A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI
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Abstract:
This letter presents a Ka-band mutual coupling resilient stacked-FET power amplifier (PA) in 45-nm CMOS silicon on insulator. Two sub-PAs with triple-stacked-FET to increase output-power (Pout) are combined through a quadrature hybrid coupler to keep robust and high performance in the scenario of mutual coupling among the phased-array antennas. A …