Testing

A Low-Power MRAM-Based Nonvolatile Flip-Flop Architecture for Register and System Applications

A Low-Power MRAM-Based Nonvolatile Flip-Flop Architecture for Register and System Applications 150 150

Abstract:

This work presents a minimal nonvolatile flip-flop (NVFF) hybrid architecture and an NV static contention-free differential FF (nvSCDFF) cell that reduces the overhead associated with replicated NV circuitry in conventional in situ NVFFs while enabling low power. By using only one NVFF per column and compact SCDFF-based volatile flip-flops (FFs), …

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A Modular Ring-Oscillator Array Chip for Accurate Stress Testing of CMOS Aging Mechanisms

A Modular Ring-Oscillator Array Chip for Accurate Stress Testing of CMOS Aging Mechanisms 150 150

Abstract:

Ring-oscillator (RO) circuits have historically been used to characterize the performance of CMOS technologies, as they can easily expose both process variability and aging through a straightforward circuit structure. ROs are widely employed to study degradation mechanisms such as bias temperature instability (BTI) and hot carrier degradation (HCD), which progressively …

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Chameleon: A Multiplier-Free Temporal Convolutional Network Accelerator for End-to-End Few-Shot and Continual Learning from Sequential Data

Chameleon: A Multiplier-Free Temporal Convolutional Network Accelerator for End-to-End Few-Shot and Continual Learning from Sequential Data 150 150

Abstract:

On-device learning at the edge enables low-latency, private personalization with improved long-term robustness and reduced maintenance costs. Yet, achieving scalable, low-power (LP) end-to-end on-chip learning, especially from real-world sequential data with a limited number of examples, is an open challenge. Indeed, accelerators supporting error backpropagation optimize for learning performance at …

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Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions

Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions 150 150

Abstract:

This letter presents a tri-well implementation of MOS capacitors designed to tackle the challenge of high parasitic capacitance. By serially connecting the three parasitic well junction capacitors between the three wells (N-Well, deep P-Well, and deep N-Well) and substrate (PSUB), the parasitic capacitance can be significantly decreased. A higher bias …

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