Thin film transistors

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A Threshold-Voltage Self-Compensated Dual-Gate IGZO TFT Cell for Robust In-Sensor Computing

A Threshold-Voltage Self-Compensated Dual-Gate IGZO TFT Cell for Robust In-Sensor Computing 150 150
Author(s): Zhi Li, Zikang Mei, Wei Tang

Abstract:

In-sensor computing (ISC) based on amorphous metal-oxide thin-film transistors (TFTs) promises compact, high-density vision chips, yet large-scale integration is vulnerable to process-induced threshold-voltage ( $V_{th}$ ) variations that critically degrade computational robustness and accuracy. This work proposes a novel 3T1C (3-Transistor, 1-Capacitor) ISC cell circuit based on photodiode (PD)-gated …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 214 – 222
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3736074
Publisher: IEEE

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A 6-bit Serializer With Integrated Manchester Encoder Using Flexible a-IGZO TFT Technology

A 6-bit Serializer With Integrated Manchester Encoder Using Flexible a-IGZO TFT Technology 150 150
Author(s): Suyash Shrivastava, Pydi Ganga Bahubalindruni

Abstract:

This article presents an experimental characterization of a novel 6-bit parallel-to-serial data converter integrated with a Manchester encoder. The system comprises an on-chip digital logic block that generates six mutually nonoverlapping control signals ( $\phi _{0-5}$ ) and three 120° phase-shifted clock signals to drive the switching transistors in the serializer and the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 194 – 197
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3707465
Publisher: IEEE

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Dual-Band Voltage-Controlled Oscillator for CB and HF RFID Bands in a Flexible IGZO Technology

Dual-Band Voltage-Controlled Oscillator for CB and HF RFID Bands in a Flexible IGZO Technology 150 150
Author(s): Lautaro N. Petrauskas, Bahman K. Boroujeni, Frank Ellinger

Abstract:

In this work, a cross-coupled voltage-controlled oscillator (VCO) for the high frequency RFID and citizen bands (CBs) is investigated, and implemented on a flexible Indium gallium zinc oxide thin film transistor (TFT) technology. To circumvent the challenges of integrating passive components in this frequency range and minimize the circuit’s …

Published in: IEEE Solid-State Circuits Letters
Page(s): 33 – 36
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3651909
Publisher: IEEE

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A High-Speed D-FF and a 11-Bit Up-Down Counter Using Unipolar Oxide TFTs on a Flexible Foil

A High-Speed D-FF and a 11-Bit Up-Down Counter Using Unipolar Oxide TFTs on a Flexible Foil 150 150
Author(s): Suyash Shrivastava, Pydi Ganga Bahubalindruni

Abstract:

This manuscript presents an experimental characterization of a novel high speed D flip-flop (D-FF). The circuit was fabricated on a $27\mu $ m thick flexible polyimide substrate using a nMOS only, single gate amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) technology. Reliable response of the D-FF was noticed from measurements up to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 373 – 376
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3636192
Publisher: IEEE

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An Area and Power Efficient Source Driver IC With Multi-Line Sensing Real-Time Pixel Compensation for OLED Displays

An Area and Power Efficient Source Driver IC With Multi-Line Sensing Real-Time Pixel Compensation for OLED Displays 150 150
Author(s): Jaewoong Ahn, Seung Hun Choi, Minseong Um, Jun Yeol An, Hyung-Min Lee

Abstract:

This article proposes a source driver integrated circuit (SD-IC) with a pixel compensator designed to minimize both silicon area and power consumption for organic light-emitting diode (OLED) displays. The proposed SD-IC is capable of driving ultrahigh-definition (UHD) active-matrix OLED (AMOLED) panels with a one-horizontal-time (1-H time) of $7.2~\mu $ s while …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3614134
Publisher: IEEE

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