate (PSUB) $({\lt }5~ \mathrm {GHz})$ and the P-Well $(\mathrm {PW}) / \mathrm {DNW}({\gt }1~ \mathrm {GHz})$ junctions. The presented combination of bulk PD and 22 nm fully-depleted silicon-on-insulator (FDSOI) …

Published in: IEEE Solid-State Circuits Letters
Page(s): 313 – 316
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3615656
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, C. Patrick Yue

Abstract:

This letter presents a 0.32 pJ/bit 100-Gb/s PAM-4 CMOS transimpedance amplifier (TIA). Several techniques are proposed to alleviate TIA design tradeoffs while pushing energy efficiency to a limit. A multipeaking input network is designed to relieve the bandwidth (BW) degradation from parasitics of input interface and ESD diodes. An …

Published in: IEEE Solid-State Circuits Letters
Page(s): 273 – 276
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3603569
Publisher: IEEE

View on IEEE Xplore

Search this website